Lecture Notes_20-22_MOS_2014

Lecture Notes_20-22_MOS_2014

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Unformatted text preview: he charge per unit area on the metal balances the opposite charge per unit area of the surface states/traps, Qss’. This slide shows that the threshold voltage (at ns = p in the bulk) consists of three parts: metal- semiconductor work function difference, doping level of the semiconductor, and the space charge (depletion charge) in the semiconductor. Here we neglect the inversion layer charge because the depletion width is much larger than the inversion layer width. Remember the charge per unit area due to the depletion charge Q’SD(max) = eNaxdT, and the inversion charge per unit area = ensxs, where xs is the inversion width. Since the inversion charge is...
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This note was uploaded on 04/01/2014 for the course ECE 103 taught by Professor Wang during the Winter '08 term at UCSD.

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