EE_CMPEN_416
Laboratory #2
Fall 2008
All Transistor Inverters
Introduction
A number of advantages are present when both p-channel and n-channel FETs are used to build
logic gates. While the thickness of the gate oxide layer is determined globally across t
EXPERIMENT 1: SIMPLE TRANSISTOR INVERTER
Name: Shuvra Podder
Date: September 14, 2010
INTRODCUTION
This lab is mainly focused on review of the equipments, such as oscilloscope, DC power source,
and signal generator, as well as getting parameters of CD4007
PartA
Voh=1.85
Vol = 0.610
Vih = 4.92
Vil = -0.24
Transition gain = delta y/delta x = 1.14V/-2.64 = -0.4318
PartB
When a current=0.3mA
When a current=0.1mA
Part C
1 PMOS 1 NMOS, Vil = -4.84 V, Vih = 2.24 V Transiotion gain: -4.58/600mv = -7.63
I PMOS, 2-p
Name: Shuvra Podder
Partners: Lucas Tanaka, Jinhyun So, Kamrul Hasan, and Robert Page
EE 416 LAB 4
INTRODUCTION
In this lab, we will be working on transmission lines. The transmission lines acts differently from
the circuits, due to the length of the line
EE/CMPEN 416: Digital Integrated Circuits
Homework 2 (Due: Sept 15, 2017)
Please show all the steps to receive full credit.
Please state clearly any assumption that you make.
The work that you submit must be your own. Any acts of academic dishonesty may
r
CMPSC 311- Introduction to
Systems Programming
Module: Concurrency
Professor Patrick McDaniel
Fall 2016
CMPSC 311 - Introduction to Systems Programming
Sequential Programming
Processing a network connection as it arrives and
fulfilling the exchange compl
CS 461
Programming Languages
Lambda Calculus
Gang Tan
Computer Science and Engineering
Penn State University
2
Readings
History
Ch11.7 of the supplemental materials of the
textbook
History
See the schedule page of the course website
Introduced by Alonzo
Name: Shuvra Podder
Partners: Jin So, Lucas Tanaka
LAB 2
INTRODUCTION
In this lab, we will be looking at how the W/L ratio effects the CMOS characteristics.
Note: Please note that for PART B and PART D, the oscilloscope values are not calibrated. You will
INTRODUCTION
PART A
In this part of lab, we will be buidling NAND gate and NOR gate using CD4007.
CMOS
NAND gate 1 1 1 and 000 alternating
NAND gate 011 and 000 alternating
MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Department of Electrical Engineering and Computer Science
6.374: Analysis and Design of Digital Integrated Circuits
Problem Set # 1 Solutions
Fall 2003
Issued: 9/18/03
Problem 1: Device Parameters
The data from ve mea
MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6.374: Analysis and Design of Digital Integrated Circuits Problem Set # 2 Solutions
Fall 2003 Issued: 9/18/03 Due: 9/30/03
For these problems you should use th
MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Department of Electrical Engineering and Computer Science
6.374: Analysis and Design of Digital Integrated Circuits
Problem Set # 3 Solutions
Fall 2003
Issued: 10/14/03
For these problems you can use the process para
Name: Shuvra Podder
Partners: Jin So, Lucas Tanaka
LAB 2
INTRODUCTION
In this lab, we will be looking at how the W/L ratio effects the CMOS characteristics.
Note: Please note that for PART B and PART D, the oscilloscope values are not calibrated. You
will
EXPERIMENT
1:
SIMPLE
INVERTER
Name: Shuvra Podder
Date: September 14, 2010
TRANSISTOR
INTRODCUTION
This lab is mainly focused on review of the equipments, such as oscilloscope, DC power
source, and signal generator, as well as getting parameters of CD4007
Name: Shuvra Podder
Parters: Jin Hyun So, Lucas Tanaka
EE 416 LAB 5
INTRODUCTION
In this lab, we worked on making different types of logic circuit created by NMOS and
PMOS and learning its properties. We will building following logic circuits: transmissio
Name: Shuvra Podder
Partners: Lucas Tanaka, Jinhyun So, Kamrul Hasan, and Robert Page
EE 416 LAB 4
INTRODUCTION
In this lab, we will be working on transmission lines. The transmission lines acts
differently from the circuits, due to the length of the line
Shuvra Podder
LAB 3
INTRODUCTION
In this lab, we will be working with NAND gate and NOR gates, after building them with the
CD4007. We will figure out the characteristic of these logic gates. Then later, we will be
working with inverters in parallel orien
CHAPTER 4
P4.1. Problem should refer to Figure P4.2.
a. All inverters but the CMOS inverter consume static power then the output is high.
Notice that in the first three inverters when the input is high, there is always a direct
connection from VDD to GND.
CHAPTER 3
P3.1. The general approach for the first two parameters is to figure out which variables should
remain constant, so that when you have two currents, you can divide them, and every
variable but the ones you want to calculate remain. In this case,
o express each e
a. F CBA CBA CBA CBA
A
0
0
0
0
1
1
1
1
B
0
0
1
1
0
0
1
1
C
0
1
0
1
0
1
0
1
F
0
0
0
1
0
1
1
1
Table P 1
C
AB
0
1
00
0
0
01
0
1
11
1
1
10
0
1
Table P 2
Collecting the terms together we find:
F AB AC BC A B A C B C
b. F DC A DCA D A C D CA
CHAPTER 2
P2.1. a) The solution for the NMOS case is based on Example 2.4:
The equation for VT0 is: VT 0 = VFB 2 F
QB
COX
Calculate each individual component.
Fp
ni
kT
3 1017
=
ln
= 0.026 ln
= 0.44 V
q
NA
1.4 1010
GC = Fp G ( gate ) = 0.44 0.55 = 0.99 V