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105 V/cm, compare the breakdown voltages between the P-I-N structure and a P-N structure
(without the I region) with the doping levels shown above.
● Diffusion Equation ● 4.6 If interested, you can find more P-I-N diode examples at http://jas.eng.buffalo.edu/
Consider a piece of infinitely long semiconductor sample shown in Fig. 4–50.
Problem  [25 pts] [Exercise 4.11-Hu ] Consider an ideal, long base (length of the diode is
much larger than the diffusion length), silicon, abrupt p+n junction diode with uniform cross
section and constant doping on either side of the junction. The diode is made from a heavily
doped p-type material and 0.5Ωcm n-type materials in which the minority carrier lifetime is
τp=10-8 sec. Answer the following questions for the n side of the junctions only:
(a) Calculate the density of minority carriers as a function of x (distance from the junction) when
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This homework help was uploaded on 03/29/2014 for the course EE 130 taught by Professor Ee130 during the Spring '07 term at University of California, Berkeley.
- Spring '07