The n pockets ldd doped to medium conc 1e18 are used

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The n-pockets (LDD) doped to medium conc (~1E18) are used to smear out the strong E-field between the channel and heavily doped n+ S/D, in order to reduce hot-carrier generation. n + n + n n SiO 2 CVD oxide spacer p-sub
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 10 n implant for LDD SiO 2 CVD SiO 2 Directional RIE of CVD Oxide CVD conformal deposition SiO 2 LDD Process Flow using Ion Implantation
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 11 Spacer left when CVD SiO 2 is just cleared on flat region. n n 0.05 m m 0.25 m m n + n + n + implant n n
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Professor N Cheung, U.C. Berkeley EE143 F2010 RIE-based Stringers / Spacers Leftover material must be removed by overetching
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 13 Self-Aligned Silicide Process (SALICIDE) using Ion Implantation and Metal-Si reaction n + n + TiSi 2 (metal) poly-gate Metal silicides are metallic. They lower the sheet resistance of S/D and the poly-gate
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 14 n + n + SiO 2 oxide spacer SALICIDE Process Flow
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 15 n + n + SiO 2 Ti Ti deposition Si Ti TiSi 2 Ti Ti Selective etch to remove unreacted Ti only . 2 ) 700 ( 2 2 SiO with react not will Ti TiSi Si Ti C treatment heat o
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