Professor n cheung uc berkeley lecture 22 ee143 f2010

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Professor N Cheung, U.C. Berkeley Lecture 22 EE143 F2010 8 A) Accumulation: V G < V FB for p-type substrate V Si 0, so V ox = V G - V FB Q Si = charge/unit area in Si = C ox ( V G - V FB ) MOS Operation Modes M O Si (p-Si) Thickness of accumulation layer ~0 holes Charge Distribution
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