(d) (4 points) Why do we anneal the chip with forming gas after metallization ? (e)(4 points) Why do we use XeF2 to release the MEMS structure instead of using KOH ?
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4Problem 1 Lab Questions continued (f ) The IDversus VGplot of the EE143 MOSFET [Device 8D with W/L = 15μm/ 10μm] is shown below. The VDSbias is kept constant at 50mV. (i) (5 points) Extract the threshold voltage from the data. Show all your calculations. (ii) (5 points) From C-V measurement, we know the gate oxide thickness is 73nm. Extract the channel electron mobility μnfrom the I-V data. Show all your calculations.