Department of Electrical Engineering
University of Minnesota
General Information
EE3115
Fall 2012
Instructional Staff:
Name:
Office:
Phone:
Email:
Office Hrs:
Lecture
W.P. Robbins
KHKH 5-123
625-8014
[email protected]
TTh 1-2
Discussion
W 1:25-2:15
W 2:
EE 3161 Spring 2014
Midterm Exam Question 1
1) Silicon at room temperature (kT=0.0257 eV) is doped with a donor at a concentration of 1016 cm3.
Assume it is at equilibrium.
a) What is the concentration of holes (cm'3) in the valence band? (10 pts)
b) Wha
13133 161 Spring 2014 Quiz #2
Willem
[DiL219: is 7A. "a ire/axon L71 cfw_xi-Er)
A silicon wafer is doped with acceptors NA=10/cm and has a minority carrier lifetime
tn=1us (the minority carriers are electrons). The wafer is uniformly illuminated
throughou
EE3161 Spring 2014 Quiz #1
Name SaKUL-qim
[D#
A piece of single crystal silicon is uniformly doped such that its F enni level is 250 meV
(0.25 eV) below the conduction band minimum. Room temperature and thermal
equilibrium conditions exist throughout the
EE 3161 Spring 2014
Quiz #3 30 Minutes
1) In pn junction at equilibrium, the net electron and the net hole current is zero everywhere. Under
forward bias is the current dominated by carriers that drift or diffuse across the junction. Justify your
answer i
EE 3161
Semiconductor Devices
Professor Steven Koester
Lecture #11
Solar Cells
Outline
To be covered in this lecture:
Solar cells
General introduction
I-V characteristics
Solar Cells
Potential effects of fossil fuel consumption:
The amount of atmosph
EE 3161
Solar Cells
Part 2
Professor Steven Koester
Solar Cells
I-V characteristics:
light
p
n
I
RL
(
)
I = I 0 e qV / kT 1 I sc
A solar cell is simply a pn junction that is illuminated and
connected to a load resistance,
I-V characteristic are the sam
EE 3161 Semiconductor Devices Spring 2014 | Homework #1 Solution
Problem 1.4
Problem 1.11
Problem 1.13
1
EE 3161 Semiconductor Devices Spring 2014 | Homework #1 Solution
Problem 2.5
2
EE 3161 Semiconductor Devices
EE 3161 Semiconductor Devices Spring 2014 | Homework #3 Solution
Problem 3.11
Problem 3.12
1
EE 3161 Semiconductor Devices Spring 2014 | Homework #3 Solution
2
EE 3161 Semiconductor Devices Spring 2014 | Homework #3 Solution
3
EE 3161 Semiconductor Device
EE3161 Spring 2014 Homework
Assignment #3, Due Thursday, Feb. 20, in class:
From Pierret: 3.11*, 3.12, 3.13*, 3.23
* You may have to go back a work the appropriate chapter 2 problem
* You do not need to understand the background information about bipolar
Recitation 11
EE 3161 Spring 2008 1) For the MOS transistor drawn below, assume that the gate voltage is biased for inversion, and the labeled regions correspond to the inversion channel. What are the scattering mechanisms that affect region I? What are t
Recitation 10
EE 3161 Spring 2008 1) For the MOS capacitor shown below, a) Qualitatively show how the band diagram at threshold changes if the substrate doping is changed from Na = 1016 cm-3 to Na = 1017 cm-3. b) What is the electric field across the oxid
Recitation 2
EE 3161 Spring 2008 1) A block of GaAs at room temperature is doped with beryllium with a concentration of Na = 21017 cm-3. What concentration of silicon must be added to the GaAs to make the material degenerate? (Assume that the silicon impu
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #3
Due in class (or via Moodle) by 12:30pm Thursday October 6th, 2016
Problem 1 Pierret problem 5.3
Problem 2
Consider a silicon PN junction doped with 1016 cm-3 do
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #5
Due in class (or via Moodle) by 12:30pm Thursday October 27th, 2016
Problem 1
Consider a Si p+n solar cell at T = 300K with the parameters below. Assume that the
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #4
Due in class (or via Moodle) by 12:30pm Thursday October 20th, 2016
Problem 1
An ideal silicon diode has 1016 cm-3 boron atoms on one side and 5 x 1016 cm-3 phos
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #1
Due in class Thursday September 22nd, 2016
Problem 1
Pierret problem 1.10
Problem 2
The density of states of a semiconductor are given as follows:
,
,
" = = an