ECE344: Semiconductor
Materials and Devices:
Electronic Structure
Zlatan Aksamija
[email protected]
Electronic structure=energy bands
The free electron and the notsofree electron
The 3 principles of quantum mechanics:
Particlewave duality
Pau
ECE344 Semiconductor Materials and Devices
Homework 2: Electronic Structure
Assigned Wednesday, September 23rd, due Friday October 2nd at the beginning of class
Pierret refers to our textbook Semiconductor Device Fundamentals by Robert F. Pierret
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ECE344 Semiconductor Materials and Devices
Homework 5, assigned Friday Nov. 12th, due Monday Nov. 23rd start of lecture
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1.
2.
3.
BJT quick quiz 10.1, 10.2, 11.1 (ad only) in Pierret
Problem 10.3 in Pierret
Problem 10.5 in Pierret
In lectures, we deriv
ECE344 Semiconductor Materials and Devices
Homework 1: Crystal Structure
Assigned Monday, September 14th, due Monday September 21st at the beginning of class
0.
1.
2.
3.
4.
5.
Pierret refers to our required textbook Semiconductor Device Fundamentals by Ro
ECE344 Semiconductor Materials and Devices
Homework 4: Minority Carrier Diffusion and PN junction electrostatics
Assigned Wednesday, October 14th, due Friday October 23rd at the beginning of class
Pierret refers to our textbook Semiconductor Device Funda
Score:_
Name:_
ECE344 Semiconductor Materials and Devices Final Exam
Time: 10:30 am 12:30 pm, 12/17/15, Thursday; Location: ELab 303
1. Do only 4 out of 5 problems. Only 4 problems will be graded. If you attempt 5, circle the 4
you want graded.
2. Each p
ECE344 Semiconductor Materials and Devices
Homework 5, assigned Wed. Nov. 25th, due Friday Dec. 4th start of lecture
0.
1.
2.
3.
4.
5.
MS quick quiz 14.1 (ae only) in Pierret
Problem 14.3 in Pierret
Problem 16.6 do parts (a), (b.i) and (b.iii), skip (b.
ECE344 Semiconductor Materials and Devices
Homework 8, assigned Friday Dec. 4th, due Friday Dec. 11th start of lecture
0.
1.
2.
3.
4.
5.
MOSFET quick quiz 17.1 (ad, f and j) in Pierret
Problem 17.2 parts (a) and (b) in Pierret
Problem 17.3 in Pierret
Pro
ECE344 Semiconductor Materials and Devices
Homework 5, assigned Monday Nov. 2nd, due Monday Nov. 9th start of lecture
0. Ideal Diode quiz 6.1 in Pierret
1. A special type of diode has a very short N type region where the length L of the quasineutral regio
ECE344 Semiconductor Materials and Devices
Homework 3: Carrier Action
Assigned Monday, October 5th, due Tuesday October 13th at the beginning of class
0.
1.
Pierret refers to our textbook Semiconductor Device Fundamentals by Robert F. Pierret
Review probl
ECE344: Semiconductor
Materials and Devices:
Carrier Action
Zlatan Aksamija
[email protected]
4 Types of Carrier Action
We have discussed carrier concentrations in equilibrium
Now we wish to develop a picture of what they do in/near equilibrium
1.
ECE344: Semiconductor
Materials and Devices:
PN Junction Electrostatics
Zlatan Aksamija
[email protected]
Poissons equation
Relates charge (not carrier) density to the slope (or gradient in 3d) of the Efield
=
()
0
or in 3D
=
(,)
0
(5.2 and 5.
ECE344: Semiconductor
Materials and Devices:
Crystal Structure
Zlatan Aksamija
[email protected]
Online resources: NanoHUB.org
The NanoHUB is an excellent resource providing an online community portal
Link available on our Moodle course webpage
Welcome to ECE344:
Semiconductor Materials and
Devices
Zlatan Aksamija
[email protected]
At the dawn of time
First there were vacuum tubes
Invented in 1904 by John Ambrose Fleming
Diodes, triodes, pentodes, miniatures
Still used for extreme environ
ECE344: Semiconductor Materials
and Devices:
MetalOxideSemiconductor (MOS)
Zlatan Aksamija
[email protected]
The rest of the semestera preview
Since the midterm exam, we have covered:
PN junction diodes: deviations from the ideal diode law (Cha
ECE344: Semiconductor Materials
and Devices:
MetalOxideSemiconductor Field
Effect Transistors (MOSFETs)
Zlatan Aksamija
[email protected]
Blue Waters Student Internship Program
NSF support for undergraduate internships involving highperformance
ECE344: Semiconductor
Materials and Devices:
PN Junction IV curves
Zlatan Aksamija
[email protected]
The pn junction in equilibriumcurrents
The drift currents are both (JNdrift and JPdrift) going righttoleft
Diffusion currents (JNdiff and
ECE344: Semiconductor
Materials and Devices:
Bipolar Junction Transistors (BJTs)
Zlatan Aksamija
[email protected]
Midterm exam grade distribution
Cumulative grade distribution so far
The Bipolar Junction Transistorintroduction
In simplest terms, a
ECE344 Semiconductor Devices
Fall 2012
QUIZ3
A silicon material maintained at 300K is characterized by the following energy
band diagram:
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1,.
w  "4 ' # .Er
i=0 XL
Question 1 (10pts)
[1 pt] Is the mater
Homework 3
1. Problem. Calculate the value of the Fermi level and sketch its position in a band diagram for the following
cases:
a. Ge, ntype, ND = 1017 cm3 , T = 300 K.
b. Si, ptype, NA = 2 1018 cm3 , T = 450 K.
c. GaAs, ntype, ND = 1018 cm3 , NA = 5
Homework 4
1. Problem: Find the resistivity (in ohmcm) for a piece of Si doped with both acceptors (NA = 1019 cm3 )
and donors (ND = 1016 cm3 ). Since the electron and hole mobilities depend on the concentration of the
dopants, use the following empriric
Homework 5
1. Problem: A silicon pn junction is formed between ntype Si doped with ND = 1017 cm3 and ptype Si
doped with NA = 1016 cm3 .
(a) Sketch the energy band diagram. Label all axes and all important energy levels.
(b) Find nn0 , np0 , pp0 , and
Homework 6
1. Problem:
(a) Using the gures on pages 133 and 134 of the Lecture Notes, Part II, as a guide, sketch the band diagram
of an MOS capacitor with an ntype Si substrate in i) accumulation, ii) at at band condition, and iii) at the
onset of stron
Homework 7
1. Problem: (a) Consider an nchannel MOSFET with uniform channel doping with NA = 3 1017 cm3 and
having an oxide 10 nm thick. Calculate the subthreshold slope at 300 K.
(b) Assume now that the SiSiO2 interface is not ideal, but there are int
ECE344: Practice questions for Midterm Exam 1:
Solutions, October 13, 2009
1. Problem. a. An electron is moving with a velocity of 2 106 cm/s. Determine
the electron energy in eV, its momentum, and de Broglie wavelength in nm.
b. The de Broglie wavelength