Fig 15 i Switch AC GND DC switch make copy of waveform above The vertical shift

Fig 15 i switch ac gnd dc switch make copy of

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Fig 1.5 i. Switch AC-GND-DC switch, make copy of waveform above. The vertical shift of the waveform was equal to the battery voltage. Full file at
214 The shape of the sinusoidal waveform was not affected by changing the positions of the AC-GND-DC coupling switch. j. The signal shifted downward by an amount equal to the voltage of the battery. Fig 1.6 Part 5: Problems 1. b. f = 2000/(2*3.14) = 318Hz c. T = l/ f =1/318 = 3.14ms d. by inspection: V(peak) = 20V e. V(peak-peak) = 2*Vpeak = 40V f. V(rms) =.707 * 20 = 14.1V g. by inspection: Vdc = 0V 2. a. f = 2 * 3.14 * 4000/(2 * 3.14*) = 4 KHz c. T = l/ f =1/4 Khz = 250 s d. by inspection:Vpeak)= 8 mV e. V(peak-peak) = 2 * V(peak) = 16 mV f. V(rms) = .707 * 8 mV = 5.66 mV g. by inspection: Vdc = 0V 3. V(t) = 1.7 sin (2.51 Kt) volts Part 6: Computer Exercise PSpice Simulation 1-1 See Probe Plot page 191. Full file at
215 Full file at
216 EXPERIMENT 2: DIODE CHARACTERISTICS Part 1: Diode Test diode testing scale Table 2.1 Test Forward Reverse Si (mV) 535 OL Ge (mV) 252 OL Both diodes are in good working order. Part 2. Forward-bias Diode characteristics b. Table 2.3 V R (V) V D (mV) I D (mA) .1 453 .1 .2 481 .2 .3 498 .3 .4 512 .4 .5 528 .5 .6 532 .6 .7 539 .7 .8 546 .8 V R (V) .9 1 2 3 4 5 6 7 8 9 10 V D (mV) 551 559 580 610 620 630 640 650 650 660 660 I D (mA) .9 1 2 3 4 5 6 7 8 9 10 d. Table 2.4 V R (V) V D (mV) I D (mA) .1 156 .1 .2 187 .2 .3 206 .3 .4 217 .4 .5 229 .5 .6 239 .6 .7 247 .7 .8 254 .8 V R (V) .9 1 2 3 4 5 6 7 8 9 10 V D (mV) 260 266 300 330 340 360 370 380 390 400 400 I D (mA) .9 1 2 3 4 5 6 7 8 9 10 e. Fig 2.5 Full file at
217 f. Their shapes are similar, but for a given I D , the potential V D is greater for the silicon diode compared to the germanium diode. Also, the Si has a higher firing potential than the germanium diode. Part 3: Reverse Bias b. R m = 9.9 Mohms V R (measured) = 9.1 mV I S (calculated) = 8.21 nA c. V R (measured) = 5.07 mV I S (calculated) = 4.58 A d. The I S level of the germanium diode is approximately 500 times as large as that of the silicon diode. e. R DC (Si) = 2.44*10 9 ohms R DC (Ge) = 3.28 M*10 6 ohms These values are effective open-circuits when compared to resistors in the kilohm range. Part 4: DC Resistance a. Table 2.5 I D (mA) V D (mV) R DC (ohms) .2 350 1750 1.0 559 559 5.0 630 126 10.0 660 66 b. Table 2.6 I D (mA) V D (mV) R DC (ohms) .2 80 400 1.0 180 180 5.0 340 68 10.0 400 40 Part 5: AC Resistance a. (calculated) r ac = 3.4 ohms b. (calculated) r ac = 2.9 ohms c. (calculated) r ac = 27.0 ohms d. (calculated) r ac = 26.0 ohms Part 6: Firing Potential V T (silicon) = 540 mV V T (germanium) = 260 mV Full file at
218 Part 7: Temperature Effects c. For an increase in temperature, the forward diode current will increase while the voltage V D across the diode will decline. Since R D = V D / I D , therefore, the resistance of a diode declines with increasing temperature.

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