HOMEWORK 3: Logic gates
Dr. Amin Abd El-Wahab
1.
Q2
Q3
NOT A
(d) NOT B
Q4)
Simplify the following Boolean expression
F(A,B,C,D)=ABC+A'B'C'D'+ABCD'+AB C'
Date : 25-10-2014
ThethresholdVoltageofadiodeistheminimumforward(cathodeto+anode)Voltagevalueacrossthe
terminalsofadiodeatwhichthediodewillstarttoconductcurrent.ThethresholdVoltageis
approximately.2Vforgermaniumdiodesandapproximately.7Vforsiliconediodes.AnyappliedVoltage
w
What do you mean by potential
barrier for pn junction?
Potentialbarrieristheobstaclecreatedbythedepletionlayerwhichpreventsmajority
chargecarriersfromflowingacrossthepnjunctionfreely
HOMEWORK 4 Logic gates
Q1
Dr. Amin Abd El-Wahab
Using only Boolean algebra, simplify the following expressions
f(a,b,c,d) = m(3,6,8,12,14,15). Express your answer in Sum of
Products.
ii
h(a,b,c,d) = m(0,1,2,4,5,7,9,10,11,13). Express your answer in
Produc
pn junction
From Wikipedia, the free encyclopedia
This article needs additional citations for verification. Please help improve
this article by adding citations to reliable sources. Unsourced material may
be challenged and removed. (November 2013)
A pn ju
Types of Semiconductors
Semiconductors are mainly classified into two categories: Intrinsic and
Extrinsic.
Intrinsic Semiconductor
An intrinsic semiconductor material is chemically very pure and possesses poor
conductivity. It has equal numbers of negativ
Explain the formation of depletion
layer in pn junction diode?
hey dear, in p-n junction p-type material has more positive charged called
holes and n-side having e-in majority. when we apply negative biasing then
negative terminal is connected to p termin
Effect of temperature on diode
characteristics
Temperature affects every semiconductor device you can think of, and diodes
are no exception. Temperature can have considerable effect on the characteristics
of diode. The goal of this section is to understan
EEM870 Embedded System and
Experiment
Lecture 1: SoC Design Overview
Wen-Yen Lin, Ph.D.
Department of Electrical Engineering
Chang Gung University
Email: wylin@mail.cgu.edu.tw
Feb. 2013
Course Overview about SoC Part
You may find similar contents if you
h
Design & Co-design of
Embedded Systems
Embedded Computing
Maziar Goudarzi
Today Program
Introduction to Embedded Systems
What are embedded systems?
Challenges in embedded computing
system design.
Design methodology.
Copyright
CopyrightNote:
Note:
Main
172
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
The above expression can be a good example for mathematical basis for an initialization function for systems of this type with constant current charging. These
equations a
164
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
The describing relations are
!
#
c1 0 "
c Dt vi (t) v (t) ,
l1
$
l1
1 (t).
where initialization (vi v , 0, a, c, t) =
c1
$
l2 0
v (t) vo (t) =
c D i f (t),
c2 t
!
c2
where
182
9 Application of Generalized Fractional Calculus in Other Science and Engineering Fields
(similar equation for lossy semi-infinite transmission line and heat flux studies)
Some interesting points are listed below:
(1) m(t) is characteristic intermedia
174
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
of p = s q . Then standard pole-zero analysis is done. This analysis includes root
finding, partial fractions, root-locus compensation, etc. This is conformal transformati
9.6 Feedback Control System
193
The transfer characteristic equation in the state-space format is discretized using
the definition of GrunwaldLetnikov (GL) differintegral. For the state variables,
()
()
()
= Dt
x 2 (t), GL expansion is
fractional derivati
166
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
r 1/2
vo (t) =
vi (t),
c Dt
R
where (vi , t, 1/2, a, c, t) = R(i f , 1/2, a, c, t) = r R 1 (t).
Alluding
to Fig. 8.1, the input element and output element impedances are
9.7 Viscoelasticity (StressStrain)
201
Consider a unit step load is applied from t = 0 and t = d on a new specimen
(un-initialized). (t) = [H (t) H (t d)], H is Heaviside step unity function
and is the magnitude. Then:
(t) =
K (v)
=
K (v)
!t
0
(t )v1 [H (
176
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
Robotnov-Hartley function, Miller-Ross function, etc. are the basis, and appears in
solutions (Fig. 8.15).
8.4.1 Observations
The tracking of the filter performance with v
9.6 Feedback Control System
195
During Start-Up Operation of nuclear plants, while negative feedback
stabilizing factors are absent, is a risky affair. Risk factor is more for experimental
research reactor, where reactor cores are configurable with severa
8.3 Battery Dynamics
173
From charging analysis of equation V1 (s) V3 (s) and with
Ic (s) = I RL (s) = cfw_V3 (s) V1 (s) /R L
and taking a = 0, c = 1
V1 (s) V3 (s) =
!
" 1/2
#
R L s s B + R1
"
#
3/2
R
1
R L s B + 1+ RL s+ C1B s 1/2 + RC
$!
v12 (1)
s
W (v2
200
9 Application of Generalized Fractional Calculus in Other Science and Engineering Fields
time varying initialization vector, the gains of fractional state feedback and gains of
observer were calculated. In the example, coefficient equalization scheme
Chapter 9
Application of Generalized Fractional Calculus
in Other Science and Engineering Fields
9.1 Introduction
In this chapter, a series of scientific and engineering application is shown, where the
fractional calculus is finding application. We start
180
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
. All these poles are to the left of the instability wedge in w-plane. The two poles
exp(+ j /3) and exp( j /3) in the right half of the w-plane correspond to poles
at s =
162
8 Application of Generalized Fractional Calculus in Electrical Circuit Analysis
Putting i i (t) = i f (t) = 0 and v (t) = 0, we have
!
d
(vi (t) vi() (c)
vo (t) = Ri f (t) = RC
dt
"
In generalized calculus terms for t > c, we get vo (t) = RC c Dt1 vi
8.3 Battery Dynamics
169
W
W
c
v1
v3
v2
v1
v3
c
iw
v2
iw
ic
ic
R
R2
iR
R
iR
iRL
Ic
a=0
b
c
t
Fig. 8.13 Battery charging, discharging circuit, and charging current profile
1
I (s)
Cs c
V1 (s) V2 (s) =
+
v12 (0)
s
V2 (s) V3 (s) =
I R (s)R
Ic (s) = I R (s) +
184
9 Application of Generalized Fractional Calculus in Other Science and Engineering Fields
9.4 Capacitor Theory
Capacitor is a charge storage devise and it is assumed that whatever charges are
pumped they are held between the plates (electrodes) by idea