Chapter 4 BJT2

# G bjt and mos any change in waveform is considered to

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necessary, e.g. BJT and MOS Any change in waveform is considered to be distortion and is obviously undesirable.

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3/2/12 20 J.P. Chen Performance parameters of amplifie r Voltage source Input voltage Input current Input resistance Payload resistance output voltage output current output resistance Amp lifier : : : : i i i s s R I U R U : : : : o o o L R I U R
3/2/12 21 J.P. Chen Performance parameters of amplifie r 1. Gain 2. Input resistance 3. Output resistance Amp lifier ' o L o L o U R R R U + =

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3/2/12 22 J. P C h e n Performance parameters of amplifier 4. Frequency Bandwidth Low Freq. band High Freq. band Midband L H bw f f f - =
3/2/12 23 J. P C h e n Performance parameters of amplifier 5. Nonlinear distortion coefficient 6. Maximum non distortion output voltage om opp U U 2 2 =

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3/2/12 24 J. P C h e n (a) Conceptual circuit to illustrate the operation of the transistor as an amplifier. (b) The circuit of (a) with the signal source vbe eliminated for dc (bias) analysis. Conceptual Circuit
3/2/12 25 J. P C h e n With the dc sources ( VBE and VCC ) eliminated (short circuited), thus only the signal components are present. Note that this is a representation of the signal operation of the BJT and not an actual amplifier circuit. Conceptual Circuit

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3/2/12 26 J. P C h e n Transconductance Input resistance at base Input resistance at emitter Hybrid π and T model Small-Signal Circuit Models
3/2/12 27 J. P C h e n Development of the diode small-signal model Small-Signal Model of a Diode d i d r

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• Fall '10
• ChengJianping
• Transistor, Bipolar junction transistor, Electronic amplifier, Input Resistance, Early effect

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