Discovery of thin flat film formation: Ag on GaAs(110)
Ag on GaAs which had shown the quantum size effects (QSEs) using the
low-T deposition and annealing method was an ideal system for further
Goals of the study (1994-95):
1. investigate the novel
RHEED is used to measure the symmetry and structural parameters of a
Useful in combination with MBE growth
Can be used up to about 10-4 Torr
Is very precise
o lattice parameter variations of up to one-thousandth of an
Angstrom can be
The Introduction of the Concept of Electronic Growth
Zhang, Niu, and Shih, Phys. Rev. Lett. 80(24), 5381 (1998)
In the paper, Zhang, Niu, and Shih present a model which can explain the
existence of 2 types of film stability:
Two types of film stability:
Rutherford Backscattering (II)
RBS is a powerful technique for assessing the chemical composition,
crystalline quality, and depth-dependent structure of samples.
Derives from the fact that the target nucleus has a finite mass
We have been considering growth based on the constraints of
surface/interface energetics and supersaturation.
In 1996, a discovery was made of a new kind of growth, unlike the 3 types
described already (2-D, 2-D/3-D, and 3D).
Spin-Polarized Scanning Tunneling Microscopy
SP-STM is a general-purpose technique for imaging spin structure of
surfaces with the ultimate in spatial resolution.
SP-STM combines 2 things:
1. inherent spatial resolution of STM
(lateral 0.2 Angstrom, verti