Lecture Notes_20-22_MOS_2014

Note the depletion region at steady state it is also

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Unformatted text preview: m and thermally generated electrons near the depletion width are accumulated at the semiconductor- oxide interface. The figures are self- explanatory. The left- most figure tries to show that an MOS is like a parallel- plate capacitor. Note the depletion region at steady state. It is also called “induced space charge region”. At large positive gate bias induces electrons near the oxide- semiconductor interface. The depletion region reaches a maximum (discussed later), and free electrons accumulate at the interface. This situation is called “Inversion”. We start out with an ideal MOS diode by assuming the metal work function is equal to the semiconductor work function. The only charges under bias are those in the semiconductor and metal, that is, no charges from traps...
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This note was uploaded on 04/01/2014 for the course ECE 103 taught by Professor Wang during the Winter '08 term at UCSD.

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