MatSC503 Kinetics of Materials Processes
Homework #1 Due February 4, 2010
Problem 1
(a) Schematically draw the concentration profiles across the thickness of a plate at steady state
for the two cases: (i) the diffusion coefficient is a constant; (ii) the

Matsc 503 Kinetics of Materials Processes - Spring 2010
Problem Set #4 - Due March 4
Problem 1.
The attached concentration-distance curve is from a diffusion couple made up of a thick sample of
uranium and a two-phase uranium-nickel alloy with an average

Kinetics of Phase Transformations
(References: J. W. Christian, Theory of Transformations in Metals and Alloys;
Porter and Easterling, Phase Transformations in Metals and Alloys)
Change of state, e.g. s l , l v, l s
Phase Transformations
Change of structu

Ficks Second Law
For non-steady state diffusion, the concentration profile
evolves with time, c(r t) or c(x y z t)
time c(r,t), c(x,y,z,t)
If S is an arbitrary closed surface within a certain region
of the system, the change in the total amount of diffusi

Atomic Theory of Diffusion
(See Chapter 2 in Philibert)
The purpose: to relate the phenomenological diffusion
coefficient to microscopic parameters such as jump distance
and jump frequency
Consider a simple problem of diffusion along [001] direction of
a

Diffusion Along Extended Defects
(Chapter 6 in Shewmon)
(b) Precipitates
(a) Cavities
(c) Surfaces
(d) Grain Boundaries
Diffusion in a system with extended defects is determined by two
effects: (1) the jump frequency difference in the bulk and along
the e

MatSc503 Kinetics of Materials Processes
C ass time: ues a d u :30 3: 5
Class t e: Tues and Thur 2:30-3:45PM
Class Room: 104 Steidle
Instructor: Long-Qing Chen
102 Steidle Building, lqc3@psu.edu
Office hours: Wed. 2:00 3:00 PM
Wed 2:00-3:00
1
Course Gradi

Solid State Diffusion
The majority of materials processes in solids involve
diffusion, for example,
Doping of solutes in semiconductors
Sintering of ceramics and metals
Thin-film growth
Carburization and decarburization of steels
Solidification of alloys

MatSE 503 Kinetics of Materials Processes
Problem Set #7
Due: April 29, 2010
Problem 1
The amplitude of a compositional fluctuation, C-Co, where Co is the average initial composition,
may be expressed as
A( , t ) = A( ,0 ) exp[R ( )t ]
where A(,0) is the

Matsc 503 Kinetics of Materials Processes - Spring 2010
Problem Set #5- Due March 25
Problem 1. Consider a crystal at a temperature T with a coordination number of z and a nearest
neighbor distance . The Debye frequency for this crystal is . The vacancy f

MatSC503 Kinetics of Materials Processes
Homework #6 Due April 20, 2010
Problem 1. The temperature dependence of lattice and grain diffusion can be expressed
as
D L = DL 0 exp( Q L RT ) and gb D gb = gb 0 D gb 0 exp Q gb RT
respectively. Consider the foll

MatSC503 Kinetics of Materials Processes
Homework #1 Due January 28, 2010
Problem 1
a) Starting from the combined first and second law of thermodynamics including electric
work, show that the entropy change for a constant pressure process,
1
dS = dQ p

MatSC503 Kinetics of Materials Processes
Homework #3 Due February 25, 2007
Problem 1
Suppose you have just learned that make wires of the high-temperature ceramic
superconductor, YBa2Cu3O7-x. You wish to optimize its superconducting properties by
annealin