A-MT-Ch01-Introduction-&-crystals

A-MT-Ch01-Introduction-&-crystals - E.F.Schubert...

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Chapter 1 – page 1 Microelectronics Technology E. F. Schubert © 2012, all rights reserved Rensselaer Polytechnic Institute Troy, New York Solid State Devices Examples are: o Field effect transistors o Bipolar transistors o LEDs o Lasers o Photodetectors o Solar cells
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Se T everal impo o Trans o Gener o Recom ransport of o Trans Diffus > 0 K, o Trans motio Trans rtant physic port of char ration of cha mbination of electrons port due to sion is the ra when these Synonyms motion; Br Diffusion performed Diffusion r Net diffusi Net diffusi port due to on of charged The direc particles a electric fie Negative e Cha port of carr al mechanis ge carriers ( arge carriers f charge carr o thermal e andom mov e particles ha s for Diffus rownian mo or therma d by Robert results in car ion occurs a ion occurs a o an electric d particles c tion of car and is direc eld electrons dri pter 1 – page 2 iers by diffu ms determin e.g. electron riers energy of ca vement of pa ave a therma ion: Therm tion al motion Brown Br rrier transpo long the con long the pos c field D aused by an rier drift de cted either ift against th usion and dr ne the beha ns) arriers D articles (e.g al energy gre al motion; was first rownian mo ort if there is ncentration sitive x direc rift . What i n electric fiel epends on along or a he direction ift vior of charg Diffusion . W . electrons) eater than z Random m identified otion s a concentr gradient ction s drift? Drif d. the charge against the of the electr ge carriers: hat is diffu at tempera ero. motion; Diff in experim ation gradie ft is the dire e polarity o direction o ric field sion? tures fusive ments ent ected f the f the
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O R a a In C C Ohm’s law: o V = Vo o R = Re o I = Cu ecall nd nd nsertion of E = Current I densi Current o e = ele o n = co o v = av o = co B oltage esistance rrent Eq. (2), (3), a time unit charge = J = ity ementary ch oncentration verage veloci onductivity Cha asic law of t nd (4) into E n e e e u Area number harge = 1.60 n of electron ity of electro pter 1 – page 3 transport: O I R V A l R A J I l V E Eq. (1) yields E J time unit el of umber time unit electron of e J 2 × 10 –19 C s per cm 3 ons Ohm’s law A l 1 ectrons v n e ns v n (1) (2) (3) (4) (5) (6)
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Derivation of o
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A-MT-Ch01-Introduction-&-crystals - E.F.Schubert...

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