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2. The voltage that turns on an EMOS device is the a. Gate-source cutoff voltage b. Pinchoff voltage c. Threshold voltage d. Knee voltage 3. Which of these may appear on the data sheet of an enhancement-mode MOSFET? a. VGS(th) b. ID(on) c. VGS(on) d. All of the above 4. The VGS(on) of an n-channel E-MOSFET is a. Less than the threshold voltage b. Equal to the gate-source cutoff voltage c. Greater than VDS(on) d. Greater than VGS(th) 5. An ordinary resistor is an example of a. A three-terminal device b. An active load c. A passive load d. A switching device 6. An E-MOSFET with its gate connected to its drain is an example of a. A three-terminal device b. An active load c. A passive load d. A switching device 7. An E-MOSFET that operates at cutoff or in the ohmic region is an example of a. A current source b. An active load c. A passive load d. A switching device 8. CMOS stands for a. Common MOS b. Active-load switching c. p-channel and n-channel devices d. Complementary MOS 9. VGS(on) is always a. Less than VGS(th) b. Equal to VDS(on) c. Greater than VGS(th) d. Negative
10. With active-load switching, the upper E-MOSFET is a a. Two-terminal device b. Three-terminal device c. Switch d. Small resistance 11. CMOS devices use a. Bipolar transistors b. Complementary E-MOSFETs c. Class A operation d. DMOS devices 12. The main advantage of CMOS is its a. High power rating b. Small-signal operation c. Switching capability d. Low power consumption 13. Power FETs are a. Integrated circuits b. Small-signal devices c. Used mostly with analog signals d. Used to switch large currents 14. When the internal temperature increases in a power FET, the a. Threshold voltage increases b. Gate current decreases c. Drain current decreases d. Saturation current increases 15. Most small-signal E-MOSFETs are found in a. Heavy-current applications b. Discrete circuits c. Disk drives d. Integrated circuits 16. Most power FETS are a. Used in high-current applications b. Digital computers c. RF stages d. Integrated circuits 17. An n-channel E-MOSFET conducts when it has a. VGS > VP b. An n-type inversion layer c. VDS > 0 d. Depletion layers
18. With CMOS, the upper MOSFET is a. A passive load b. An active load c. Nonconducting d. Complementary 19. The high output of a CMOS inverter is a. VDD/2 b. VGS c. VDS d. VDD 20. The RDS(on) of a power FET a. Is always large b. Has a negative temperature coefficient c. Has a positive temperature coefficient d. Is an active load Chapter 15