ECE-606
Homework No. 2
Assigned: Jan 27
Due: Feb 3
1. The nanoHUB has several programs that illustrate concepts taught in this course.
You will need to log in to nanoHUB to run these programs. If you
ECE-606
Homework No. 9
Assigned: Nov. 5
Due: Nov. 12
1. The general solution to the minority carrier diffusion equation in the base of a p+/n/pbipolar transistor is.
-x/L
!p (x) = A e
PB
n
x/L
+B e
PB
ECE-606
Homework No. 7
Assigned: Oct. 22
Due: Oct. 29
1. Consider a uniform n-type bar within which a thin sheet of negative charge has been
embedded (for example, by MBE during epitaxial growth). Thi
ECE-606
Homework No. 11
Assigned: Dec. 8
(Note: This assignment is for practice only, and does not need to be turned in.)
1. An MOS capacitor on a p-type silicon substrate has VG=10 V, VFB= 0, Vo= 0.7
ECE-606
Homework No. 4
Assigned: Sept. 24
Due: Oct. 1
1. Do problems 4.9 and 4.11 in the ASF text. In problem 4.11, consider only diagrams
(b) and (e), and answer all questions (a) through (e) for the
ECE-606
Homework No. 8
Assigned: Oct. 29
Due: Nov. 5
1. THOUGHT QUESTIONS on electrostatics and band diagrams (you do NOT have to hand
these questions in).
Can you draw an energy band diagram for an a
ECE-606
Homework No. 10
Assigned: Dec. 1
Due: Dec. 8
1. In this problem we will examine the C-V characteristics of a silicon MOS capacitor as a
function of substrate doping and measurement frequency.
ECE-606
Homework No. 5
Assigned: Oct. 1
Due: Oct. 8
1. Using the Einstein relation and the fact that the electric field E(x) = 1/q !Ei/!x, show that the
electron current (including both drift and diff
ECE-606
Homework No. 9
Assigned: Nov. 5
Due: Nov. 12
1. The general solution to the minority carrier diffusion equation in the base of a p+/n/pbipolar transistor is.
-x/L
!p (x) = A e
PB
n
x/L
+B e
PB
ECE-606
Homework No. 7
Assigned: Oct. 22
Due: Oct. 29
1. Consider a uniform n-type bar within which a thin sheet of negative charge has been
embedded (for example, by MBE during epitaxial growth). Thi
ECE-606
Homework No. 8
Assigned: Oct. 29
Due: Nov. 5
1. THOUGHT QUESTIONS on electrostatics and band diagrams (you do NOT have to hand
these questions in).
Can you draw an energy band diagram for an a
ECE-606
Homework No. 6
Assigned: Oct. 8
Due: Oct. 15
Problems 1 5 are for practice only, and do not need to be turned in.
Solutions will be posted on the web site on Tuesday, Oct. 13.
1. At time t = 0
ECE-606
Homework No. 4
Assigned: Sept. 24
Due: Oct. 1
1. Do problems 4.9 and 4.11 in the ASF text. In problem 4.11, consider only diagrams
(b) and (e), and answer all questions (a) through (e) for the
ECE-606
Homework No. 5
Assigned: Oct. 1
Due: Oct. 8
1. Using the Einstein relation and the fact that the electric field E(x) = 1/q Ei/x, show that the
electron current (including both drift and diffus
ECE-606
Homework No. 1
Assigned: Sept. 3
Due: Sept. 10
1. Work problems 1.2, 1.3, 1.4, 1.5 in ASF.
2. Prove that the [h k l] direction is normal to the (h k l) plane in a cubic system.
3. Show that th
Name_
Student Number_
ECE-606
Practice Test 1
Fall 2009
Solutions will be posted on the
web site on Tuesday Oct. 13
Closed book.
You may refer to one single-page double-sided crib sheet.
Please draw a
ECE-606
Homework No. 1
Assigned: Jan 20
Due: Jen 27
1. Work problems 1.2, 1.3, 1.4, 1.5 in ASF.
2. Prove that the [h k l] direction is normal to the (h k l) plane in a cubic system.
3. Show that the a
Name Q. kw
Student Number
Spring 9.011
Closed book, closed notes
Formula sheets at end of test
One double—sided crib sheet allowed 1. An inﬁnitely-long semiconductor bar is uniformly doped with 10” do
ECE-606
Homework No. 3
Assigned: Feb. 8
Due: Feb. 17
1. Consider the two-dimensional space lattice shown below:
This lattice is finite in extent, and the boundaries can be considered infinite potentia
H53
HE)
60 ENERGY BAND THEORY
unknowns are non-zero) only when the determinant formed from the coefficients of the
unknowns is equal to zero. Thus the first bracketed expression in eq. (3.14a) tim
r ‘ 0'?an fem":
(cud!- o'i 83)
x'- U”) edge road
9- (HI) {In pow}
Fig. 3.12 First Brillouin zone for materials crystallizing in the diamond and zincblcnde lat—
tices. (After Blakemore.“l Reprinted wit
ECE-606
Homework No. 10
Assigned: Dec. 1
Due: Dec. 8
1. In this problem we will examine the C-V characteristics of a silicon MOS capacitor as a
function of substrate doping and measurement frequency.
ECE-606
Homework No. 11
Assigned: Dec. 8
(Note: This assignment is for practice only, and does not need to be turned in.)
1. An MOS capacitor on a p-type silicon substrate has VG=10 V, VFB= 0, Vo= 0.7