EEE 335 Analog and Digital Circuits (4) [Fall, 2011]
Any and all parts of this syllabus are subject, at any time to alteration, deviation
or omission, according to the needs and/or progress of the class.
Course Description:
Analog, digital microelectronic
Lab # 4: Design and Analysis of Common Source Amplifier with Active Load 2011 Fall
1. Task: Design a Common Source Amp with active PMOS load with the following specifications:
Technology:
Power supply:
Voltage gain:
Total Current:
Output dynamic range:
CM
Lab #3
Design and Analysis of CMOS Gates
2011 Fall
Objective: The objective of this lab is to design and develop a library of basic gates. You will be using
CADENCE Spectre circuit simulations. These gates will be used in the design a two bit adder and
yo
Unit #2
Chapter #14.6: Power
Dissipation
Lecture 11 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Problem14.65
An inverter has a 3.3V supply. It draws a static current of 60 uA in one state and 0 uA in the
other.
Unit #2
Chapter #14.6: Power
Dissipation
Lecture 11
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
14.6.1 Source of Power
Dissipation
There are two classifications of
power dissipation
1. Static refers to power
dissipated when inp
Unit #2
Chapter #14.4: Dynamic
Operation of CMOS Inverter
Lecture 9
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
14.4.1 Propagation Delay
When driving capacitive loads,
the output cannot respond
instantaneously to the input
The
Unit #2
Chapter #14.4: Dynamic
Operation of CMOS Inverter
Lecture 9 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Exercise 14.8
A capacitor whose initial voltage is 0V is charge to VDD = 1.8V by a constant curren
Unit #2
Chapter #143: The CMOS
Inverter
Lecture 8
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing 14.3.1 Circuit Operation
V130
Advantages of the simple NMOS
I Zero static power
I Wider noise margins
I Faste-r switching speed
(lowe
‘ Unit #3
Chapter #15.4: NMOS
Transistors as Switches
Lecture 12 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Example 15.3
An NMOS switch is made in a technology where kn’ = 50 uA/VZ, kp’ = 20 uA/VZ' |Vt0| = 1V,
Unit #3
Chapter #15.4: NMOS
Transistors as Switches
Lecture 12 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Example 15.3
An NMOS switch is made in a technology where kn = 50 uA/V2, kp = 20 uA/V2, |Vt0| = 1V,
=
Unit #2
Chapter #14.5: Transistor
Sizing
Lecture 10 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Example 14.8
Assume L = Lmin = 0.25 um for all transistors. What are the Ws for the logic below if the
reference i
Unit #2
Chapter #143: The CMOS
Inverter
Lecture 8 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing p3)»
Problem 14.36 '
For the CMOS inverter shown, ON and QP are matched
and VI is rising slowly from 0 to VDD. At wh
Unﬂ#2
Chapter #142: Digital Logic
Inverters
Lecture 7 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Example 14.23
For the simple NMOS inverter, derive expressions for VOH, VOL, VIH, VIL, and VM. Neglect 7L and
sh
Unit #1
Chapter #5.1: M05 Transistor
Structure & Operation
Lecture 1 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Exercise 5.2
If t0)( = 4 nm and un = 450 cmZ/Vs find COX, kn’ and the overdrive voltage required
Unit #1
Chapter #53: MOSFET
CIRCUITS at DC
Lecture 3 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Exercise 5.9
Design circuit so that VD = 0.7 V. You
are given Vt = 0.5 V, unCOX= 0.4 mA/VZ,
W/L = 0.72um/0.18um a
Unﬂ#1
Chapter #5.4: Body Effect and
Other Topics
Lecture 4 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Problem 5.62
An NMOS transistor operates with VSB in the range 0V to 4V.
1. If Vto = 1 V, 2(1)f = 0.6 V, an
Unit #1
Chapter #5.4: Body Effect and
Other Topics
Lecture 4 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Problem 5.62
An NMOS transistor operates with VSB in the range 0V to 4V.
1.If Vt0 = 1 V, 2f = 0.6 V, and
Unit #1
Chapter #5.2: Current-
Voltage Characteristics
Lecture 2 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Exercise 5.6
a. An NMOS transistor has unCOX = 200 uA/V2 and VA’ = 50V/um. If L = 0.8 um
and W = 16 u
Unit #1
Chapter #5.4: Body Effect and
Other Topics
Lecture 4
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
5.4.1 The Body Effect
(n-channel MOSFET)
In some cases we will see,
particularly when the NMOS is
used as a switch, the b
Unit #1
Chapter #5.2: Current-Voltage
Characteristics
Lecture 2
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
5.2.1. Circuit Symbols
N-channel
P-channel
Oxford University Publishing
Microelectronic Circuits by Adel S. Sedra and K
Unit #1
Chapter #5.3: MOSFET
CIRCUITS at DC
Lecture 3
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Example 5.3
Design circuit so that iD = 0.4 mA and
VD = 0.5 V. You are given Vt = 0.7 V,
kn=100 A/V2, L = 1 m, W = 32 m,
and = 0
Unit #1
Chapter #5: MOS Field Effect
Transistors (MOSFETs)
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Introduction
IN THIS UNIT YOU WILL REVIEW
The device structure and operation of the MOS field
effect transistor (MOSFET).
Unit #2
Chapter #14: CMOS Digital
Logic Circuits
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Introduction
IN THIS UNIT YOU WILL LEARN ABOUT
The structure, operation, and synthesis of CMOS logic
The voltage transfer character
Unit #2
Chapter #14.1: CMOS Logic-
Gate Circuits
Lecture 6 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing Example 14.1
Synthesize a CMOS logic circuit that implements the Boolean function
Y=A+B(C+D)
-\- '-?DU
6&
Unit #1
Chapter #5.3: MOSFET
CIRCUITS at DC
Lecture 3 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Exercise 5.9
Design circuit so that VD = 0.7 V. You
are given Vt = 0.5 V, nCox= 0.4 mA/V2,
W/L = 0.72m/0.18m and
Unit #4
Chapter #8.3: Basic Gain Cell
Lecture 21 Example Problems
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
Example 8.3
A practical implementation of an integrated CS amplifier is shown below. Sketch the VTC of the
amplifier
Unit #4
Chapter #7.3.6 & 8.4:
Buffers: CG and SF Amplifier
Lecture 21
from Microelectronic Circuits Text
by Sedra and Smith
Oxford Publishing
7.3.6 Need for Voltage Buffers
Consider a 1V voltage source,
vsig, with 1M internal
resistance, Rsig, driving a