Department of Electrical Engineering
University of Minnesota
General Information
EE3115
Fall 2012
Instructional Staff:
Name:
Office:
Phone:
Email:
Office Hrs:
Lecture
W.P. Robbins
KHKH 5-123
625-8014
robbins@ece.umn.edu
TTh 1-2
Discussion
W 1:25-2:15
W 2:
Recitation 9
EE 3161 Spring 2008 1) For the silicon pnp bipolar transistor shown below, what are T and if we include base recombination? If VEB = 0, at what VCB does the transistor reach a punchthrough condition (base region fully depleted)? How does this
Recitation 10
EE 3161 Spring 2008 1) For the MOS capacitor shown below, a) Qualitatively show how the band diagram at threshold changes if the substrate doping is changed from Na = 1016 cm-3 to Na = 1017 cm-3. b) What is the electric field across the oxid
Recitation 11
EE 3161 Spring 2008 1) For the MOS transistor drawn below, assume that the gate voltage is biased for inversion, and the labeled regions correspond to the inversion channel. What are the scattering mechanisms that affect region I? What are t
Recitation 8
EE 3161 Spring 2008 1) In the following two diagrams, are the BJTs shown biased in Forward Active, Inverse Active, Saturation, or Cutoff? Sketch your own plot of log(n,p) vs. x for the case of an npn transistor in saturation.
2) For the silic
Recitation 7
EE 3161 Spring 2008 1) Consider the real diodes below.
a) Which will have the highest small signal capacitance for Va = -5V? b) In some cases, a reverse biased diode can be modeled by the circuit diagram shown below. What is the current I for
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #2
Due in class (or via Moodle) by 12:30pm Thursday September 29th, 2016
Problem 1
(a) For an electron mobility of 650 cm2/Vsec, calculate the time between collisio
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #1
Due in class Thursday September 22nd, 2016
Problem 1
Pierret problem 1.10
Problem 2
The density of states of a semiconductor are given as follows:
,
,
" = = an
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #4
Due in class (or via Moodle) by 12:30pm Thursday October 20th, 2016
Problem 1
An ideal silicon diode has 1016 cm-3 boron atoms on one side and 5 x 1016 cm-3 phos
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #5
Due in class (or via Moodle) by 12:30pm Thursday October 27th, 2016
Problem 1
Consider a Si p+n solar cell at T = 300K with the parameters below. Assume that the
Department of Electrical and Computer Engineering
EE 3161 Fall 2016
Prof. Swisher
Homework #3
Due in class (or via Moodle) by 12:30pm Thursday October 6th, 2016
Problem 1 Pierret problem 5.3
Problem 2
Consider a silicon PN junction doped with 1016 cm-3 do
Recitation 2
EE 3161 Spring 2008 1) A block of GaAs at room temperature is doped with beryllium with a concentration of Na = 21017 cm-3. What concentration of silicon must be added to the GaAs to make the material degenerate? (Assume that the silicon impu
Recitation 3
EE 3161 Spring 2008 1) For a germanium crystal at room temperature what is the position of the intrinsic Fermi level? Intuitively, why is it closer to Ev or Ec? (Germanium data is on pages 32 and 34 of Pierret).
2) For the diffused resistor b