SOLUTIONS CHAPTER 1
1.1.
Show that Equation (1.6) follows from Equation (1.3).
q2
Solution: Equation (1.3) is dEP =
dr . Integrating both sides we obtain
4 0 r 2
1
q2 1
q2
q2
dEP =
dr =
dr =
+ cons
SOLUTIONS CHAPTER 2
2.1. Of the two materials whose E-K diagrams are shown in Figure P2.1, which
will have the lowest effective mass for electrons? Which will have the lowest
effective mass for holes?
Solutions Chapter 3
3.1. Calculate the speed of an electron in Si with kinetic energy 0.013 eV. Draw
an equilibrium energy band diagram for silicon and indicate where this
electron will be. Compare yo
Chapter 4 Solutions
4.1. Consider a p-type Si sample of length 0.1 m in which the net doping varies
exponentially from 51017 to 51015. Find the electric field.
Following the example of Section 4.2.2,
SOLUTIONS CHAPTER 5
5.1. A silicon pn junction is formed between n-type silicon doped with
ND=1017cm-3 and p-type silicon doped with NA=1016 cm-3.
a)
Sketch the energy band diagram. Label both axes an
Solutions Chapter 6
6.1. Consider a base-collector junction of a silicon BJT (bipolar junction
transistor) like that if Figure 6.1. Assuming a linearly graded junction with
a=1.2x1018 cm-3/um, find Vb
Solutions Chapter 7
7.1. In any circuit, the transistor operation can be understood by examining the
superposition of the transistor characteristics and the conditions imposed by the
circuit (the load
SOLUTIONS TO PROBLEMS FROM CHAPTER 8
8.1. Figure P8.1. shows the ID-VGS characteristic for an NMOS with VDS=50 mV.
It is known for this device that W=10m, L=0.5m, and tox=5 nm.
a) Find the threshold v
Cyan-ma N F amass:
27- h Ej- "H. R: om :3 ----
Q5 and. ¢; 7 a eff-v-aE-«t fro-Linw- T. C(K?K) In [Im ftV]
hut-1 I. w/L 'th puff g! {95 (c, 5r \l, = Von/z ln-I F 4.42 I »
(3,). wué '1. s-Tue .1- \{
SOLUTIONS CHAPTER 9
9.1. For each of the transistors in Figure P9.1, indicate the mode of operation
(forward active, cutoff, saturation, etc.)
9V
9V
4.9 V
5.0V
0.2 V
4.8V
4.1V
(a)
(b)
0.7 V
0.7 V
-5 V
SOLUTIONS CHAPTER 10
'
'
10.1 For an npn transistor with N DE = 1019 cm 3 , N AB = 2 1017 cm 3 ,
'
N DC = 5 1016 cm 3 , WE = 0.13 m , and WB = 0.15 m under the bias conditions of
I B = 20 A and VBC =
ECE561
Midterm I
Winter 2012
Name _
1. For the following circuit calculate the maximum clock frequency. Use the specifications given
below. Draw the longest path on the diagram (20 points).
74LS08:
tp
Q1.(6+6+7+6= 25 points): CMOS DC Analysis and Small Signal Analysis
Consider the following circuit:
Vdd=5V
M1
Io
vo
(W/L)1 =(W/L)2 =2
nCox= 100 A/V2
VTn = 1V
n =0.05 V-1
M2
vs
VS
(a) Find the DC Drain
ECE 323
Winter, 2012
Final
Exam Time: 48 min
Attempt all 5 questions. Only the best 4 out of 5 questions will
count towards your final grade.
Show your work and use the space provided in this booklet.
ECE 323
Spring, 2012
Final
Exam Time: 48 min
Attempt all 5 questions. Only the best 4 out of 5 questions will
count towards your final grade.
Show your work and use the space provided in this booklet.
ECE 323
Spring, 2012
Midterm
Exam Time: 48 min
Attempt all 5 questions. Only the best 4 out of 5 questions will
count towards your final grade.
Show your work and use the space provided in this bookle
ECE 323
Winter, 2012
Final
Exam Time: 48 min
Attempt all 5 questions. Only the best 4 out of 5 questions will
count towards your final grade.
Show your work and use the space provided in this booklet.
ECE 323
Spring, 2012
Midterm
Exam Time: 48 min
Attempt all 5 questions. Only the best 4 out of 5 questions will
count towards your final grade.
Show your work and use the space provided in this bookle