January 17, 2014
ECE3150
Homework # 1 Solutions (Rev. 0)
Spring 2014
1a2.1
(a) Using the formula provided for Ge:
ni (T ) = 1.66(1015 )T 3/2 exp
Eg
2kT /q
[cm3 ] .
(1.1)
Note: equation has been altered for convenience so Eg is in units of electron volts
ECE 3150 Homework 3
Due 2/19/2009 by 11:10 AM
1. 2. 3. 4. 5. 6.
[10 points] Text (Razavi), Problem 3.1 [10 points] Text (Razavi), Problem 3.3 [30 points] Text (Razavi), Problem 3.9 (a,b only). You can do c,d,e for extra credit 20 points. [30 points] Text
January 23, 2008
ECE315
Homework # 1 Solutions (Rev. 0)
Spring 2008
1. Textbook Chapter 2, Problem 1. The intrinsic carrier concentration of Ge was given as:
ni = 1.66(1015 )T 3/2 exp Eg 2kT [cm3 ] ,
where the bandgap Eg is 0.66 eV. (a) Calcula
Lecture 11-12
MOS-Capacitor
Topics
MOS Capacitor in equilibrium
MOS Capacitor under bias -Capacitance -Accumulation -Depletion -Inversion
Reading Assignment Howe Chap 3,
MOS devices and by extension MOS capacitors are at the heart of the electroni
Handout 2
Overview of Semiconductors
What you will learn:
Intrinsic (pure) and extrinsic (doped) semiconductors. Carrier statistics in equilibrium and under bias. Basic differential equations to model the semiconductor devices.
Handout 2
ECE 315, Cornell
April 23, 2014
ECE3150
Assignment # 5 (Rev.2)
Spring 2014
Concepts: MOS Ampliers: Common Source & Common Drain, Current Source Loads, Current
Mirror, Cascode Conguration, Single Ended Output Di. Amp.
Reading: Razavi: MOS Ampliers - Chapter 7, Cascodes and
April 25, 2014
ECE3150
Assignment # 6 (Rev. 0)
Spring 2008
Concepts: Frequency Response of Ampliers: Complete Transistor Models, Millers Theorem
Reading: Razavi: Frequency Response - Chapter 11
Lab Work: 6. Frequency Response of the CS Amp
Goals:
1. Exami
Lecture 3
Electron and Hole Transport in Semiconductors
In this lecture you will learn:
How electrons and holes move in semiconductors
Thermal motion of electrons and holes
Electric current via drift
Electric current via diffusion
Semiconductor resis
Lecture 6
Biased PN Junction Diodes and Current Flow
In this lecture you will learn:
Biased PN junction diodes (forward biased and reverse biased PN diodes)
Depletion capacitance of PN junction diodes
Minority and majority carrier distributions in a bi
March 25, 2014
ECE315
Assignment # 4 (Rev. 0)
Spring 2014
Concepts: Biasing the BJT: Load Line, Operational Modes: Cut O, Active, Saturation, Small
Signal Circuit, Early Eect
Common Emitter & Common Collector Amplier (Voltage Follower): Input/Output
Resis
April 28, 2014
ECE 3150
Lecture Notes - Week # 15 (Rev. 1)
Spring 2014
Concepts: Frequency Response: Common Source Amplier, MOSFET High Frequency Equivalent Circuit, Millers Theorem
Outline
IX. Frequency Response - Common Source Amplier . . . . . . . . .
April 23, 2014
ECE 3150
Lecture Notes - Week # 13 & 14 (Rev. 1)
Spring 2014
Concepts: MOSFET Based Ampliers: Resister Bias Circuit, Common Source and Common
Drain Congurations, Common Gate Conguration, Input and Output
Impedances, Transfer Functions
Curre
February 15, 2014
ECE315
Assignment # 2 (Rev. 0)
Spring 2014
Concepts: Semiconductors: Bipolar Junction Transistors, npn & pnp structures, Physics of Operation, IV characteristics, biasing: forward active & saturation, small signal model,
resistor bias ci
February 15, 2014
ECE3150
Homework # 2 Solutions (Rev. 0)
Spring 2014
1. Textbook Chapter 4, Problem 4. As given in equation (4.8) in your text, the
collector current in the npn BJT is (ignoring the Early eect)
Ic =
AqDn n2
qVBE
i
exp(
)1
B
kT
NB WB
,
whe
March 13, 2014
ECE 3150
Prelim # 1
Spring 2014
This exam is closed book and closed notes. Find equations on the back of the exam. Use
calculator to get numerical answers. Show all work! Take 90 minutes.
1. (30 pts) Consider a silicon p+ n junction sample
March 7, 2014
ECE3150
Assignment # 3 (Rev. 1)
Spring 2014
Concepts: MOS Capacitors: depletion, accumulation and inversion
MOSFETs: structure and layout, gradual channel approximation, terminal characteristics, channel length modulation, large signal analy
March 27, 2014
ECE 3150
Lecture Notes - Week # 10 & 12 (Rev. 0)
Spring 2014
Concepts: BJT Based Ampliers: Resister Bias Circuit, Common Emitter and Common Collector Congurations,
Common Base Conguration,
Input and
Output Impedances, Transfer Functions, AC
Lecture 2
Basic Semiconductor Physics
In this lecture you will learn:
What are semiconductors?
Basic crystal structure of semiconductors
Electrons and holes in semiconductors
Intrinsic semiconductors
Extrinsic semiconductors
n-doped and p-doped semic
Lecture 4
Electrons and Holes in Semiconductors
In this lecture you will learn:
Generation-recombination in semiconductors in more detail
The basic set of equations governing the behavior of electrons and holes
in semiconductors
Shockley Equations
Qua
Department of Electrical and Computer Engineering, Cornell University
ECE 3150: Microelectronics
Spring 2017
Homework 10
Due on April 27, 2017 at 7:00 PM
Suggested Readings:
a) Lecture notes
Important Notes:
1) MAKE SURE THAT YOU INDICATE THE UNITS ASSOCI
Department of Electrical and Computer Engineering, Cornell University
ECE 3150: Microelectronics
Spring 2017
Lab 4 (Design Project)
Due on or before May 10
Lab Goals
The goal of the lab is to give you the opportunity to design and demonstrate an analog FE
Department of Electrical and Computer Engineering, Cornell University
ECE 3150: Microelectronics
Spring 2017
Exam 1
`
March 23, 2017
INSTRUCTIONS:
Every problem must be done in the separate booklet
Only work done on the exam booklets will be graded do n
Lecture 22
Circuit Design Techniques for
Wireless Communications
In this lecture you will learn:
Circuits for wireless communications
Signal multipliers and mixers
Single-balanced and double-balanced mixers
CMOS RF Oscillators
Analog to digital conve
Lecture 21
Circuit Design Techniques
In this lecture you will learn:
High frequency circuit analysis techniques
Method of open circuit time constants
Differential amplifiers designs
ECE 315 Spring 2005 Farhan Rana Cornell University
High Frequency Circ
ECE 3150 Homework 9 Solutions
9.1)
Problem 9.2: (RF Amplifier/Filter in one)
Suppose:
W L8
C gs 0.5 fF
C gd 0.1 fF
2
RS 10 k
nCox 200 A V
L 25 nH C ? pF
n .04 1 V
V DD 3.5
V BIAS 2.5
VTN 0.5 V
a) What ought to be the value of the capacitor C so that the
ECE Homework 10 Solutions
Problem 10.1:
A common-gate topology is also considered first for you reference:
For C
use the top circuit above:
gs
vt
Rs
it
a RsC gs
For C
gd
use the bottom circuit above:
v out vt
v out
g m v out vt
0
ro | roc
Rs
v out v
Department of Electrical and Computer Engineering, Cornell University
ECE 3150: Microelectronics
Spring 2017
Homework 9
Due on April 20, 2017 at 7:00 PM
Suggested Readings:
a) Lecture notes
Important Notes:
1) MAKE SURE THAT YOU INDICATE THE UNITS ASSOCIA
Department of Electrical and Computer Engineering, Cornell University
ECE 3150: Microelectronics
Spring 2017
Lab 3
Due one week after your lab day in the course Lab Dropbox
Lab Goals
1) Examine the properties of a common source/common drain cascaded FET a