Chapter 4 BJT2

# 3212 11 j p c h e n 1 using simple constant voltage

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3/2/12 11 J. P C h e n 1. Using simple constant-voltage drop model, assuming irresp ective of the exact value of currents. 3. Assuming the device operates at the active region, we can apply the relationship between IB, IC, and IE, to determine the voltage VCE or VCB. 4. Check the value of VCE or VCB , if i. VBE>0.7V and VC > VB , the assumption is correct. ii. VBE>0.7V and VC < VB , the assumption is incorrect. iii. It means the BJT is operating in saturation region. Thus we s hall assume VCE = VCE(sat) (0.2~0.3V) to obtain IC . Here th e common emitter current gain is defined as forced = IC/IB , we will find forced < . DC Analysis Steps V v BE 7 . 0

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3/2/12 12 J. P C h e n Example For =100, find terminal currents and voltages.
3/2/12 13 J. P C h e n Example =100 0.7 ! BE v V =

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3/2/12 14 J. P C h e n Example
3/2/12 15 J. P C h e n Example

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3/2/12 16 J. P C h e n Example
3/2/12 17 J. P C h e n Example

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3/2/12 18 J. P C h e n Conceptual Circuits Small-signal equivalent circuit models Application of the small-signal equivalent circui t models Augmenting the hybrid π model. The Transistor as an Amplifier
3/2/12 19 J. P C h e n The Concept of Signal Amplification The signal to be amplified is usually time- variable. The essence of amplification is the control and conversion of energy The characteristics of amplification is power amplification The component that can control energy is necessary, e.g. BJT and MOS

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• Fall '10
• ChengJianping
• Transistor, Bipolar junction transistor, Electronic amplifier, Input Resistance, Early effect

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