ENEE 313
HW 1, Due Wednesday, Feb. 4, 2015
Carefully read Chapters 1 & 2 in Goldsman, and quickly read Sections 1.1, 1.2 and
Chapter 2 in the Streetman and Banerjee (S&B).
Note that the class will for the most part directly follow the Goldsman text which

ENEE 313
HW7
1. Derive the expression for the hole diffusion current density across a plane by considering
the flow of holes across it. (Note we did this for electrons in class, use a similar approach
for holes.)
Let be the mean free path of a hole.
1
The

ENEE 313
HW 7
Due Wed., April 1, 2015
Read Chapter 7 and 8.1-8.3 in my notes, and 4.1, 4.3.1-4, 4.4.1-4, 5.2
1) Derive the expression for the hole diffusion current density across a plane by
considering the flow of holes across it. (Note we did this for e

ENEE 313, Spr. 09 Quiz VIII Solution
Assume T = 300 K for all questions, such that the thermal voltage kT /q = 0.026 V.
si = 1.035 1012 F/cm. q=1.61019 C. n2i = 2.1 1020 1/cm3 . Where needed, assume
a depletion length Lp of 6.5 m=0.00065 cm.
1. Consider a

ENEE 313
HW 11
1. a) Draw two cross-sections of an N-MOSFET. Label the source, drain, gate, body, oxide,
substrate, and indicate the type of doping in each region. Draw one cross-section with zero
gate voltage, and another when gate voltage is large enoug

ENEE 313
Homework 10
Due April 22, 2015
Reading: Class notes on BJTs (Chp. 10). Please try to see that the theory of BJT
operation is an extension of the PN Junction theory. Thus, understanding the BJT
analysis will reinforce your understanding of PN junc

ENEE 313, Spr. 09 Quiz V Solution - Mar 10, 2009
1. Indicate whether the following materials, doped with the indicated acceptor and donor concentrations
(NA and ND , respectively) are n-type or p-type. For each case, give the equilibrium electron and
hole

ENEE 313
HW 6
1. Describe what is meant by average drift velocity for electrons in the presence of
an electric field as opposed to the instantaneous velocity (1/hbar)dE/dk from the
band structure. What is the average force on electrons that are drifting i

ENEE 313
HW 5
1. About Band Structure of Solid Crystals
a. Consider two atoms far apart. The outermost electrons in these two atoms do not
interact (wave functions do not intersect). As they are brought closer, the valence
electrons feel the forces of adj

ENEE 313 Exam 1, Sample Questions
Part I: Schrodinger Wave Equation (SWE)
1. Assuming the potential is time independent, use separation of variables to transform
the time and space dependent Schrodinger equation in rectangular coordinates into two
equatio

ENEE 313
HW 4, Due Wed. Feb. 25, 2015
Read Chp. 2.3, 2.4, 2.5 S&B, and Chp. 4 in Goldsman.
1) A new kind of digital electronics is being developed. In this new technology, an electron is
trapped in a 2-dimensional potential energy well and the different q

ENEE 313, Spr. 09 Midterm II Preparation
1. Be able to solve the quizzes and homework problems.
2. Make sure you retain a general knowledge of what we covered in the earlier part on the class,
especially in Chapter 3.
3. From the book, read:
(a) Chapter 4

ENEE 313, Spr. 09 Midterm I Preparation
1. Be able to solve the quizzes and homework problems.
2. From the book, read:
(a) Chapter 1, Sect. 1.1 and 1.2
(b) Chapter 2, all sections
(c) Chapter 3, all sections except 3.1.5, 3.4.5
(d) Chapter 4, sections 4.1

ENEE 313
HW 6, Due , March 23, 2015
Read Chapter 6 in the Class Notes, and sections 3.4.1, 3.4.2, 4.4.1-4.4.4 in S&B.
1) Describe what is meant by average drift velocity for electrons in the presence of an electric field
as opposed to the instantaneous ve

ENEE 313, Homework 11
Due May 6, 2015
Reading: Carefully read Goldsman Text Notes. Also, it is very important to attend
class for the MOSFET lectures. Do NOT just rely on the Goldsman Text notes that
I have provided.
1. a) Draw two cross-sections of an N-

ENEE 313, Spr. 08 Quiz I Solution - Feb 4, 2008
1. (1 pts.) Identify the 3-D lattice in the figure below.
Body-centered cubic (BCC).
2. (4 pts.) Give the Miller indices of the plane that includes the points A, B, G, H and P. (Hint: The
coordinate system i

ENEE 313, Spr. 09 Quiz IV - Mar 4, 2009
Name:
1. The Fermi-Dirac distribution function is given by the expression
f (E) =
1
F
1 + exp ( EE
kT )
where k is the Boltzmann constant, T is the temperature in degrees Kelvin, EF is the Fermi level
energy. f (E)

ENEE 313, Spr. 09 Quiz V - Mar 10, 2009
Name:
1. Indicate whether the following materials, doped with the indicated acceptor and donor concentrations
(NA and ND , respectively) are n-type or p-type. For each case, give the equilibrium electron and
hole co

ENEE 313
HW 10
1. Sketch and label the cross-sections of an NPN and a PNP BJT
NPN BJT in Forward active mode
PNP BJT in Forward active mode
2. Describe in your own words how a BJT operates in forward active mode. Use words
that include drift, diffusion, b

ENEE 313 Spring 2017
Discussion 7
March 16, 2017
1. Space-charge Limited Current
In lightly-doped semiconductors under bias voltage, electrons can be injected at densities
larger than the thermal equilibrium value. Under this condition, a space-charge eff

ENEE 313 Spring 2017
Discussion 5
February 23, 2017
1. Pierret 2.6
(a) Under equilibrium condition and > 0K, what is the probability of an electron state
being occupied if it is located at the Fermi level?
For = ,
( ) =
1
1 + ( )
=
1
2
(b) If is positione

ENEE 313 Spring 2017
Discussion 10
April 13, 2017
1. Interpretation of energy-band diagrams
The energy-band diagram of an inhomogenously doped piece of Si is shown below. The
intrinsic carrier density of Si is = 1.5 1010 cm3 and its band gap is = 1.11 eV.

ENEE 313 Spring 2017
Discussion 6
March 9, 2017
1. Streetman 3.19:
Sketch and label the simplified band diagram of a semiconductor with a bandgap of
1.5 eV subjected to the following: From = 0 to 2 m the voltage is constant. From
= 2 m to 4 m, there is a

ENEE 313 Spring 2017
Discussion 4
February 16, 2017
1. Atomic energy level transitions
An electron in the helium atom ( = 2) is in an excited state with a binding energy (this
is the energy required to remove an electron from the helium atom) of 3.4 eV. I

ENEE 313 Spring 2017
Discussion 9
April 6, 2017
1. Currents in semiconductors
A semiconductor bar of length 2 m with intrinsic carrier concentration of 1013 cm3 is
uniformly doped with donors at a concentration of 2 1013 cm3 and acceptors at a
concentrati

ENEE 313 Spring 2017 February 9, 2017
Discussion 3
I . Streetman 2.7
A particle is described in l-D by a wavefunction:
l(x) = 32" forx 2 0 and C eH" for x < 0, and B and C are real constants. Calculate
B and C to make l1(x) a valid wavemction.
For P(x) to

ENEE 313 Spring 2017
Discussion 7
March 16, 2017
1. Pierret 3.13
The non-uniform doping in the central region of bipolar junction transistors (BJTs)
creates a built-in electric field that assists minority carriers across the region and
increases the maxim

ENEE 313 Spring 2017
Discussion 2
February 1, 2017
1. Streetman 1.4
Sketch a bcc unit cell with a monoatomic basis. If the atomic density is 1.6 1022 cm3 ,
calculate the lattice constant. What is the atomic density per unit area on the (110)
plane? What i

ENEE 313 Spring 2017
Discussion 10
April 13, 2017
1. Streetman 5.11:
In a p-n junction, the n-side doping is five times the p-side doping. The intrinsic carrier
concentration = 1011 cm3 and band gap is 2 eV at 100. If the built-in junction
potential is 0.

Homework #2 ENEE 611 Spring 2017
5V
5V
Problem 1 - (2 pts) nFET
Given the nFET circuit on the right, justify your choice of operating mode
(saturation or triode) and find the value of the drain current. Ignore the Early effect
ID
100K
( = 0) and the body