Stanford University
EE 320: Nanoelectronics
Lecture 01 Introduction
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
[email protected]
http:/w
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #1: Tunnel FET
Out: Friday, April 12th, 2013
Due: Thursday, April 18th, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 2 problems
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #1: Tunnel FET
Out: Friday, April 12th, 2013
Due: Thursday, April 18th, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 3 problems
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #2: Tunnel FET
Out: Friday, April 19th, 2013
Due: Thursday, April 25th, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 4 problems
EE320 Final Project, Spring 2013
Due June 10th, 2013, at 5pm by
email to [email protected]
Include your name, SU student number, and email in the cover page
Please put filename format as FirstInit
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #2: Tunnel FET
Out: Friday, April 19th, 2013
Due: Thursday, April 25th, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 4 problems
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #3: Graphene
Out: Sunday, April 28th, 2013
Due: Thursday, May 2nd, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 5 problems in th
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #4: Graphene
Out: Friday, May 4th, 2013
Due: Thursday, May 9th, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 4 problems in this
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #5: Graphene and CNT
Out: Monday, May 13th, 2013
Due: Sunday, May 19th, 2013 (Paul Allen 332X or Email by 11:59PM)
Notes:
There are 3 problems in
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #6: Graphene devices
Out: Tuesday, May 21st, 2013
Due: Sunday, May 26th, 2013 (Paul Allen 332X or Email by 11:59PM)
Notes:
There are 4 problems in
EE 320
Winter 2012-2013
Prof. Philip Wong
Problem Set #3: Graphene
Out: Sunday, April 28th, 2013
Due: Thursday, May 2nd, 2013 (in class or Paul Allen 332X by 12:15PM)
Notes:
There are 5 problems in th
Contents
General remarks
The classical region
Tunneling
The connection formulas
Literature
The WKB approximation
Quantum mechanics 2 - Lecture 4
Igor Lukaevi
cc
UJJS, Dept. of Physics, Osijek
29. list
Problem 3
1. Doping occurs due to the changes in the graphene channel in the vicinity of the drain
contact. The amount of doping due to the high-field stress can be observed by the change
of Vcnp in a
Problem 3
1. In a GNR, the confinement gap is inversely proportional to width of the ribbon while that
of a CNT, the quantum confinement dictates a slightly different energy state spacing. The
result
EE320 HW 4
Due 5/10/2013
EE320 HW 4
Problem 4
1. These two curves represent the Cq as a function of local electrostatic at equilibrium
versus at an 0.2V bias voltage. The differences between these two
Stanford University
EE 320: Nanoelectronics
Lecture 02 Energy Efficient Electronic Devices
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
hspwo
Stanford University
EE 320: Nanoelectronics
Lecture 03 Tunneling Devices
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
[email protected]
ht
Stanford University
EE 320: Nanoelectronics
Lecture 04 Tunneling Current, TFET Model,
Device Optimization
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, Californi
Stanford University
EE 320: Nanoelectronics
Lecture 5 Introduction to Carbon Nanomaterials
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
hspwo
Stanford University
EE 320: Nanoelectronics
Lecture 6 Graphene Band Structure
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
[email protected]
Stanford University
EE 320: Nanoelectronics
Lecture 7 Carbon Nanotube Band Structure
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
[email protected]
Slide 1
Stanford University
EE 320: Nanoelectronics
Lecture 02 Energy Efficient Electronic Devices
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.
Slide 1
Stanford University
EE 320: Nanoelectronics
Lecture 03 Tunneling Devices
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
[email protected]
EE320
HW1
Hw1
1. a) According to paper (a), tunneling current can be enhanced by lowering the source side
tunneling barrier by bandgap engineering the heterojunctions. In paper (b), optimizing the
oxi
EE320 HW2
Due 4/25/2013
EE320 HW2
Problem 1
1. Ambipolarity is suppressed by designing the doping profile of the device such that it is
asymmetric, forcing movement of one type of carrier to be restri
Problem 4
1. Growing graphene on Ni produces multilayers at the grain boundaries, and since the grain
size of Ni is small, this is not ideal. The result of this is non-uniform, non-single layer
graphe
Stanford University
EE 320: Nanoelectronics
Lecture 0 Admin
H.-S. Philip Wong
Professor of Electrical Engineering
Stanford University, Stanford, California, U.S.A.
[email protected]
http:/www.stanf