8 December 2019 EEE3312 13 Exercise3 Fill in the blanks with the appropriate

8 december 2019 eee3312 13 exercise3 fill in the

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8 December 2019 EEE3312 13
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Exercise.3 Fill in the blank(s) with the appropriate word(s) i. A MOSFET operates in the …………………………..mode when vGS < vGS(th) ii. In the ohmic region of operation of a MOSFET vGS vGS (th) is greater than …………………... iii. rDS (ON) of a MOSFET ………………………………… with increasing vGS. iv. In the active region of operation the drain current iD is a function of …………………….. alone and is independent of …………………………... v. The primary break down voltage of MOSFET is ………………….of the drain current. vi. Unlike BJT a MOSFET does not undergo………………………………….vii. …………… temperature coefficient of rDS(ON) of MOSFETs facilitates easy …………… of the devices. viii. In a Power MOSFET the relation ship between iD and vGS vGS(th) is almost ………………. in the active mode of operation. ix. The safe operating area of a MOSFET is restricted on the left hand side by the …………………..limit. 8 December 2019 EEE3312 14
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Exercise.4 1. Fill in the blank(s) with the appropriate word(s) i. The Gate-Source capacitance of a MOSFET is the ………………… among all three capacitances. ii. The Gate-Drain transfer capacitance of a MOSFET has large value in the region and small value in the …. region. iii. During the turn on delay time the MOSFET gate source voltage rises from zero to the ……… voltage. iv. The voltage fall time of a MOSFET is …… proportional to the gate charging resistance. v. Unlike BJT the switching delay times in a MOSFET can be controlled by proper design of the ……………………… circuit. 8 December 2019 EEE3312 15
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Exercise .5 Fill in the blank(s) with the appropriate word(s) i. The maximum voltage a MOSFET can with stand is …………….. of drain current. ii. The FBSOA and RBSOA of a MOSFET are ………………………….. iii. The gate source threshold voltage of a MOSFET …………………with junction temperature while the on state resistance …………………………. with junction temperature. iv. The gate oxide of a MOSFET can be damaged by ………………………… electricity. v. The reverse break down voltage of the body diode of a MOSFET is equal to ……………………. while its RMS forward current rating is equal to …………... 8 December 2019 EEE3312 16
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5- IGBT Exercise.1 Fill in the blank(s) with the appropriate word(s). i. An IGBT is a ………………. device combining the advantages of a ………........and a……………ii. IGBT is suitable for ………voltage ………frequency applications. iii. In an IGBT cell structure a ……………type injecting layer is added on top of the drain of an n channel MOSFET. iv. The forward blocking voltage of an IGBT is determined by the …………………..and …………….. of the drain drift layer.
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