EE 442 Homework 1 -Solutions
Fall 2015
Distribute on 08/28/2015, Due in Class on Friday, 09/04/2015
1. A HeNe laser outputs 1 mW of power at 632 nm.
(a) Determine the energy per photon
(b) Determine t
EE 442 Homework 2
Fall 2015
Distribute on 09/04/2015, Due in Class on Friday, 09/11/2015
1. A semiconductor has a band structure about the minimum along [100] described by
E E0 Acosk x Bcos k y cos k
1. (a) Compare configuration and uses of the DIP and PGA packages. Which type and why is
used in advanced high-density logic ICs such as microprocessors?
ANS - A dual in-line package DIP, or dual in-l
EE 442 Solid State Devices
Fall 2010
Assignment 9
Due: Friday, December 03, in class
Optical Devices: Solar Cells and LEDs
We learnt about absorption of optical energy in semiconductors and about the
EE 442 Solid State Devices
Fall 2010
Assignment 7
Due: Monday, November 5, in class
Metal-Semiconductor Junction
We studied the metal-semiconductor junction in detail. We learnt how to do electrostati
EE 442 Solid State Devices
Fall 2010
Assignment 8
Due: Friday, November 19, in class
MOS Capacitor
We studied the metal-oxide-semiconductor capacitor in detail. We learnt how to do electrostatic
analy
EE 442 Solid State Devices
Fall 2010
Assignment 3
Due: Friday, September 24, in class
Quantum and Statistical Mechanics
We learnt about the concept of effective density of states as well as Fermi Dira
EE 442 Solid State Devices
Fall 2010
Assignment 5
Due: Monday, October 11, in class
Hall Effect and Physics of Excess Carriers
We learnt the fundamentals of Hall Effect to calculate the doping type, f
EE 442 Solid State Devices
Fall 2010
Assignment 6
Due: Friday, October 29, in class
P-N Junction
We studied the P-N junction in detail. We learnt how to do electrostatic analysis of a p-n junction
in
EE 442 Solid State Devices
Fall 2010
Assignment 4
Due: Monday, October 04, in class
Donor and Acceptor Statistics and Carrier Transport
We learnt the concept of the density of states in multi-dimensio
EE 442 Solid State Devices
Fall 2010
Assignment 2
Due: Monday, September 13, in class
Quantum Mechanics
We solved the Schrodingers Wave Equation for a particle in a box, a particle tunneling through
a
LAB Report 2
EE441
Satyajit Roy
Lab 4 NTYPEDOPINGANDDIFFUSION
Introduction:
In the previous lab, a lithography step was performed to define the source and drain
regions. Then, a buffered oxide etch wa
EE 442: Solid State Devices
Fall 2015
Part 5: Charge Carriers in Semiconductors
Effective Mass; DOS; Fermi Level; Doping
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
T
EE 442: Solid State Devices
Fall 2015
Part 3: Introduction to Quantum Mechanics
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Q&As from last lecture
In confliction of
EE 442: Solid State Devices
Fall 2015
Part 8: Solid State Optical Devices
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Recap
Induce carriers in CB and VB such that ca
EE 442: Solid State Devices
Fall 2015
Part 6: Charge Transport in Semiconductors
Drift, Diffusion, Hall Effect
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Charge Tran
EE 442: Solid State Devices
Fall 2015
Part 7: Carrier Generation and Recombination
(Non-Equilibrium Process)
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Generation an
EE 442: Solid State Devices
Fall 2015
Part 4: Energy Bands
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Big Picture: Why are we studying this?
Its all based on I-V pro
EE 442: Solid State Devices
Fall 2015
Part 2: Introduction to Semiconductor Materials
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Semiconductor materials
EE 442, Spri
EE 442: Solid State Devices
Fall 2015
Part 1: Course Introduction
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
About This Course
1.
2.
3.
Basic Semiconductor Materials
EE 442 Homework 4
Fall 2015
Distribute on 09/21/2015, Due in Class on Monday, 09/28/2015
1. (a) Show that the minimum conductivity of a semiconductor sample occurs when
n0 ni p n . [Hint: Begin with e
EE 442 Homework 3
Fall 2015
Distribute on 09/11/2015, Due in Class on Friday, 09/17/2015
1. Calculate the approximate donor binding energy for GaAs (r = 13.2, mn* = 0.067 m0).
2. A silicon sample is d
Problem 1
A thin film transistor or, TFT for short is a unique kind of field-effect transistor that is created by
laying down thin layers of semiconductors, dielectrics, and metallic contacts on top o
Evan McHale
EE 441 Lab Report 2: Diffusion, Gate Alignment/Etch, ALD for gate oxide
Introduction
This lab report encompasses Labs 4-6. Lab 4 consisted of diffusing in the n-type source and drain
regio
* Be able to identify core processes in a typical top-down semiconductor fabrication sequence.
- Convenient for manufacturing
- Work your way from the top and remove material that is not needed
- Surf