Final Exam
EEE 352Fall 2008
Solutions
1.
An n-channel MOSFET has an oxide thickness of 1.0 nm, oxide dielectric constant
of 3.9, W = 4 m, e =350 cm2/Vs, Lg = 25 nm, and an effective threshold voltage
of 0.2 V. Calculate the saturation current. Assume VGS
EEE 352 Fall 2008
Test 3 Solutions
1.
Consider an n-channel silicon JFET with the following parameters: Na = 5 1017
cm-3, Nd = 5 1016 cm-3, and a = 0.4 m. (a) Calculate the internal pinchoff
voltage. (b) Determine the gate voltage required such that the u
EEE350: Final Exam
Spring 2003
Examination Date: May 14th
Examination Time: 7:409:30am
Student Name:
Student ID:
1. This exam consists of six problems (Problem 6 is a bonus problem). You
need to provide the necessary details in order to get credits.
2. Th
EEE 352 Fall 2007 Test 2 Solutions
October 31, 2007 1. A Si p-n junction is measured to have a built-in potential of 0.9 V and a junction depletion width of 0.1 m. What are ND and NA in the n- and p-type regions, respectively? The n-type region has
MAT 275
MATLAB LAB 1 NAME: Naazaneen Maududi
LAB DAY and TIME: Monday,9:00a.m
Instructor: Dr. Ahn
Exercise 1:
t = [0;pi/4;pi/2;3*pi/4;5*pi/4]; % values of theta
r = 2; % compute the row vectors x and y
x = r*cos(t); % coordinates of the point, with r bein
EEE 352 Spring 2010
Test 2 Solutions
April 2, 2010
1.
A Si p-n junction at 300 K is measured to have a built-in potential of 0.75 V and ND
= 3 1017 cm-3. What are NA and the junction width? What is the capacitance per
unit area?
Vbi =
kB T N A N D
ln
e n
EEE 352Fall 2010
Final Exam
1.
Consider a potential tunneling barrier, whose height is 0.8 eV and thickness is 2.0
nm. If the incident wave energy is 0.42 eV, and the effective mass 0.01m0, what is
the transmission coefficient?
Here, we can compute as
2 m
Page 1 of 1
Arizona State University
Unofficial Transcript
Name:
Naazaneen Maududi
Student ID: 1206282892
_
Print Date:
Cum GPA:
3.22
Cum Totals
32.000
37.000
102.997
06/03/2014
Academic Standing: Good Standing
Transfer Credits
A maximum of 64 transfer se
EEE 352 Solutions
Test 3December 1, 2010
1.
Consider an n-Al0.3Ga0.7As-intrinsic GaAs abrupt heterojunction. Assume that the
AlGaAs is uniformly doped to Nd = 2 1018 cm-3. The Schottky barrier height is
0.8 V and the heterojunction conduction band edge di
Probability and Stochastic Processes
A Friendly Introduction for Electrical and Computer Engineers
Second Edition
Quiz Solutions
Roy D. Yates and David J. Goodman May 22, 2004
The M ATLAB section quizzes at the end of each chapter use programs available
EEE 352
HW 4
Due September 9, 2015
1. Read Chapter 2 of Quantum Dragons through page 42.
2. Compute the integral in Equation 2.16 in Quantum Dragons to arrive at Equation 2.17:
=
. Hint: Follow our integration in class and note the definition of the Gamm
EEE 352Fall 2008
Homework 9
13.2
Consider the n-channel JFET in Figure 13.32. The p-type substrate is connected
to the n-type source terminal. Sketch the space charge regions for various VGS
values when VDS = 0 and for various VDS values when VGS = 0.
The
EEE 352
HW 9
Due September 30, 2015
1. We ended class with an expression for the transmission coefficient T of an electron with
energy E approaching a barrier of energetic height U0 and physical width a:
with
16
1
=
2
(Note that this approximate expressi
EEE 352 Spring 2008 Test 1
February 20, 2008 1. A particular quantum system is characterized by a wave function with the following form:
( x) = Axe -x
for x 0. The wave function is zero for x < 0. Determine A, <x>, <x2>, <p>, <p2>, and xp. You ma
EEE 352Fall 2009
Final Exam
1.
Consider a potential tunneling barrier, whose height is 0.5 eV and thickness is 1.0
nm. If the incident wave energy is 0.22 eV, and the effective mass 0.01m0, what is
the transmission coefficient?
The tunneling coefficient i
Name_
EEE 352 Fall 2006
Final ExamSolutions
December 11, 2006
On this day: in 1941, Germany declared war on the US and spare tires for cars were
outlawed; in 1961, the first helicopter forces landed in South Viet Nam; in 1969, the
paratroopers departed So
University of Arkansas at little
Rock
Department of Systems Engineering
SYEN 3314 Probability and Random Signals
Summer 2009
Quiz 2
Monday, June 15, 2009
This is a closed book Quiz.
Calculators are not allowed.
The quiz has 3 questions to be answered i
5.3
EEE 352 Fall 2009 Homework 7 (a) A silicon semiconductor is in the shape of a rectangular bar with a cross sectional area of 100 m2, a length of 0.1 cm, and is doped with 5 X 1016 cm3 arsenic atoms. The
Page 1 of 1
Arizona State University
Unofficial Transcript
Name:
Naazaneen Maududi
Student ID: 1206282892
_
Print Date:
Cum GPA:
3.20
Cum Totals
20.000
25.000
63.998
05/13/2014
2014 Fall
Transfer Credits
A maximum of 64 transfer semester hours accepted as
EEE 352
HW 6
Due September 16, 2015
1. A laser beam of total power 1 mW and wavelength 365 nm is incident on a clean piece of
metal in vacuum. The metal has a work function of 3.0 eV. Find the maximum possible number
of photoelectrons that could be emitte
EEE 352Fall 2010
Homework 11
13.3
A p-channel Si JFET at T=300 K has doping concentrations of Nd = 5 1018 cm-3
and Na = 3 1016 cm-3. The channel thickness dimension is a = 0.5 m. (a)
Compute the internal pinchoff voltage Vp0 and the pinchoff voltage Vp. (
EEE 352Fall 2008
Homework 11
10.3
The parameters in the base region of an npn bipolar transistor are Dn = 20 cm2/s,
nB0 = 104 cm-3, xB = 1 m, and ABE = 10-4 cm2. (a) Comparing eqns. (10.1) and
(10.2), calculate the magnitude of IS. (b) Determine the colle
EEE 352
HW 3
Due September 2, 2015
1. Your house is likely wired with 12 gauge copper wiring. Consider a typical wire that has a
distance from the electrical panel to an outlet or switch of 40 ft. What is the resistance of the
wire?
2. In class, we wrote
EEE 352Fall 2009 Homework 1 1.1 Determine the number of atoms per unit cell in a (a) face-centered cubic, (b) body-centered cubic, and (c) diamond lattice. (a) The body centered cubic has 8 corner atoms, each of which is shared among 8 unit cells, so this
7
Dielectric Material
In previous chapters, we discussed an assortment of materials with varying
dielectric constants. What gives these materials these particular properties? Why does
one material have a dielectric constant of 4 and another 16? While we c
EEE 352Fall 2010
Homework 13
14.26 If the photon output of a laser diode is equal to the bandgap energy, find the
wavelength separation between adjacent modes in a GaAs laser with L = 75 m.
Here, we use the results of Prob. 14.25 with
"=
c
f #s
=
hc
E G #