2-The FundamentalsEnergy
Bands in Semiconductors
!
I. Crystal Structures
Solids can be classied as:
A. Crystalline - three dimensional long range order of atoms;
repeating "unit cell".
Examples: Si wafer, diamond, GaAs, ZnSe.
B. Polyc
EE216 Homework 1
Due Thursday, Jan 14 in class or by 5pm Friday Jan 15 at Allen-X 329
Read
MKC Chapter 1.1 up to page 26. (Also recommended: CCH Chapter 1.)
Bookmark
http:/www.ioffe.rssi.ru/SVA/NSM/Semicond/
1. Estimate how many modern Si transistors can
EE216 Winter 2016
Profs. E. Pop, J. Plummer
EE216 Homework 3
Due by 5pm Friday Jan 29 at Allen-X 329
Read
MKC Chapters 1.2-1.3 & 5.1. 5.2 (Also recommended CCH Chapters 2.6-2.9 and 4.7)
1. An n-type sample of silicon with N D = 1017 cm 3 is steadily ill
EE 216 Autumn 2010
Prof. James Harris
September 29th, 2010
Problem Set 1 Due: Wednesday, October 6th at 5pm
You can hand in the problem set in class, or at CISX 329.
1. Energy Band Gap Gymnastics [15 pts.]
a) For silicon, if EG decreases by 0.052 eV, by w
c hv.jz
d u e I+"1-
e lec<i.
cfw_ ra/
- v o l t e-19
f
de
'77 = *r"
tr = erLlpJX
J
e=-#
o( V = - leax
("/
q<o.bJic-
fu)
q I 'lea
uo, l " P " 6 r^x
v
lN lr"u p-tL Q"wJ- conv,cts
(q)
tlr
Qa
@e
Fy'h,-r. " .^*oo
b/u Sr X
AI
, ^,.,- ^ r.
lr, + h-rn
"- " o", t
EE 216 Autumn 2010
Prof. James Harris
September 29th, 2010
Problem Set 1 Due: Wednesday, October 6th at 5pm
You can hand in the problem set in class, or at CISX 329.
1. Energy Band Gap Gymnastics [15 pts.]
a) For silicon, if EG decreases by 0.052 eV, by w
EE216 Autumn 2012-2013
Prof. James Harris
Problem Set 3
You can hand in the problem set in class, or at CISX 329.
Question 1 (Pierret 3.17, 15 points)
Question 2 (Pierret 3.21, 15 points 3 each)
Oct. 10th, 2012
Due: Wednesday, Oct 17th, 5pm
Question 3 (Pi
Problem Set 4 Solution
Problem 1 (Pierret 6.10 15 points, 4+3+4+4 each)
Problem 2 Pierret 5.4 (15 points, 3 each)
Problem 3(Pierret 5.10 17 points, 5+5+7)
Problem 4 ( 20 points, 5 each)
1.48e4
Problem 5 Depletion region R-G current (15 points, 5 each)
(a)
EE 261 The Fourier Transform and its Applications
Fall 2011
Solutions to Problem Set Five
1. (20 points) Windowing functions
In signal analysis, it is not realistic to consider a signal f (t) from < t < . Instead,
one considers a modied section of the sig
EE 261 The Fourier Transform and its Applications
Fall 2008
Solutions to Problem Set Two
1. (10 points) Whither Rayleigh? What happens to Rayleighs identity if f (t) is periodic of
period T = 1?
Solution:
For a function f with period T , we have the expan
EE 261 The Fourier Transform and its Applications
Fall 2011
Problem Set Eight
Solutions
1. (20 points) A True Story : Professor Osgood and a graduate student were working on a
discrete form of the sampling theorem. This included looking at the DFT of the
9-MOS CAPACITORS
I. Band Diagrams
Metal-Oxide-Silicon is the single most important component
for a large number of semiconductor devices.
E0
i=0.95 eV
M = 4.1 eV
q MAluminum
= 4.1eV
Si
MOS Structure
EF
Aluminum
E0
EC
E0
= 4.05 eV
S
E0 EC
EF
q
o x = 0.95e
EE 216: Principles and Models of
Semiconductor Devices
Lecture 16
Silicon bonding
Si (14) - 1s2 2s2 2p6 3s23p2
1s2 2s2 2p6 3s13px13py13pz1
4 valence electrons, covalent bonding between atoms
1
More than two atoms
Interactions of valence orbitals produce
EE 216: Principles and Models of
Semiconductor Devices
Lecture 15
Junctions and devices under study
Metal-semiconductor
junction & diode
PN junction & diode
Bipolar junction transistor
Photonic devices: LED,
solar cell, photodiode
MOS junction and
capacit
EE216
Homework 1
Winter 2017
Due in lecture Thursday, January 19, 2017 or before 5:00 pm in Allen 329X.
0. Create an account on nanohub.org, since youll need to use its simulation tools for
upcoming homework assignments. This website has a variety of usef
EE216
Winter 2017
Homework 4
Due in lecture Thursday, February 9, 2017, or before 5:00 pm, in Allen 329X
.
1. A lightly doped, symmetrical p-n junction silicon diode has the following parameters:
sh is
ar stu
ed d
vi y re
aC s
o
ou urc
rs e
eH w
er as
o.
EE216
Winter 2017
Homework 2
Due in lecture Thursday, January 26, 2017, or before 5:00 pm, in Allen 329X
Reading: MKC Chapters 1.2-1.3. Also recommended: CCH Chapters 2.1-2.5.
1. A hole is moving in a region of very lightly doped silicon under an applied
EE216 Winter 2016
Profs. E. Pop, J. Plummer
EE216 Homework 3
Due by 5pm Friday Jan 29 at Allen-X 329
Read
MKC Chapters 1.2-1.3 & 5.1. 5.2 (Also recommended CCH Chapters 2.6-2.9 and 4.7)
1. An n-type sample of silicon with N D = 1017 cm 3 is steadily ill
EE216 Homework 1
Due Thursday, Jan 14 in class or by 5pm Friday Jan 15 at Allen-X 329
Read
MKC Chapter 1.1 up to page 26. (Also recommended: CCH Chapter 1.)
Bookmark
http:/www.ioffe.rssi.ru/SVA/NSM/Semicond/
1. Estimate how many modern Si transistors can