ECE G201 H.W. #1, Due January 16, 2009
1. Problem 1.3, Text.
2. a) Develop a model for the allowed energy levels of the He+ ion using classical mechanics and the
Bohr postulate that the electron's angular momentum is quantized. Recall that the helium atom
EECE 7201 H.W. #1, Due January 18, 2011
1. Problem 1.3, Text.
2. a) Develop a model for the allowed energy levels of the He+ ion using classical mechanics and the
Bohr postulate that the electron's angular momentum is quantized. Recall that the helium ato
ECE G201
Homework 1 Solutions.
Problem 1. This is easy and self-checking.
Problem 2. Solution (from Prof. Hopwood)
The He+ is essentially identical to the H atom, except that the nucleus has a +2 charge.
Therefore, the attraction force between the remaini
EECE 7201, Homework #2, Due Jan. 31, 2011
1. Problem 1.7, text.
2. Problem 1.9, text.
3. Problem 1.14, text.
4. For GaAs, how many Ga atoms are in each conventional cubic unit cell? In a primitive unit cell?
For Si, how many atoms are in each conventional
EECE 7201 H.W. #8
1. 11.2, text.
2. Repeat 1 with the same wavelengths, but for silicon.
3. 11.7, text. Note that you will have to find the maximum power point by trial and error. The line is not
necessarly the correct one for maximum power.
4. 11.8, text
ECE G201 H.W. #8, Due March 31, 2009
1. (4) S3.1
2. (3) What is the required dose for the same question if the oxide thickness is 1 nm?
3. (16) S3.2
4. (20) Using the example worked in class, (to=1.5 nm, NA=3x1017, p+ gate doped at 3x1019):
a. Compare the
EECE 7201 H.W. #7, Due March 25, 2011
1. A planar silicon diode is designed as follows: p+ - n junction, with junction depth of 0.5m from the
surface of the wafer, fabricated in a 20 micron thick layer of lightly doped silicon (this layer ends 20
microns
ECE G201 H.W. #3, Due February 10, 2009
Note: Most of these problems are very quick. The last two are more challenging!
1. 1.10, text.
2. 1.11, text.
3. 1.12, text.
4. 1.21, text.
5. 2.1, text.
6. 2.4, text.
7. 2.5, text.
8. 2.6, text.
9. 2.7, text.
10. 2
EECE 7201 H.W. #3, Due February 8, 2011
Note: Many of these problems are very quick. The last two are more challenging!
1. What is the conductivity of a semiconductor (non-degenerate for those of you who know what this is)
at T=0K?
2. What is the minimum
ECE G201 H.W. #5, Due February 24, 2009
1. 4.1, text
2. 4.2, text
3. 4.5, text
4. 5.1, text.
5. 5.2, text.
6. A silicon step junction NA = 4X1018/cm3 (assume non-degenerate), ND = 1016/cm3, is at 300K.
Calculate the following in equilibrium, assuming the
1. Calculate the resistivity of a silicon sample doped with 1e17 cm3 phosphorus and 8e16 cm3 boron.
2. Calculate the resistivity of a silicon sample doped with 1e20 cm-3 phosphorus and 8e19 cm-3 boron.
3. 3.4, text.
4. 3.6, text. (include velocity saturat
ECE G201 H.W. #6, Due March 17, 2009
1. A planar silicon diode is designed as follows: p+ - n junction, with junction depth of 0.5m from the
surface of the wafer, fabricated in an 21micron thick layer of lightly doped silicon (this layer ends 21
microns f
ECE G201 H.W. #7, Due March 24, 2009
1. 11.2, text.
2. 11.7, text.
3. 11.8, text
4. In 11.8, which material makes a more efficient solar cell?
5. Explain what is happening in question 4, considering your answer to question 3.
6. 11.9, text.
7. 11.12, text