Principles of VLSI Design
Subsystem Design
CMPE 413
Control Control is the hard part of design. The regularity found in arithmetic and memory structures usually not present in control structures.
Finite-State machines provide an organized structure for ca

Principles of VLSI Design
Subsystem Design
CMPE 413
Memory
M
AR
YLAND BA L
UN
IVERSITY O F
U M B C
TI
MO
RE COUNT Y
1
1966
UMBC
Principles of VLSI Design
Subsystem Design
CMPE 413
Memory: Architecture
M
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YLAND BA L
UN
IVERSITY O F
U M B

Principles of VLSI Design
Subsystem Design
CMPE 413
Digital Device Components A simple processor illustrates many of the basic components used in any digital system: Memory
Input-Output
Control
Datapath
Datapath: The core - all other components are suppo

Advanced VLSI Design
CMOS Circuit Design
CMPE 413
CMOS Logic Structures
M
AR
YLAND BA L
TI
UN
IVERSITY O F
U M B C
MO
RE COUNT Y
1
1966
UMBC
Advanced VLSI Design
CMOS Circuit Design
CMPE 413
CMOS Logic Structures
M
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YLAND BA L
UN
IVERSITY O F
U M

Advanced VLSI Design
CMOS Circuit Design
CMPE 413
Introduction So far we have looked at full complementary logic structures and the ratioed CMOS inverter.
Alternative CMOS logic configurations are also possible when designs are constrained by: High-speed

Principles of VLSI Design
Performance Estimation
CMPE 413
Transistor Sizing So far, we have assumed that to get symmetric rise and fall times: W p (2 3) W n
Does this rule reduce overall delay ?
Assume W = 2W Ceq = Cd + Cg p n t inv pair = t fall + t rise

Principles of VLSI Design
Performance Estimation
CMPE 413
Introduction Need simple models to estimate system performance in terms of signal delay and power dissipation.
Issues include: Resistance, capacitance and inductance calculations. Delay estimations

Principles of VLSI Design
CMOS Processing Technology
CMPE413
CMOS Processing Technology P-well process: Similar to n-well process except a p-well is implanted rather than an nwell. p-well region for n-transistors
p-well lightly doped n-substrate
Produces

Principles of VLSI Design
CMOS Processing Technology
CMPE413
CMOS Processing Technology Silicon: a semiconductor with resistance between that of conductor and an insulator. Conductivity of silicon can be changed several orders of magnitude by introducing

Principles of VLSI Design
Details of the MOS Transistor
CMPE413
MOS Transistor Definitions n-type MOS: Majority carriers are electrons. p-type MOS: Majority carriers are holes.
Positive/negative voltage applied to the gate (with respect to substrate) enha

Principles of VLSI Design
Technology
CMPE 413
IC Technology What advantages do ICs have over discrete components?
Size: Sub-micron vs. millimeter/centimeter.
Speed and Power: Smaller size of IC components yields higher speed and lower power consumption

Principles of VLSI Design
Representations
CMPE 413
Circuit and System Representations IC design is hard because designers must juggle several different problems:
Multiple levels of abstraction: IC designs requires refining an idea through many levels of

Principles of VLSI Design Principles of VLSI Design
Introduction
CMPE 413/CMSC 711
M
AR
YLAND BA L
TI
UN
IVERSITY O F
U M B C
MO
RE COUNT Y
1
1966
UMBC
Principles of VLSI Design
Introduction
CMPE 413/CMSC 711
Purpose of the Course
M
AR
YLAND BA L
TI
UN
IV

Principles of VLSI Design
Basics
CMPE 413
MOS: Metal-Oxide-Silicon
Metal gate has been replaced by polysilicon or poly in today's processes. Can be used as a further mask to allow precise dfinition of the source and drain regions. Minimizes gate-to-source