Lecture 11-12
MOS-Capacitor
Topics
MOS Capacitor in equilibrium
MOS Capacitor under bias -Capacitance -Accumulation -Depletion -Inversion
Reading Assignment Howe Chap 3,
MOS devices and by extension MOS capacitors are at the heart of the electroni
Handout 2
Overview of Semiconductors
What you will learn:
Intrinsic (pure) and extrinsic (doped) semiconductors. Carrier statistics in equilibrium and under bias. Basic differential equations to model the semiconductor devices.
Handout 2
ECE 315, Cornell
March 4, 2014
ECE3150
Homework # 3 Solutions (Rev. 0)
Spring 2014
1. Consider a MOS capacitor built with aluminum as the metal, a 50 nm thick oxide, and
an n-type semiconductor whose donor concentration is 1015 cm3 .
a) Determine the energy band diagram i
February 4, 2014
ECE 3150
Recitation - Week # 3 (Rev. 0)
Spring 2014
Concepts: Half Wave & Full Wave Rectifer
The half wave and full wave rectier circuits are illustrated schematically below in
Figure R3.1.
Figure R3.1. Schematic diagrams for the half wav
February 11, 2014
ECE 3150
Recitation - Week # 4 (Rev. 1)
Spring 2014
Concepts: pn Junction Small Signal Equivalent Circuit
Consider the following silicon pn junction diode (at 300 K) illustrated below in Figure
R4.1. The diodes cross sectional area is A
January 21, 2014
ECE 3150
Recitation - Week # 2 (Rev. 0)
Spring 2014
Concepts: Diode Models
The diode models covered in HW # 1 and Lab #1 are illustrated schematically below.
Diode Equation
Id
Piecewise Linear
Id = (Vd-VTO)/Rd (Vd > VTO)
Id = 0
(Vd < VTO)
Page1of2
ECE3150 #2 - Bipolar Junction Transistor Lab Name: Date of Lab: Lab Section: Date of Submission: Instruments: Devices Used: Other Items: npn BJT Output Curves
Spring 2010
(place npn output curves here) (remember to label base current values) (ind
ECE 3150 Homework 4
Due 2/26/2009 by 11:10 AM
1. [20 points] Text (Razavi), Problem 3.50. Turn in output waveforms for current across the load resistor, and the voltage drops across the diode and input voltages. For this problem you have to use SPICE as y
ECE 3150 Homework 3
Due 2/19/2009 by 11:10 AM
1. 2. 3. 4. 5. 6.
[10 points] Text (Razavi), Problem 3.1 [10 points] Text (Razavi), Problem 3.3 [30 points] Text (Razavi), Problem 3.9 (a,b only). You can do c,d,e for extra credit 20 points. [30 points] Text
ECE 3150 Homework 2
Due 2/12/2009 by 11:10 AM
p(x=0)=pini n-type material with ND doping
x=0
x
Lc
1. (Poisson Equation and diffusion Length) For a p-type extrinsic Si with the acceptor doping NA=21017cm-3, the minority mobility n=750cm2/Vs, the majority m
ECE 3150 Homework 2 Solution
Due 2/12/2009 by 11:10 AM 1. (Poisson Equation and diffusion Length) For a p-type extrinsic Si with the acceptor doping NA=21017cm-3, the minority mobility n=750cm2/Vs, the majority mobility p=300cm2/Vs, the minority lifetime
ECE 3150 Homework 1
Due 2/5/2009 by 10:30 AM 1. (Atomic doping) For a piece of homogeneous silicon under equilibrium at room temperature with ni=1.021010cm-3, find the electron and hole concentrations where both types of exist: NA=1018cm-3 and ND=1015cm-3
ECE 3150 Lab 4 3/26/2010
THE MOS DIFFERENTIAL PAIR
1 Objectives
In this lab, you will examine the currentvoltage characteristics of a MOS differential pair, which is widely used as an input stage in operational amplifiers and in many other types of circui
ECE 315: Lab 3 Measurement Samples
Spring 2009 Experiment 1: Input Characteristics Semilog plot showing Vin as a function of I in , similar to the one shown below, for a simple nMOS current mirror and a pMOS one. For each mirror, they should show both mea
February 4, 2014
ECE 3150
Recitation - Week # 3 (Rev. 0)
Spring 2014
Concepts: Half Wave & Full Wave Rectifer
The half wave and full wave rectier circuits are illustrated schematically below in
Figure R3.1.
Figure R3.1. Schematic diagrams for the half wav
February 18, 2014
ECE 3150
Lecture Notes - Week # 5 (Rev. 0)
Spring 2014
Concepts: Bipolar Junction Transistor: Early Eect, Injection Level Eects, Switching Time,
Base Resistance, Equivalent Circuits and Device Bandwidths
Outline
V. Bipolar Junction Trans
APril 4, 2014
ECE315
Assignment # 4 (Rev. 1)
Spring 2014
Concepts: Biasing the BJT: Load Line, Operational Modes: Cut O, Active, Saturation, Small
Signal Circuit, Early Eect
Common Emitter & Common Collector Amplier (Voltage Follower): Input/Output
Resist
April 23, 2014
ECE3150
Assignment # 5 (Rev.2)
Spring 2014
Concepts: MOS Ampliers: Common Source & Common Drain, Current Source Loads, Current
Mirror, Cascode Conguration, Single Ended Output Di. Amp.
Reading: Razavi: MOS Ampliers - Chapter 7, Cascodes and
April 25, 2014
ECE3150
Assignment # 6 (Rev. 0)
Spring 2008
Concepts: Frequency Response of Ampliers: Complete Transistor Models, Millers Theorem
Reading: Razavi: Frequency Response - Chapter 11
Lab Work: 6. Frequency Response of the CS Amp
Goals:
1. Exami
March 25, 2014
ECE315
Assignment # 4 (Rev. 0)
Spring 2014
Concepts: Biasing the BJT: Load Line, Operational Modes: Cut O, Active, Saturation, Small
Signal Circuit, Early Eect
Common Emitter & Common Collector Amplier (Voltage Follower): Input/Output
Resis
April 28, 2014
ECE 3150
Lecture Notes - Week # 15 (Rev. 1)
Spring 2014
Concepts: Frequency Response: Common Source Amplier, MOSFET High Frequency Equivalent Circuit, Millers Theorem
Outline
IX. Frequency Response - Common Source Amplier . . . . . . . . .
April 23, 2014
ECE 3150
Lecture Notes - Week # 13 & 14 (Rev. 1)
Spring 2014
Concepts: MOSFET Based Ampliers: Resister Bias Circuit, Common Source and Common
Drain Congurations, Common Gate Conguration, Input and Output
Impedances, Transfer Functions
Curre
February 15, 2014
ECE315
Assignment # 2 (Rev. 0)
Spring 2014
Concepts: Semiconductors: Bipolar Junction Transistors, npn & pnp structures, Physics of Operation, IV characteristics, biasing: forward active & saturation, small signal model,
resistor bias ci
February 15, 2014
ECE3150
Homework # 2 Solutions (Rev. 0)
Spring 2014
1. Textbook Chapter 4, Problem 4. As given in equation (4.8) in your text, the
collector current in the npn BJT is (ignoring the Early eect)
Ic =
AqDn n2
qVBE
i
exp(
)1
B
kT
NB WB
,
whe
March 13, 2014
ECE 3150
Prelim # 1
Spring 2014
This exam is closed book and closed notes. Find equations on the back of the exam. Use
calculator to get numerical answers. Show all work! Take 90 minutes.
1. (30 pts) Consider a silicon p+ n junction sample
March 7, 2014
ECE3150
Assignment # 3 (Rev. 1)
Spring 2014
Concepts: MOS Capacitors: depletion, accumulation and inversion
MOSFETs: structure and layout, gradual channel approximation, terminal characteristics, channel length modulation, large signal analy
March 27, 2014
ECE 3150
Lecture Notes - Week # 10 & 12 (Rev. 0)
Spring 2014
Concepts: BJT Based Ampliers: Resister Bias Circuit, Common Emitter and Common Collector Congurations,
Common Base Conguration,
Input and
Output Impedances, Transfer Functions, AC