b) Again simulate using the provided gain_testbench, and make plots of the real and imaginary parts of the 4 Y-parameters. This is an elementary introduction to device model extraction: S-parameters are measured of a transistor, converted to Y-parameters, and compared to that of a model. Problem 3: Ri=0 Ohms, gm=200 mS, Rds=50 Ohms, Cgs=100 fF. The source is grounded. a) Compute by hand the four S-parameters. Make a hand sketch of dB magnitude of S11 and S21 vs frequency on a log scale (DC-300 GHz) b) Simulate using the provided gain_testbench, and make plots of dB magnitude of S11 and S21 vs frequency Please also make plots on the Smith chart of S11 and S22, and polar plots of S21 and S12.