C berkeley lecture 18 ee143 f2010 30 pattern mask

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N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 30 Pattern mask opening For p-well implant Shallow implantation of boron Diffusion drive-in To form p-well in oxidizing ambient Remove masking oxide
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 31 Pad oxide growth and CVD Si 3 N 4 . Pattern field oxide regions Blanket implant of Boron for p channel stop inside p-well Protect p-well regions with photoresist. Implant Ph to form n channel stop outside p-well regions LOCOS Oxidation Thermal oxidation of gate SiO 2
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 32 Pattern poly-Si gates and poly lines Protect ALL n-channel transistors with photoresist. Boron implantation to form source/drain of p- channel transistors and contacts to p-well CVD poly-Si
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 33 Protect ALL p-channel transistors with photoresist. CVD SiO 2 (Low-temperature oxide) Pattern and etch contact openings to source/drain, well contact, and substrate contact. Arsenic implantation to form source/drain of n-channel transistors and contacts to n- substrate
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 34 Metal 1 deposition Pattern and etch Metal 1 interconnects CVD SiO 2
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Professor N Cheung, U.C. Berkeley Lecture 18 EE143 F2010 35 Pattern and etch contact openings to Metal 1. Metal 2 deposition. Pattern, and etch Metal 2 interconnects.
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  • Fall '04
  • ee142
  • Ion implantation, Silicon dioxide, Professor N Cheung

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