Consider an n-type silicon Schottky diode with a barrier height of 0.65V.
d) If tunneling occurs when the barrier width is 10nm for an applied voltage of 4.35V, what is the maximum doping density for which tunneling just does not
A semiconductor device made of silicon has, under thermal equilibrium, an M-shaped electric
field distribution as shown in the figure below.
Find Nd - Na between x = -a and x = a, as a function of Emax
Consider a crystal constructed of a simple cubic lattice with one atom at each lattice point.
Assume that the atoms can be modeled as rigid spheres that touch their nearest neighbors.
a) Find the size of the largest sphere simulating a interst
For silicon, germanium and gallium arsenide, calculate from the effective mass for
density of states calculations (Appendix 3) the effective densities of states in the
conduction and valence band, and from those calculate the intrinsic carrier
Consider a silicon wafer, which is doped uniformly with 1017 cm-3 phosphorous atoms and 5 x
1016 cm-3 boron atoms. Calculate the following using numerical techniques:
1. The electron density versus temperature
2. The Fermi energy versus temper
For a silicon Schottky diode with B = 1 V and Nd = 1018 cm-3, calculate:
a) The built-in potential, depletion layer width and the maximum electric field in
b) The barrier lowering in thermal equilibrium.
c) The change in th
Consider an Ohmic contact whose geometry is defined in Figure 3.5.1 of the on-line text. The
metal-semiconductor contact resistivity is 10-6 -cm2 and the sheet resistance of the thin
semiconductor layer is 10 .
a) What is the contact resistanc