Lecture Notes_20-22_MOS_2014

At the particular gate bias for the left figure the

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Unformatted text preview: eposition of the oxide). These are called surface- state charges (per unit area), denoted by Qss’. It turns out that on a (100) surface, the surface- state charges are one order of magnitude smaller than those on a (111) surface. Therefore, the industry standard is to use (100) surfaces. Now that we have two non- ideal factors: work function difference and surface- state charges, we need to find the flat- band voltage first. From the flat- band condition, we can then talk about accumulation, depletion, and inversion, as in the case of an ideal MOS capacitor. Consider only metal- semiconductor work function difference φms first. To reduce the depletion region toward flat band, the gate bias needs to be negative. When VFB = φms, which...
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