MSE 199/MSE209
Homework #2
1. Conduction in semiconductors
You have received a box of Si wafers from a friend. The label on the box claims that the mobility of
the electrons in these Si wafers is 1400 cm2/Vs. You have found the following figure in your
ha
MSE 199/MSE 209
Homework #1, 2015
Grading: Every Q carries 1-2 points. In case of 1 point Qs, no partial credit. In case of 2 point
Qs, 1 point for partial credit. Scores from 0 to 34; normalized to 0 to 100 (max 110).
Most of these questions are more int
MSE 199/MSE209
Homework #4
Question 1: Bandstructure of a nanowire (40%)
The dispersion relation for the valence band electrons of a semiconductor nanowire of length L lying
along an x-axis is given by:
E ( k x ) = -ak x2 + b k x4
where and are positive c
MSE 199/MSE209
Homework #3
(1) De Broglie
(a) You are interested in exploring the crystal structure of matter with neutrons, electrons,
and photons in diffraction experiments. What energy neutrons, electrons, and photons
would you choose ?
(b) In what way
MSE 199/MSE209
Homework 5
1. Free electron gas in two dimensions
In class we derived the density of states g(E) for the 3-dimensional semiconductor and found that the
density of states is proportional to the square root of the energy. With the advances in
MSE 199/MSE209
Homework # 6
1. The pn-junction
You have fabricated a Si based pn-junction with an acceptor concentration NA = 1017cm-3
on the p-side of the junction and a donor concentration of ND = 1014cm-3 on the n-side of
the junction. You are interest
MSE 199/MSE209
Homework # 7
1. The Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
The Figure below shows a Si-based MOSFET, operated at room temperature. It has a gate oxide
(SiO2) with a thickness of 10nm, a gate length, L = 180 nm, and a gat