D 4 points why do we anneal the chip with forming gas

This preview shows page 3 - 8 out of 11 pages.

(d) (4 points) Why do we anneal the chip with forming gas after metallization ? (e)(4 points) Why do we use XeF2 to release the MEMS structure instead of using KOH ?
Image of page 3

Subscribe to view the full document.

4 Problem 1 Lab Questions continued (f ) The I D versus V G plot of the EE143 MOSFET [Device 8D with W/L = 15 μ m/ 10 μ m] is shown below. The V DS bias is kept constant at 50mV. (i) (5 points) Extract the threshold voltage from the data. Show all your calculations. (ii) (5 points) From C-V measurement, we know the gate oxide thickness is 73nm. Extract the channel electron mobility μ n from the I-V data. Show all your calculations.
Image of page 4