EEE350: Final Exam
Spring 2003
Examination Date: May 14th
Examination Time: 7:409:30am
Student Name:
Student ID:
1. This exam consists of six problems (Problem 6 is a bonus problem). You
need to provide the necessary details in order to get credits.
2. Th
EEE 352Fall 2010
Final Exam
1.
Consider a potential tunneling barrier, whose height is 0.8 eV and thickness is 2.0
nm. If the incident wave energy is 0.42 eV, and the effective mass 0.01m0, what is
the transmission coefficient?
Here, we can compute as
2 m
EEE 352 Fall 2007 Test 2 Solutions
October 31, 2007 1. A Si p-n junction is measured to have a built-in potential of 0.9 V and a junction depletion width of 0.1 m. What are ND and NA in the n- and p-type regions, respectively? The n-type region has
EEE 352Fall 2009
Final Exam
1.
Consider a potential tunneling barrier, whose height is 0.5 eV and thickness is 1.0
nm. If the incident wave energy is 0.22 eV, and the effective mass 0.01m0, what is
the transmission coefficient?
The tunneling coefficient i
EEE 352Fall 2010
Homework 11
13.3
A p-channel Si JFET at T=300 K has doping concentrations of Nd = 5 1018 cm-3
and Na = 3 1016 cm-3. The channel thickness dimension is a = 0.5 m. (a)
Compute the internal pinchoff voltage Vp0 and the pinchoff voltage Vp. (
University of Arkansas at little
Rock
Department of Systems Engineering
SYEN 3314 Probability and Random Signals
Summer 2009
Quiz 2
Monday, June 15, 2009
This is a closed book Quiz.
Calculators are not allowed.
The quiz has 3 questions to be answered i
Name_
EEE 352 Fall 2006
Final ExamSolutions
December 11, 2006
On this day: in 1941, Germany declared war on the US and spare tires for cars were
outlawed; in 1961, the first helicopter forces landed in South Viet Nam; in 1969, the
paratroopers departed So
EEE 352Fall 2008
Homework 11
10.3
The parameters in the base region of an npn bipolar transistor are Dn = 20 cm2/s,
nB0 = 104 cm-3, xB = 1 m, and ABE = 10-4 cm2. (a) Comparing eqns. (10.1) and
(10.2), calculate the magnitude of IS. (b) Determine the colle
MAT 275
MATLAB LAB 1 NAME: Naazaneen Maududi
LAB DAY and TIME: Monday,9:00a.m
Instructor: Dr. Ahn
Exercise 1:
t = [0;pi/4;pi/2;3*pi/4;5*pi/4]; % values of theta
r = 2; % compute the row vectors x and y
x = r*cos(t); % coordinates of the point, with r bein
EEE 352 Spring 2008 Test 1
February 20, 2008 1. A particular quantum system is characterized by a wave function with the following form:
( x) = Axe -x
for x 0. The wave function is zero for x < 0. Determine A, <x>, <x2>, <p>, <p2>, and xp. You ma
EEE 352Fall 2009 Homework 1 1.1 Determine the number of atoms per unit cell in a (a) face-centered cubic, (b) body-centered cubic, and (c) diamond lattice. (a) The body centered cubic has 8 corner atoms, each of which is shared among 8 unit cells, so this
EEE 352 Solutions
Test 3December 1, 2010
1.
Consider an n-Al0.3Ga0.7As-intrinsic GaAs abrupt heterojunction. Assume that the
AlGaAs is uniformly doped to Nd = 2 1018 cm-3. The Schottky barrier height is
0.8 V and the heterojunction conduction band edge di
EEE 352 Spring 2010
Test 2 Solutions
April 2, 2010
1.
A Si p-n junction at 300 K is measured to have a built-in potential of 0.75 V and ND
= 3 1017 cm-3. What are NA and the junction width? What is the capacitance per
unit area?
Vbi =
kB T N A N D
ln
e n
7
Dielectric Material
In previous chapters, we discussed an assortment of materials with varying
dielectric constants. What gives these materials these particular properties? Why does
one material have a dielectric constant of 4 and another 16? While we c
EEE 352Fall 2010
Homework 13
14.26 If the photon output of a laser diode is equal to the bandgap energy, find the
wavelength separation between adjacent modes in a GaAs laser with L = 75 m.
Here, we use the results of Prob. 14.25 with
"=
c
f #s
=
hc
E G #
Matter Waves:
What are These Waves for Particles?
It is the new mechanicsQUANTUM MECHANICSthat has
caused us to look for the waves that represent particles.
Consequently, it is this new physicsquantum mechanics
that replaces the usual classical mechanics
By crystal structure, we mean the regular (or not)
arrangement of the atoms.
We can talk about planes of
atoms (which are rows in this
2D projection of the 3D lattice.
These planes define directions
relative to the planeseach
plane has a surface normal
ve
Face-centered cube
Typical Lattice Types
For the FACE CENTERED CUBIC lattice, we have to define the three lattice
vectors so that they fully account for the atoms at the face centers.
The three primitive vectors run
from a corner atom to the three
adjacen
4
Semiconductors
We found in the preceeding chapters that the atoms in a
crystalline solid were located at the lattice points (and on the sites
of the basis for that lattice). We also found the electrons were
attracted to isolated atoms by the Coulomb pot
5
Electrical Transport
In the preceding few chapters, we have primarily discussed the crystal properties
and the energy bands of the semiconductors. There, it was pointed out that, at low
temperatures, the valence band was completely full, and the conduct
9
Magnetic Materials
Magnetic materials have been a keystone material in a variety of applications
found in engineering. These include motors, generators, and memories for computers.
Indeed, in the earliest computers, magnetic materials were used as the a
8
Optoelectronics
The properties of excess carriers in semiconductors is one of the more interesting
aspects of this material. We first encountered excess carriers in Chapter 5, where we
discussed diffusion and recombination of these carriers. They were t
Preparing the Silicon for VLSI
Most materials may actually exist in ALL three different states
* Depending on the manner in which they were FABRICATED
* Crystalline materials are the most DIFFICULT to make
And typically require special processes
SINGLE
EEE 352Properties of Electronic Materials
and Devices
David K. Ferry
Regents Professor
Arizona State University
ECE 352 - Lecture 01
Introduction
Class Hours: 10:45-12:00 MWF
Class Site: StaufA232
Me: D. K. Ferry, Regents Prof. of SECEE
My Office: ERC 559
10
Superconductivity
In 1911, Kammerlingh Onnes was busy investigating the low-temperature properties of materials in his laboratory in Leiden, the Netherlands. Only three years earlier,
he had been the first person to be successful in the liquefaction of
EEE352
Doping
T0405
Donors
Doping allows introducing additional free charges in the
conduction or valence band of an intrinsic semiconductor.
Such free charges selectively change the conductivity of a
semiconductor.
Consider adding a group V element, such
EEE352
The Kronig-Penney Model 1/2
T0301
The Kronig-Penney Potential
Potential function of a single, non-interacting, one-electron atom.
Potential function for several atoms in close proximity are arranged in a one-dimensional array.
The one-dimensional K
EEE352
Quantum Theory of Solids
T0206
Level Splitting
From Energy Levels to Energy Bands
Radial probability density function for the lowest electron energy state
of the single, non-interacting hydrogen atom.
The same probability curves for two atoms that
EEE352
Quantum Statistical Mechanics:
The Fermi-Dirac Distribution
T0401
Quantum Statistics Degeneracy
The particles are identical and indistinguishable.
The particles obey the exclusion principle, so that no two particles can be in the same dynamical
st