1
Chapter 10 Problem Set
Chapter 10 PROBLEMS
1. [C, None, 9.2] For the circuit in Figure 0.1, assume a unit delay through the Register and Logic blocks (i.e., tR = tL = 1). Assume that the registers, which are positive edge-triggered, have a set-up
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences
Last modified on November 19, 2006 by Karl Skucha ([email protected])
Borivoje Nikoli
Homework #9
EE 141
Problem #1: Power in CMOS A G1 B C D 50
UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences
Last modified on November 7, 2002 by Henry Jen and Stanley Wang ([email protected])
Borivoje Nikolic
Homework #9
EECS 141
Problem
chapter7-ex.fm Page 1 Wednesday, October 29, 2003 11:52 PM
1
Chapter 7 Problem Set
Chapter 7 PROBLEMS
1. [M, None, 7.4] Figure 1 shows a practical implementation of a pulse register. Clock Clk is ideal with 50% duty cycle.
V DD
Q
X
Q
D Clk d
C
CHAPTER
5
THE CMOS INVERTER
Quantification of integrity, performance, and energy metrics of an inverter Optimization of an inverter design
5.1 5.2 5.3
Exercises and Design Problems The Static CMOS Inverter An Intuitive Perspective Evaluating the
MOSFET Fundamentals
Monday, February 01, 2010
08:43
Class Notes Page 1
Class Notes Page 2
Class Notes Page 3
Class Notes Page 4
Class Notes Page 5
Class Notes Page 6
MOSFET Fundamentals
Wednesday, February 03, 2010
08:45
Class Notes Page 1
Class Notes Page 2
Class Notes Page 3
Class Notes Page 4
Class Notes Page 5
Class Notes Page 6
L t
Lecture
Objectives
Obj ti
Semiconductor Fabrication
and Layout Design Rules
Professor Sunil Bhave
p
CU School of Electrical and Computer
Engineering
z
z
z
February 3, 2010
T d Topics
Todays
T i
z
z
z
z
z
z
z
Review of semiconductor physics and
devices
ECE 4740 Practice Prelim 1
Spring 2011
Subscript convention:
G: gate, D: drain, S: source, B: bulk (substrate/well), n: NMOSFET, p: PMOSFET
NMOSFET current equations:
V DS > VGS VT
VDS < VGS VT
k n k n'
W
L
k n' W
(VGS VT )2 (1 + VDS )
2 L
V2
W
(VGS VT
ECE 4740 Practice Prelim 1
Spring 2011
Subscript convention:
G: gate, D: drain, S: source, B: bulk (substrate/well), n: NMOSFET, p: PMOSFET
NMOSFET current equations:
V DS > VGS VT
VDS < VGS VT
k n k n'
W
L
k n' W
(VGS VT )2 (1 + VDS )
2 L
V2
W
(VGS VT
ECE 4740 Prelim 1
Spring 2011
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. Only answers on the
exam papers will count towards credit, which should be your own independent work.
Semiconductor equations:
q
2 = F =
n p
ECE 4740 Prelim 3
Spring 2011
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. You
can bring the equation sheet from Prelims 1 and 2 too as well. Only answers on the exam
papers will count towards credit, which should be
ECE 4740 Prelim 3 Solution
Spring 2011
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. You
can bring the equation sheet from Prelims 1 and 2 too as well. Only answers on the exam
papers will count towards credit, which
Lecture 5
Inverter Delay and
Sizing
I
Inverter
t Capacitive
C
iti Load
L d
z
z
Many caps between different nodes
Replace with single cap to GND
z
Professor Sunil Bhave
p
CU School of Electrical and Computer
Engineering
z
Miller effect!
Mill
ff !
Linearize
ECE 4740 Prelim 2 Solution
Spring 2012
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. You
can bring the equation sheet from Prelim 1 too as well. Only answers on the exam papers
will count towards credit, which should
ECE 4740 Prelim 2
Spring 2012
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. You
can bring the equation sheet from Prelim 1 too as well. Only answers on the exam papers
will count towards credit, which should be your o
ECE 4740 Prelim 1 Solution
Spring 2012
Tear off the equation page and write your name in the second page before you start. You are also allowed to
use ONE note sheet of 8.5 by 11 (both sides) to aid your exam. Only answers on the exam papers will count
to
ECE 4740 Prelim 1 Solution
Spring 2011
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. Only answers on the
exam papers will count towards credit, which should be your own independent work.
Semiconductor equations:
q
2
ECE 4740 Prelim 2 Solution
Spring 2011
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. You
can bring the equation sheet from Prelim 1 too as well. Only answers on the exam papers
will count towards credit, which should
ECE 4740 Prelim 2
Spring 2011
You are allowed to bring ONE note sheet of 8.5 by 11 (both sides) to aid your exam. You
can bring the equation sheet from Prelim 1 too as well. Only answers on the exam papers
will count towards credit, which should be your o
ECE 4740 Prelim 1
Spring 2012
Tear off the equation page and write your name in the second page before you start. You are also allowed to
use ONE note sheet of 8.5 by 11 (both sides) to aid your exam. Only answers on the exam papers will count
towards cre
Prelim 3 Content: ECE 4740 Digital VLSI Design
In short: all topics covered from Lecture 10 to Lecture 23
Static CMOS design
Fully understand complementary MOS, and the PDN and PUN design
Be able to simplify and synthesize complex static complementary MOS
Prelim 1 Content: ECE 4740 Digital VLSI Design
Basic VLSI knowledge
What is VLSI good for, where is it used, why is it used
Moores law, trends in transistor density, memory capacity, and power consumption
Advantages/disadvantages of hand layout/full-custo
ECE 474: Digital VLSI Design
Review Homework 1
Due Friday 5:00 PM, February 8th
Problem 1 (10pts): Threshold Drops
Using the switch-model rules presented in class, determine the voltages at Vx, Vy, and
Vz. Assume Ron < RBIG < Roff
VDD
VDD
|VTp|=VTn
VDD>4V