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Unformatted text preview: Name: ELECTRONICS I
December 10, 1996 I. Consider the circuit below in which the base voltage is obtained with a
voltage divider across a. 9 V supply (battery). Assume that the transistor has
a very high [3 and daimmto obtain V3 = 3 V. Design the
circuit for a 0.2 mA in the voltage divider. Now if the ,3 of the BJT is 100, analyze the circuit to detemxinethecollector current and the collector voltage.
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\kﬂ 1' . t II. The BJT in the circuit below has ,3 = 100 ( neglect the Early effect). 0 Find the dc collector current and the dc voltage at the collector. 0 Replace the transistor by its Tmodel and draw the smallsignal equiva
lent circuit of the ampliﬁer. 0 Determine the voltage gian vo/v;. r’ III. In the common emitter conﬁguration shown on the diagram below, the
signal source is directly connected to the base. The dc component of 0.18 is
zero. Find the dc emitter current. Assurne B— — 120. Neglect r0, ﬁnd Rg, the
voltage gain vo/v, , the current gain 10/1,, and the outputresistance Ra. IV. Analyze the circuit below to ﬁnd gland VD. The depletion MOSFET has
V; = —1V, K = 0.5mA/V’, and A = 0. g : .(Z.
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In: IMF 7'{IQ‘ V. The transistor in the circuit below has V} = 2V, K = 0.25mA/V’, and
A = 0. Find the dc voltage Vo. Also, replace the transistor with its T—model
and ﬁnd the smallsignal resistance R0,“. VI. For the two circutl’s shown below, calculate the labelled voltages. For all
devices, V, = 1V, K = 0.5mA/V’, and 1‘ = 0. VII. The circuit below is called 3 Wilson current mirror. Assume all BJTs are
matched and have the same ﬁnite B. Show that 10/ I 113; is given by VIII. For the circuit shown below, assume IVBEI = 0.7 V and ,3 is inﬁnite for
all transistors. Find the values of the quantities indicated on the diagram. +sv ...
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 Fall '97
 Cahay

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