ESE 521 Kagan Bipolar Junction Transistor Regions of Operation Saturation

Ese 521 kagan bipolar junction transistor regions of

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ESE 521: KaganBipolar Junction Transistor Regions of Operation: Saturation Region+=expexp22kTqVWNDqAnkTqVWNDNLDqAnICBBBiEBBBEEEiE+=expexp22kTqVWNDNLDqAnkTqVWNDqAnICBBBCCCiEBBBiC+=expexp22kTqVNLDqAnkTqVNLDqAnICBCCCiEBEEEiBICn=IB3Saturation Region:VEB>0 (forward bias) and VCB>0 (forward bias)ICn=IB3I’Cp=I’EpIEp=ICpIEn=IB1IEpIEn=IB1I’Cp=I’EpIf VEB~ VCBthen IE~ IEnIBlarge as it supplies electrons to both EBand CB junctions
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ESE 521: KaganBipolar Junction Transistor Regions of Operation: Cut-Off Region+=12qVqVDNLDqAnIBBEEEiE+=12qVDNLDqAnqVDIBCCCiBC+=1122qVNLDqAnqVNLDqAnICCCiEEEiBIEn=IB1ICn=IB3IEn=IB1Cut-Off Region:VEB<0 (reverse bias) and VCB<0 (reverse bias)ICn=IB3Thermally generated minority carriers driftinto the base→IE<0Similarly elecrons drift into baseIC>0Since NE>>NCthen more minority carriers are generated in the collector
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ESE 521: KaganBipolar Junction Transistor Regions of Operation+=kTqVWNDNLDqAnIEBBBEEEiEexp2=kTqVWNDqAnIEBBBiCexp2=kTqVNLDqAnIEBEEEiBexp2active region:=kTqVWNDqAnICBBBiEexp2+=kTqVWNDNLDqAnICBBBCCCiCexp2=kTqVNLDqAnICBCCCiBexp2inverted region:=EEEiENLDqAnI2=CCCiCNLDqAnI2=CCCiEEEiBNLDqAnNLDqAnI22cut-off region:+=kTqVWNDqAnkTqVWNDNLDqAnICBBBiEBBBEEEiEexpexp22+=kTqVWNDNLDqAnkTqVWNDqAnICBBBCCCiEBBBiCexpexp22+=kTqVNLDqAnkTqVNLDqAnICBCCCiEBEEEiBexpexp22saturation region:VEBVCB
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ESE 521: KaganI-V Characteristics of the Bipolar Junction Transistorcommon base configuration:common emitter configuration:np+p-VCB+-VEB+VEB, IEinputICVBCIoIo+IE1Io+IE2Io+IE3IEVEBVCB, ICoutputVCB=0VCB<few -kT/qnp+p-VEC+-VEB+IBVEBVEB, IBinputVCB>few kT/qICVECIo+IB1+IB2I+IB3shifted VEC=VEB+VBCVBC=0BoEoEdcTEEoEBoBBoBTECpnLWLnDWpDWpDIIinputoutput<<<<=+===ααγα1dcαBoEoEdcEoEEBoBBCpnLWWnDLpDIIinputoutput<<<<===βhighdcβVEC, ICoutputsaturationcut-offactivecut-offactive
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ESE 521: KaganFull I-V Characteristics of the Bipolar Junction Transistornp+p+VEC-+VEB-
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ESE 521: KaganNon-idealities in the Bipolar Junction Transistor1)Recombination in the base2)Base width modulation3)Punch through4)Avalanche Breakdown5)Geometry Effects
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