Gpnjunctiionled heterostru ucturegrowthegalas sgaas o

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Unformatted text preview: technique is the float z zone techniq que (not disc cussed here) ) pitaxial growth of thin l layers of single crystals Ep xy = growth h of a crystalline layer on n top of a cry ystalline sub bstrate o Epitax o Epitax xy = thin‐film growth o Epitax xy is a slow p process (1 µm m / hr) o Epitax xy is an “atom‐by‐atom” ” process o Epitax xy requires T T >> 300 K o Applic cations: Chapter 1 – page 9 pn‐junctio on growth (e.g. pn‐junctiion LED) Heterostru ucture growth (e.g. AlAs s / GaAs) o Vapor r‐Phase Epita axy (VPE) is a common e epitaxial growth techniq que Why is it c called Vapor‐ ‐Phase Epita axy? Chemical r reaction for the growth of … Si: + 2 H2 SiH4 Si + GaAs: (CH3)3Ga + A 3 Ga AsH aAs + 3 CH4 Growth ap pparatus: See illustration n o Other r growth technique: Mol lecular beam m Epitaxy (M MBE, not disc cussed here) ) Chap pter 1 – page 10 Chapter 1 – page 11 p The four types of crystals Recall some chemistry … o Atoms have electron shells o A completely filled shell has 2, 8, or 18 electrons o Noble gases have 2 (He), 10 (Ne), 18 (Ar), …, electrons o Noble gases are very stable and do not react with other atoms o Atoms have the tendency to assume a noble‐gas electron configuration There are 4 main classes of crystals: o Metallic crystals o Covalent crystals o Ionic crystals o Molecular crystals o Next, we will discu...
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This note was uploaded on 04/03/2014 for the course ECSE 2210 taught by Professor Huang during the Fall '12 term at Rensselaer Polytechnic Institute.

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