Lecture Notes_20-22_MOS_2014

At the oxide semiconductor interface it is es study

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Unformatted text preview: from thermally generated electrons 15 16 17 18 19 20 21 22 23 24 near the depletion edge. When these electrons move toward the oxide, they see an electric field and are accelerated toward the interface. They are blocked by the oxide, so they accumulate at the interface. Band diagram above Threshold. Note that the depletion region remains the same, xdT, but the inversion charge has increased above the threshold value. As expected, the higher the doping (impurity concentration, n or p type) is, the smaller the depletion width. Here Wm is the maximum depletion width (xdT). (c). The depletion width stops increasing with increasing positive gate bias VG because it has a square- root dependence on VG, whereas a small amount of band bending leads to a large increase in...
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This note was uploaded on 04/01/2014 for the course ECE 103 taught by Professor Wang during the Winter '08 term at UCSD.

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