Fig 15 i Switch AC GND DC switch make copy of waveform above The vertical shift

Fig 15 i switch ac gnd dc switch make copy of

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Fig 1.5 i. Switch AC-GND-DC switch, make copy of waveform above. The vertical shift of the waveform was equal to the battery voltage. Full file at
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214 The shape of the sinusoidal waveform was not affected by changing the positions of the AC-GND-DC coupling switch. j. The signal shifted downward by an amount equal to the voltage of the battery. Fig 1.6 Part 5: Problems 1. b. f = 2000/(2*3.14) = 318Hz c. T = l/ f =1/318 = 3.14ms d. by inspection: V(peak) = 20V e. V(peak-peak) = 2*Vpeak = 40V f. V(rms) =.707 * 20 = 14.1V g. by inspection: Vdc = 0V 2. a. f = 2 * 3.14 * 4000/(2 * 3.14*) = 4 KHz c. T = l/ f =1/4 Khz = 250 s d. by inspection:Vpeak)= 8 mV e. V(peak-peak) = 2 * V(peak) = 16 mV f. V(rms) = .707 * 8 mV = 5.66 mV g. by inspection: Vdc = 0V 3. V(t) = 1.7 sin (2.51 Kt) volts Part 6: Computer Exercise PSpice Simulation 1-1 See Probe Plot page 191. Full file at
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215 Full file at
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216 EXPERIMENT 2: DIODE CHARACTERISTICS Part 1: Diode Test diode testing scale Table 2.1 Test Forward Reverse Si (mV) 535 OL Ge (mV) 252 OL Both diodes are in good working order. Part 2. Forward-bias Diode characteristics b. Table 2.3 V R (V) V D (mV) I D (mA) .1 453 .1 .2 481 .2 .3 498 .3 .4 512 .4 .5 528 .5 .6 532 .6 .7 539 .7 .8 546 .8 V R (V) .9 1 2 3 4 5 6 7 8 9 10 V D (mV) 551 559 580 610 620 630 640 650 650 660 660 I D (mA) .9 1 2 3 4 5 6 7 8 9 10 d. Table 2.4 V R (V) V D (mV) I D (mA) .1 156 .1 .2 187 .2 .3 206 .3 .4 217 .4 .5 229 .5 .6 239 .6 .7 247 .7 .8 254 .8 V R (V) .9 1 2 3 4 5 6 7 8 9 10 V D (mV) 260 266 300 330 340 360 370 380 390 400 400 I D (mA) .9 1 2 3 4 5 6 7 8 9 10 e. Fig 2.5 Full file at
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217 f. Their shapes are similar, but for a given I D , the potential V D is greater for the silicon diode compared to the germanium diode. Also, the Si has a higher firing potential than the germanium diode. Part 3: Reverse Bias b. R m = 9.9 Mohms V R (measured) = 9.1 mV I S (calculated) = 8.21 nA c. V R (measured) = 5.07 mV I S (calculated) = 4.58 A d. The I S level of the germanium diode is approximately 500 times as large as that of the silicon diode. e. R DC (Si) = 2.44*10 9 ohms R DC (Ge) = 3.28 M*10 6 ohms These values are effective open-circuits when compared to resistors in the kilohm range. Part 4: DC Resistance a. Table 2.5 I D (mA) V D (mV) R DC (ohms) .2 350 1750 1.0 559 559 5.0 630 126 10.0 660 66 b. Table 2.6 I D (mA) V D (mV) R DC (ohms) .2 80 400 1.0 180 180 5.0 340 68 10.0 400 40 Part 5: AC Resistance a. (calculated) r ac = 3.4 ohms b. (calculated) r ac = 2.9 ohms c. (calculated) r ac = 27.0 ohms d. (calculated) r ac = 26.0 ohms Part 6: Firing Potential V T (silicon) = 540 mV V T (germanium) = 260 mV Full file at
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218 Part 7: Temperature Effects c. For an increase in temperature, the forward diode current will increase while the voltage V D across the diode will decline. Since R D = V D / I D , therefore, the resistance of a diode declines with increasing temperature.
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