ECE-606
Homework No. 2
Assigned: Jan 27
Due: Feb 3
1. The nanoHUB has several programs that illustrate concepts taught in this course.
You will need to log in to nanoHUB to run these programs. If you dont already
have a user account, you will need to crea
ECE-606
Homework No. 9
Assigned: Nov. 5
Due: Nov. 12
1. The general solution to the minority carrier diffusion equation in the base of a p+/n/pbipolar transistor is.
-x/L
!p (x) = A e
PB
n
x/L
+B e
PB
If !pn(x) is known at the boundarys x = 0 and x = W, s
ECE-606
Homework No. 7
Assigned: Oct. 22
Due: Oct. 29
1. Consider a uniform n-type bar within which a thin sheet of negative charge has been
embedded (for example, by MBE during epitaxial growth). This charge is fixed in the lattice
and cannot move. This
ECE-606
Homework No. 11
Assigned: Dec. 8
(Note: This assignment is for practice only, and does not need to be turned in.)
1. An MOS capacitor on a p-type silicon substrate has VG=10 V, VFB= 0, Vo= 0.7 V, and
F= 0.34 V.
(a) Calculate S and VR for QN/COX =
ECE-606
Homework No. 4
Assigned: Sept. 24
Due: Oct. 1
1. Do problems 4.9 and 4.11 in the ASF text. In problem 4.11, consider only diagrams
(b) and (e), and answer all questions (a) through (e) for these two diagrams.
2. A silicon wafer is doped 2x1018 cm-
ECE-606
Homework No. 8
Assigned: Oct. 29
Due: Nov. 5
1. THOUGHT QUESTIONS on electrostatics and band diagrams (you do NOT have to hand
these questions in).
Can you draw an energy band diagram for an arbitrary charge distribution? Try these
samples below (
ECE-606
Homework No. 10
Assigned: Dec. 1
Due: Dec. 8
1. In this problem we will examine the C-V characteristics of a silicon MOS capacitor as a
function of substrate doping and measurement frequency. Log on to nanoHUB.org, go to
the ABACUS tool set, and s
ECE-606
Homework No. 5
Assigned: Oct. 1
Due: Oct. 8
1. Using the Einstein relation and the fact that the electric field E(x) = 1/q !Ei/!x, show that the
electron current (including both drift and diffusion) can be written .
Jn(x) = n n(x) !Fn/!x
where Fn
ECE-606
Homework No. 9
Assigned: Nov. 5
Due: Nov. 12
1. The general solution to the minority carrier diffusion equation in the base of a p+/n/pbipolar transistor is.
-x/L
!p (x) = A e
PB
n
x/L
+B e
PB
If pn(x) is known at the boundarys x = 0 and x = W, sh
ECE-606
Homework No. 7
Assigned: Oct. 22
Due: Oct. 29
1. Consider a uniform n-type bar within which a thin sheet of negative charge has been
embedded (for example, by MBE during epitaxial growth). This charge is fixed in the lattice
and cannot move. This
ECE-606
Homework No. 8
Assigned: Oct. 29
Due: Nov. 5
1. THOUGHT QUESTIONS on electrostatics and band diagrams (you do NOT have to hand
these questions in).
Can you draw an energy band diagram for an arbitrary charge distribution? Try these
samples below (
ECE-606
Homework No. 6
Assigned: Oct. 8
Due: Oct. 15
Problems 1 5 are for practice only, and do not need to be turned in.
Solutions will be posted on the web site on Tuesday, Oct. 13.
1. At time t = 0, a uniformly doped p-type semiconductor is struck by a
ECE-606
Homework No. 4
Assigned: Sept. 24
Due: Oct. 1
1. Do problems 4.9 and 4.11 in the ASF text. In problem 4.11, consider only diagrams
(b) and (e), and answer all questions (a) through (e) for these two diagrams.
2. A silicon wafer is doped 2x1018 cm-
ECE-606
Homework No. 5
Assigned: Oct. 1
Due: Oct. 8
1. Using the Einstein relation and the fact that the electric field E(x) = 1/q Ei/x, show that the
electron current (including both drift and diffusion) can be written .
Jn(x) = n n(x) Fn/x
where Fn is t
ECE-606
Homework No. 1
Assigned: Sept. 3
Due: Sept. 10
1. Work problems 1.2, 1.3, 1.4, 1.5 in ASF.
2. Prove that the [h k l] direction is normal to the (h k l) plane in a cubic system.
3. Show that the angle between two planes (or two directions) is
cos("
Name_
Student Number_
ECE-606
Practice Test 1
Fall 2009
Solutions will be posted on the
web site on Tuesday Oct. 13
Closed book.
You may refer to one single-page double-sided crib sheet.
Please draw a BOX around your final answers.
ECE-606
Homework No. 1
Assigned: Jan 20
Due: Jen 27
1. Work problems 1.2, 1.3, 1.4, 1.5 in ASF.
2. Prove that the [h k l] direction is normal to the (h k l) plane in a cubic system.
3. Show that the angle between two planes (or two directions) is
cos(" )
Name Q. kw
Student Number
Spring 9.011
Closed book, closed notes
Formula sheets at end of test
One double—sided crib sheet allowed 1. An inﬁnitely-long semiconductor bar is uniformly doped with 10” donors per c1113. The
region it < 0 has a minority carrie
ECE-606
Homework No. 3
Assigned: Feb. 8
Due: Feb. 17
1. Consider the two-dimensional space lattice shown below:
This lattice is finite in extent, and the boundaries can be considered infinite potential
barriers so that any electrons in the crystal are con
H53
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60 ENERGY BAND THEORY
unknowns are non-zero) only when the determinant formed from the coefficients of the
unknowns is equal to zero. Thus the first bracketed expression in eq. (3.14a) times
the second bracketed expression in eq. (3.14b) minus
r ‘ 0'?an fem":
(cud!- o'i 83)
x'- U”) edge road
9- (HI) {In pow}
Fig. 3.12 First Brillouin zone for materials crystallizing in the diamond and zincblcnde lat—
tices. (After Blakemore.“l Reprinted with permission.) ‘ E.’ ‘4 RC\O~A‘WHS L \9 m 3"]: I
Wow ‘H
ECE-606
Homework No. 10
Assigned: Dec. 1
Due: Dec. 8
1. In this problem we will examine the C-V characteristics of a silicon MOS capacitor as a
function of substrate doping and measurement frequency. Log on to nanoHUB.org, go to
the ABACUS tool set, and s
ECE-606
Homework No. 11
Assigned: Dec. 8
(Note: This assignment is for practice only, and does not need to be turned in.)
1. An MOS capacitor on a p-type silicon substrate has VG=10 V, VFB= 0, Vo= 0.7 V, and
!F= 0.34 V.
(a) Calculate !S and VR for QN/COX