EE 442 Homework 1 -Solutions
Fall 2015
Distribute on 08/28/2015, Due in Class on Friday, 09/04/2015
1. A HeNe laser outputs 1 mW of power at 632 nm.
(a) Determine the energy per photon
(b) Determine the number of photons per second.
2. Calculate the de Br
EE 442 Homework 2
Fall 2015
Distribute on 09/04/2015, Due in Class on Friday, 09/11/2015
1. A semiconductor has a band structure about the minimum along [100] described by
E E0 Acosk x Bcos k y cos k x . What is the effective mass associated with the xmin
EE 442 Solid State Devices
Fall 2010
Assignment 9
Due: Friday, December 03, in class
Optical Devices: Solar Cells and LEDs
We learnt about absorption of optical energy in semiconductors and about the conversion of the
optical energy to electrical energy i
EE 442 Solid State Devices
Fall 2010
Assignment 7
Due: Monday, November 5, in class
Metal-Semiconductor Junction
We studied the metal-semiconductor junction in detail. We learnt how to do electrostatic analysis
of a M-S junction in thermal equilibrium. Ne
EE 442 Solid State Devices
Fall 2010
Assignment 8
Due: Friday, November 19, in class
MOS Capacitor
We studied the metal-oxide-semiconductor capacitor in detail. We learnt how to do electrostatic
analysis of a M0S capacitor in thermal equilibrium under dep
EE 442 Solid State Devices
Fall 2010
Assignment 3
Due: Friday, September 24, in class
Quantum and Statistical Mechanics
We learnt about the concept of effective density of states as well as Fermi Dirac distribution as
first step towards calculating the ca
EE 442 Solid State Devices
Fall 2010
Assignment 5
Due: Monday, October 11, in class
Hall Effect and Physics of Excess Carriers
We learnt the fundamentals of Hall Effect to calculate the doping type, free carrier concentration
and carrier drift mobility in
EE 442 Solid State Devices
Fall 2010
Assignment 6
Due: Friday, October 29, in class
P-N Junction
We studied the P-N junction in detail. We learnt how to do electrostatic analysis of a p-n junction
in thermal equilibrium. Next we studied the transport in P
EE 442 Solid State Devices
Fall 2010
Assignment 4
Due: Monday, October 04, in class
Donor and Acceptor Statistics and Carrier Transport
We learnt the concept of the density of states in multi-dimensional semiconductors and also the
Fermi-Dirac probability
EE 442 Solid State Devices
Fall 2010
Assignment 2
Due: Monday, September 13, in class
Quantum Mechanics
We solved the Schrodingers Wave Equation for a particle in a box, a particle tunneling through
a barrier and, finally, developed the Kronig-Penney mode
EE 442 Solid State Devices
Fall 2010
Assignment 1
Due: Friday, September 03, in class
Space Lattices
Quantum Mechanics
We examine the crystal structure of commonly used semiconductors and the concept of space
lattices in two and three dimensions. We also
State-of-the-Art Transistor
Moores Law Past 32nm
S. Datta
The Penn State University
Electrical Engineering, Materials Research Institute
University Park, PA, USA
Nov 12, 2010
1
Talk Outline
Lithography Limits
From Broers [1] IEDM Plenary Session 1980
Tran
EE 442: Solid State Devices
Fall 2015
Part 5: Charge Carriers in Semiconductors
Effective Mass; DOS; Fermi Level; Doping
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Typical band structures at 0 K
EE 442, Spring 2015
Page
EE 442: Solid State Devices
Fall 2015
Part 3: Introduction to Quantum Mechanics
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Q&As from last lecture
In confliction of office hour, email to arrange time
What does equivalen
EE 442: Solid State Devices
Fall 2015
Part 8: Solid State Optical Devices
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Recap
Induce carriers in CB and VB such that carrier concentrations
(n and p) > equilibrium concentrat
EE 442: Solid State Devices
Fall 2015
Part 6: Charge Transport in Semiconductors
Drift, Diffusion, Hall Effect
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Charge Transport
We now have enough knowledge about charge carrie
EE 442: Solid State Devices
Fall 2015
Part 7: Carrier Generation and Recombination
(Non-Equilibrium Process)
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Generation and Recombination
Generation:
Recombination:
Generatio
EE 442: Solid State Devices
Fall 2015
Part 4: Energy Bands
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Big Picture: Why are we studying this?
Its all based on I-V properties.
How do they work?
What structures do carriers
EE 442: Solid State Devices
Fall 2015
Part 2: Introduction to Semiconductor Materials
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
Semiconductor materials
EE 442, Spring 2015
Page 2
Periodic structure
Periodic Structure
e.
EE 442: Solid State Devices
Fall 2015
Part 1: Course Introduction
Instructor: Prof. Weihua Guan
Office: 111F EE West
EE 442, Spring 2015
Page 1
About This Course
1.
2.
3.
Basic Semiconductor Materials
Quantum Mechanics Basics
Charge carriers in Semiconduc
EE 442 Homework 4
Fall 2015
Distribute on 09/21/2015, Due in Class on Monday, 09/28/2015
1. (a) Show that the minimum conductivity of a semiconductor sample occurs when
n0 ni p n . [Hint: Begin with eq. (3-43) and apply eq. (3-24).]. (b) What is the
expre
EE 442 Homework 3
Fall 2015
Distribute on 09/11/2015, Due in Class on Friday, 09/17/2015
1. Calculate the approximate donor binding energy for GaAs (r = 13.2, mn* = 0.067 m0).
2. A silicon sample is doped with 1017 boron atoms/cm3. What is the electron co
Lab Report 4 | EE 441 | Chad Ostrowski
Construction
Lab 1:
We were given boron-doped (p-type) wafers (mine was A12) that were 2 inches across, 100 aligned, 0.0126in thick, and had 0.426
ohm-cm resistivity. We were told about the things we would do (wafer