Solutions Chapter 7
7.1. In any circuit, the transistor operation can be understood by examining the superposition of the transistor characteristics and the conditions imposed by the circuit (the load line). What differentiates, then, a digital trans
SOLUTIONS CHAPTER 1
1.1. Show that Equation (1.6) follows from Equation (1.3). q2 dr . Integrating both sides we obtain Solution: Equation (1.3) is dEP 4 0r 2 q2 q2 1 q2 1 dEP const EP 2 dr 2 dr 4 0r 4 0 r 4 0 r To find the constant, we employ the bo
Solutions Chapter 3
3.1. Calculate the speed of an electron in Si with kinetic energy 0.013 eV. Draw an equilibrium energy band diagram for silicon and indicate where this electron will be. Compare your calculated thermal speed to the typical drift v
SOLUTIONS CHAPTER 9
9.1. For each of the transistors in Figure P9.1, indicate the mode of operation (forward active, cutoff, saturation, etc.)
9V 9V
4.9 V 4.8V 4.1V 0.2 V
5.0V
(a)
(b)
9V
0.7 V
0.7 V
-5 V
0.5V
(c) -9 V
(d)
a) This is an np
Chapter 4 Solutions
4.1. Consider a p-type Si sample of length 0.1 m in which the net doping varies exponentially from 51017 to 51015. Find the electric field. Following the example of Section 4.2.2,
x x0
N ' x ln A' 0 N A x
and
x x0
SOLUTIONS CHAPTER 5
5.1. A silicon pn junction is formed between n-type silicon doped with ND=1017cm-3 and p-type silicon doped with NA=1016 cm-3. a) Sketch the energy band diagram. Label both axes and all important energy levels. Neither side is deg
Solutions Chapter 6
6.1. Consider a base-collector junction of a silicon BJT (bipolar junction transistor) like that if Figure 6.1. Assuming a linearly graded junction with a=1.2x1018 cm-3/um, find Vbi This can be done iteratively from Equation (6.11
SOLUTIONS TO PROBLEMS FROM CHAPTER 8
8.1. Figure P8.1. shows the ID-VGS characteristic for an NMOS with VDS=50 mV. It is known for this device that W=10m, L=0.5m, and tox=5 nm. a) Find the threshold voltage
Since VDS=50 mV and L=0.5m, the average fi
SOLUTIONS CHAPTER 10
' 10.1 For an npn transistor with N DE ' 1019 cm 3 , N AB
2 1017 cm 3 ,
' N DC 5 1016 cm 3 , WE 0.13 m , and WB I B 20 A and VBC 2.5V , find a) b) IC c) r d) gm e) CBE (C )
0.15 m under the bias conditions of
f) C g) fco h) f
SOLUTIONS CHAPTER 2
2.1. Of the two materials whose E-K diagrams are shown in Figure P2.1, which will have the lowest effective mass for electrons? Which will have the lowest effective mass for holes? Explain how you arrived at your conclusion.
E E
CHAPTER 11 PROBLEM Solutions
11.1. Consider a photodetector operating in the neighborhood of 60 GHz. How many cycles of green light are there in a single cycle of 60 GHz? Can a photodetector be used to follow the oscillations of the electromagnetic f