ECE2300 HW3
Due 9/20/16
6
6
Find the Norton Equivalent circuit between nodes A and B:
V1 = 10V
R1 = 10
R2 = 10
R3 = 20
4. For the circuit below, what load resistance RL should be chosen for maximum power transfer to that
load? (Hint, find the thevenin equ
ECE 2300 AU16
1.
Homework 2
Due Tuesday 9/13/16
a. Find the equivalent resistance between terminals A and B in the circuit below.
b. Draw a short circuit between terminals C and D. What is the equivalent resistance
between terminals A and B?
2. Use Node-V
ECE 3030 Homework 3 Solutions
1. f E
1
E EF
1 exp
kT
(a) E E F kT , f E
f E 0.269
1
1 exp 1
(b) E E F 5kT , f E
1
1 exp 5
f E 6.69 10 3
(c) E E F 10kT , f E
1
1 exp 10
f E 4.54 10 5
2.
(a) For E E1
f E
1
E EF
1 exp 1
kT
E1 E F
exp
Then
kT
ECE 3030 Spring 2014 Homework 2 Solutions
1. (a) Kinetic energy E = 100 eV = 100 x 1.6x10-19 J = 1.6x10-17 J. Momentum p = (2mE)1/2 =
[2x(9.11x10-31 kg)(1.6x10-17 J)]1/2 = 5.4x10-24 kg m/s.
= h/p= 6.67x10-34 J-s/5.4x10-24 kg m/s = 1.235 x 10-10 m = 1.235
ECE 3030 2014 Homework 1 Solutions
1. (a) a = 5.43 . 1/4 of the body diagonal (3 a) = 3 a/4
so 2r = 3 a/4 and a = 8r/3.
o
a 3 5.43 3
1.176 A
Then r 8
8
Center of one silicon atom to center of nearest neighbor = 2r = 2.35 .
8
5 10 22 -3
3
(b) Number den
ECE 3030 Spring 2014 Homework 4 Solutions
1.
Television phosphors: From Google, band gap Eg for ZnS is 3.6 eV. Thus light
emission throughout the visible spectrum is possible with proper doping. Since Eg = 1.73
eV for CdSe, only deep red and infrared are
Left: Pulling of a Si
crystal from the melt
Crystal
Growing
From the
Melt
Below: Silicon Crystal grown by the Czochralski
method. This large single-crystal ingot provides 20-cm
(8-in.)-diameter wafers when sliced using a diamond
saw. For size comparison,
ECE 3030 Spring 2014
HOMEWORK ASSIGNMENT NO. 7
DUE: Monday, March 24, 2014 in class or at 5 pm in CL387
Please complete the following problems:
1. Calculate the capacitance for the following Si n+-p junction.
Na = 1015 cm-3; Area = 0.001 cm2; Reverse bias
ECE 3030 Spring 2014
HOMEWORK ASSIGNMENT NO. 8
DUE: Friday, March 28, 2014 in class or at 5 pm in CL387 (under door)
1. What is the conductivity of a piece of Ge (ni = 2.5x1013 cm-3) doped with 5x1013
cm-3 donors and 2.5x1013 cm-3 acceptors? (Dn = 100 cm2
ECE 3030 Spring 2014 Homework Assignment No. 4
Due: Monday, February 17th in class or 5 pm in CL 387
1. Why is ZnS a more useful phosphor for television screens than CdSe? If the band
gap of the ternary alloy GaAsP varies with composition from GaAs to GaP
ECE 3030 Spring 2014
HOMEWORK ASSIGNMENT 5
DUE: Monday, February 24, 2014 in class or at 5 pm in my CL 387 office.
Please complete the following exercises:
1. A Si sample with Nd = 1015 cm-3 donors is uniformly optically excited at room temperature
such t
ECE 3030 Spring 2014 Homework Assignment No. 3
Due: Monday, February 3rd in class or 5 pm in CL 387
1. (15 pt) Determine the probability that an energy level is occupied by an electron if the state is
above the Fermi level by (a) kT, (b) 5 kT, and (c) 10
ECE 3030 Spring 2014 Homework Assignment No. 2
Due: Monday, January 27th in class or 5 pm in CL 387
1. (10 pts) (a) Calculate the de Broglie wavelength, = h/p, for an electron with kinetic energy of
100 eV. (b) A 2000 kg truck traveling at 20 m/s, (c) a p
ECE 3030 Spring 2014
HOMEWORK ASSIGNMENT NO. 6
DUE : Friday, February 28, 2014 in class or at 5 pm in CL387
1. Calculate the built-in potential barrier, Vbi (or V0), for Si, Ge, and GaAs pn
junctions if they each have the following dopant concentrations a
ECE 3030 Spring 2014
HOMEWORK ASSIGNMENT NO. 1
DUE: Friday, January 17, 2014 in class or CL387 at 5 pm.
Please complete the following exercises (10 pts each except 20 pts for 5 & 6):
1. If the lattice constant of silicon is 5.43 , calculate (a) the distan