Anomalous Hall effect in epitaxially grown ferroemagnetic FeGa-Fe3Ga hybrid structure- evidence of

The xrd patterns of the thin films grown at different

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The XRD patterns of the thin films grown at different temperatures are shown in Fig. 3 . The (001) and (002) dif- fraction peaks corresponding to bcc a -Fe crystal structure (A2) are observed for all films, indicating that single bcc a -Fe phase Fe-Ga alloys with (001) crystal orientation were grown on the GaAs(100) substrate. The results are consistent with our previous report. 25 However, the peak of Fe 3 Ga(004) was observed for films grown at 400 ² C. The intensity of this peak became stronger and sharper with further increase in the grown temperature, as seen in the inset of Figure 2 . Note that the Fe 3 Ga has a DO 3 structure and it can be epitaxially grown on the GaAs(001) substrate. 26 , 27 Figures 4(a) and 4(b) show the magnetic hysteresis (M-H) loops of Fe-Ga and Fe 3 Ga/Fe-Ga films in both out-of-plane and in-plane magnetic field directions at room temperature. It can be seen that while the Fe-Ga film exhibits the in-plane mag- netic anisotropy, the out-of-plane magnetic anisotropy of the Fe 3 Ga/Fe-Ga film is stronger than that of the Fe-Ga film. van’t Erve et al. reported that the Fe 3 Ga thin film with DO 3 structure exhibited an out-of-plane magnetic anisotropy, which is FIG. 1. The RHEED patterns of (a) GaAs(001) substrate, and (b)–(d) Fe-Ga thin film grown at 300, 400, and 500 ² C, respectively. FIG. 2. (a)–(c) AFM and (d)–(f) FE-SEM images of the samples grown at 300, 400, and 500 ² C, respectively. FIG. 3. The h -2 h XRD patterns of thin films grown at selected growth tem- perature. Inset shows the high angle scanner from 60 ² to 70 ² . 17C734-2 D. D. Dung and S. Cho J. Appl. Phys. 113 , 17C734 (2013) Downloaded 27 May 2013 to This article is copyrighted as indicated in the abstract. Reuse of AIP content is subject to the terms at:
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consistent with the result calculated for the same DO 3 structure by Wu et al. , 26 , 28 Figures 4(c) and 4(d) show diagrams of possi- ble spin configurations for Fe-Ga and Fe 3 Ga/Fe-Ga films, respectively, where magnetic moments rotate with applied mag- netic field in both in-plane and perpendicular directions. Since Fe 3 Ga clusters with perpendicular magnetic anisotropy were embedded in Fe-Ga, the out-of-plane magnetic anisotropy of the Fe 3 Ga/Fe-Ga film was stronger than that of the Fe-Ga film. Figures 5(a) and 5(b) show the Hall resistance vs. magnetic field in J ? H , where J and H are the current density and mag- netic field. The anomalous Hall resistance was observed in both Fe-Ga and Fe 3 Ga/Fe-Ga thin films. As discussed above, there are three main mechanisms for AHE, including intrinsic deflec- tion, side jump, and skew scattering. The AHE observed in a homogeneous Fe-Ga film has been related to intrinsic defec- tion. 25 Due to the strong in-plane magnetic anisotropy of the single crystal Fe-Ga film, no saturation trend of the Hall resist- ance has been observed for this film. However, the saturation trend of the Hall resistance was observed for the Fe 3 Ga/Fe-Ga hybrid structure. These results are consistent with the out-of- plane M-H loops observed for the films (Figs. 5(a) and 5(b) ).
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  • Fall '13
  • SunglaeCho
  • Magnetism, Magnetic Field, Magnetic moment, Magnetic anisotropy, out-of-plane magnetic anisotropy, in-plane magnetic anisotropy

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