Faculteit Ingenieurswetenschappen
Formules Mechanica
Egon Geerardyn
revisie 0.6 (21 juni 2007)
Informatica
revisie 0.6
pagina 1
Voorwoord
Deze uitgave is geen officile uitgave van de Vrije Universiteit Brussel, slechts een formularium gemaakt
door een stu
of positive photoresists
Optical density and contrast of
S.
S. V.
V. Babu
Babu and
and V.
V. Srinivasan
of Chemical Engineering,
Department of
13676
NY 13676
Potsdam, NY
Clarkson
Clarkson University,
University, Potsdam,
Abstract
the interdependence of th
4.
SEMICONDUCTOR DEVICES II
PREVIOUS LECTURE
Introduced some basic semiconductor devices.
pn junction
Formed by combining p-type and n-type doped
semiconductors.
Ec
EF
Ev
n-type
p-type
Considered effect of applying external bias Vext.
rectifying I-V behav
Exam Sample 1
1. Semiconductor doped with more acceptors than donors will be p-type
2. The steady-state response of an accurate sensor has small difference between the average output
and the true value of the measurand
3. Electrostatic actuators based on
Michael Stieven
Martin Galaz
AME 489 MEMS Fabrication
Photolithography Lab Report
10/27/2016
Background
Photolithography is the process of transferring geometric shapes on a mask to
the surface of a silicon wafer. These are transferred to a photoresist, w
AME/ABE 489A/589A, Midterm #1
Student Name:
Please circle the correct answer(s):
Q.1 (4 pt) Semiconductor doped with more acceptors than donors will be
(1) p-type
(2) n-type
(3) None of above
Q.2 (4 pt) The steady-state response of an accurate sensor has
1
Fabrication Techniques for
Micro- and Nanodevices
Eniko T. Enikov
University or Arizona
Eniko T. Enikov
Welcome
Course Website
Login on www.D2L.arizona.edu
with your NetID. You should see a link to
AME/ABE 489/589.
Teaching Assistants: TBA
Eniko T. En
1
Week 2: Working Principles of
MEMS
Eniko T. Enikov
Transducers
Transducers convert information from one
form of energy to another. Depending on
the form of the output energy, the
transducers are classified as sensors (the
output is electrical signal) o
1
Week 5/6: Doping via Diffusion and
Ion Implantation
Eniko T. Enikov
Learning Objectives
To learn how to design and fabricate (piezo) resistors in
Si.
To learn the two basic methods used in IC
manufacturing for doping Si
-diffusion based
-ion implantat
1
Week 8: Vacuum Deposition
Eniko T. Enikov
Learning Objectives
Review kinetic theory of gases and to understand the
basic physics behind evaporation.
To be able to predict the evaporation rate (flux) from various
metals.
To be able to predict the deposi
Week5:DopingviaIonImplantation
EnikoT.Enikov
1
IonImplantationConcepts
EnikoT.Enikov
2
IonImplantationConcepts
I(t)
Ei
Mask
S1
Nuclear
Scattering
Electronic
Scattering
Rp
S2
S3
Ef
Displaced
Target
Atom
Sn
Rp
x
Target
EnikoT.Enikov
Stop Distribution
Collis
AME/ABE 489/589, Midterm #1
Student Name: SAMPLE EXAM
Please circle the correct answer(s):
Q.1 Semiconductor doped with more acceptors than donors will be
(1) p-type
(2) n-type
(3) None of above
Q.2 The steady-state response of an accurate sensor has
(1)