A-MT-Ch03-Intrinsic-&-extrinsic-sem iconductors

O proba abilitythaton neelectronrecombines swithanyho

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: e eration rate = Gi Equilibrium re ecombinatio on rate = Ri Ri Gi Recombinatio on rate. o Proba ability that on ne electron recombines s with any ho ole per unit time Prob bability ∝ p p Chapter 3 – page 1 o Probability that n electrons recombine with a hole per unit time Probability ∝ n p o Recombination rate: R r n p r proportionality constant o Recombination in an intrinsic semiconductor Ri r ni pi r ni2 o Generation in an intrinsic semiconductor Gi Ri r ni pi ni2 Chapter 3 – page 2 Extrinsic semicondu ctors Doping = adding a foreig D gn element Doping by … D sion o Diffus o Implantation (ion implantatio on) o During g epitaxial growth n‐type se emiconducto ors Fi irst thought t experiment t: o Remo ove one Si atom in a Si cr rystal and re eplace it with h a phospho orus (P) atom m. o Si is group‐IV elem ment. P is gro oup‐V eleme ent Chemical bon nd model Band model f for donors ral (left‐hand d side) or ion nized (right‐hand side) The donor is either neutr Once the don O nor donates its electron, , the donor i s positively charged Io onization en nergy or acti ivation energy o Ed ≈ 5 5 – 50 meV o At T = 300 K: Ther rmal energy y =...
View Full Document

This note was uploaded on 04/03/2014 for the course ECSE 2210 taught by Professor Huang during the Fall '12 term at Rensselaer Polytechnic Institute.

Ask a homework question - tutors are online