EE 243 Winter 2014
Homework 2
J.S. Harris
Due Thursday, January 30, 2014, at 5 pm, in CISX 329
1. Heterojunction (20 points)
a) Roughly sketch the band diagram for a p-GaAs/N-AlxGa1-xAs (x=0.3) heterojunction
without an external bias. The doping concentra
1/9/14
Lecture 2!
Ch. 1 Review of Basic Semiconductor Physics(1)
1. Crystals and Lattices
2
2. Semiconductor Band Structures
3. Band Structure and the Brillouin Zones
10
4. Kane Band Theory Results
21
5. Density of States
29
6. Semiconductor Sta
EE243 Winter 2014
Homework 4
J.S.Harris
EE 243 Homework 4
Due Friday, February 14, 2014, at 5 pm, in CISX 329
1. p-n junction (30 points)
A semiconductor sample is composed of 2 regions as shown below. Consider regions I
and II which are far away from the
EE243 Winter 2014
Homework 7
J.S.Harris
EE 243 Homework 7
Due Thursday, March 6, 2014, at 5 pm, CISX 329
1. Reflective modulator (30 points)
We are designing a reflective quantum well modulator, desiring to achieve the
maximum contrast ratio with the foll
1/10/12
EE243 Semiconductor Optoelectronic
Devices
!
Prof. James Harris!
Room 328, Paul Allen Center for Integrated Systems (CISX)!
!
[email protected]!
Web Page - http:/ee.stanford.edu/~harris!
(650) 723-9775, (650) 723-4659 fax!
Ofce Hours 2: 05
EE 243 Winter 2014 Homework 1
J.S. Harris
EE 243 Homework 1
Due Thursday, January 23, 2014, at 5 pm, in CISX 329
1. Lattice types (15 points)
Determine the packing fraction of
a) simple cubic lattice; b) face-centered cubic lattice; c) diamond lattice,
as
EE243 Winter 2014
Homework 5
J.S.Harris
EE 243 Homework 5
Due Thursday, February 20, 2014, at 5 pm, in CISX 329
1. Photocurrent in p-i-n photodiode (10 points)
Estimate the photocurrent in a reverse-biased pn diode, made entirely out of
GaAs, at photon en
EE243 Winter 2014
Homework 8
J.S.Harris
EE 243 Homework 8
Due Thursday, March 13, 2014, at 5 pm, in class or CISX 329
1. Laser (25 points)
A piece of InAs completely fills a laser cavity at room temperature. The cavity has
very high reflectivity mirrors a
EE243 Winter 2014
Homework 3
J.S.Harris
EE 243 Homework 3
Due Thursday, February 6, 2014, at 5 pm, in CISX 329
1. Absorption of thin film (10 points)
A 1064 nm laser is shining on an unknown compound III -V semiconductor thin
film in the optics lab. The f
EE243 Winter 2014
Homework 6
J.S.Harris
EE 243 Homework 6
Due Thursday, Feb 27, 2014 at 5 pm, in class or CISX 329
1. Band Diagram of Solar Cell (30 points)
(a) Consider an ideal pn junction with the ideal metal contacts on the two sides.
Length of the de
EE24 Winter 2013
43
2
Ho
omework 7
J.S.Harris
EE 243 Homewo 7
ork
Due Thurs
sday, March 7, 2013, a 5 pm, CIS 329
h
at
SX
1. Re
eflective modulator (30 points)
m
(
We are designing a reflec
a
ctive quant
tum well m
modulator, d
desiring to achieve th
he
ma
EE24 Winter 2013
43
2
Ho
omework 5
J.S.Harris
EE
E243Hom
mework5S
Solutions
1. Mo
olecular be
eam epitax (MBE) growth (15 points)
xy
g
In MBE, fluxes of the elem
ments are controlled b y vapor pre
c
essure, which is in tur
rn
rolled by th temperat
he
ture
EE243 Winter 2013
Homework 6
J.S.Harris
EE 243 Homework 6 Solutions
1. Band Diagram of Solar Cell (30 points)
(a) Long base
Open circuit band diagram
Fermi levels split and the gap between them is equal to Voc.
Fermi levels remain flat throughout the devi
EE 243 Winter 2013
Homework 2
J.S. Harris
Due Thursday, January 31, 2013, at 5 pm, in CISX 329
1. Heterojunction (20 points)
a) Roughly sketch the band diagram for a p-GaAs/N-AlxGa1-xAs (x=0.3) heterojunction
without an external bias. The doping concentra
EE 243 Winter 2013 Homework 1
J.S. Harris
EE 243 Homework 1
Due Thursday, January 24, 2013, at 5 pm, in CISX 329
1. Lattice types (15 points)
Determine the packing fraction of
a) simple cubic lattice; b) face-centered cubic lattice; c) diamond lattice,
as
EE24 Winter 2013
43
2
Ho
omework 4
J.S.Harris
EE 243 Homewo 4
3
ork
Du Thursday February 14, 2013, at 5 pm, in CISX 329
ue
y,
y
n
(
1. p-n junction (30 points)
A sem
miconductor sample is composed of 2 regions as shown belo Consider regions I
r
f
s
ow.
an
EE24 Winter 2013
43
2
Ho
omework 5
J.S.Harris
EE 243 Homewo 5
3
ork
Du Thursday February 21, 2013, at 5 pm, in CISX 329
ue
y,
y
olecular be
eam epitax (MBE) growth (15 points)
xy
g
1. Mo
Brief (no more than 5 se
fly
e
entences) describe ho an 8nm In0.1Ga0
EE243 Winter 2013
Homework 6
J.S.Harris
EE 243 Homework 6
Due Thursday, Feb 28, at 5 pm, in class or CISX 329
1. Band Diagram of Solar Cell (30 points)
(a) Consider an ideal pn junction with the ideal metal contacts on the two sides.
Length of the device
EE243 Winter 2013
Homework 3
J.S.Harris
EE 243 Homework 3
Due Thursday, February 7, 2013, at 5 pm, in CISX 329
1. Absorption of thin film (10 points)
A 1064 nm laser is shining on an unknown compound III-V semiconductor thin
film in the optics lab. The fi
