EE 340 Exam 1 (Chapter 1~4) _ Practice Problems:
1. What is the name of lattice type shown above?
a. Simple cubic
b. Body centered cubic
c. Face-centered cubic
d. Diamond
e. Zinc blend
2. How many atoms are in the lattice structure in Problem 1?
a. 1
b. 1
The figure shown here is a unit cell of the diamond
structure. Silicon, Germanium are two common
semiconductor materials that have the same crystal
structure shown here. Answer the next two questions
based on this figure.
1. Refering to Figure above —
EE 340: Introduction to Nanoeiectronics
Fall 2013
Mid Term Exam: 3
December 3, 2013
STUDENT NAME:
The exam is for 1 hour and 15 minutes. .
Answer All Questions. Each multiple choice question carries 5 points and questions 9 and 10 are
10 points each.
Al
EE 340: Introduction to Nanoelectronics
Fall 2013
Mid Term Exam: 2
October 31, 2013
STUDENT NAME: / n 5 war Q
The exam is for 1 hour and 15 minutes.
Answer All Questions. Each question carries 5 points.
All answers need to be filled in the bubble sheet. P
Homework #4 Solutions
1. (4.2 in the book)
Intrinsic carrier concentration ni
ni 2 = Nc Nv exp(
3
Where
Eg
kT
)
3
N c (T ) 2 , NV (T ) 2 , N c NV (T )3 , k=8.6210-5eV/K
For Si, at T=300K, Eg=1.12eV, Nc=2.81019cm-3, Nv=1.041019cm-3, intrinsic carrier conce
Questions 1-3 refer to the GaAs crystal structure below:
1. Given the lattice constant a Z 5.65 A, determine the distance between neighboring Ga and As
atoms: é
A. 2.83A 7W},
B. 1.89A @144 . (T?) t/E‘H tﬁ’)
C. 5.65A fr
3 o
(g 3233? Tran 3 9943/1
2. Det
Homework #1 Solutions
1. nanotube aspect ratio: 1 cm / 5 nm = 2x106.
equivalent distance through Holland tunnel: 20 m x 2x106 = 40,000 km, or approximately
one trip around the earth
2 (1.3 in the book)
o
(a) a = 5.43 A ; From Problem 1.2d,
a=
o
a 3 (5.43)
EE340 - Spring 2015
Problem Set #11
Reading Assignment: Read Neamen chapter 12. Carefully reading the examples and working the exercises you
encounter as you read will aid your learning.
Problems:
1. Neamen 12.3.
2. Neamen 12.9.
3. Neamen 12.10.
4. Neamen
EE340 - Spring 2015
Problem Set #8
Reading Assignment: Read Neamen chapter 8. Carefully reading the examples and working the
exercises you encounter as you read will aid your learning.
Problems:
1. Neamen 8.2.
2. Neamen 8.4.
3. Neamen 8.9.
4. Neamen 8.11.
EE340 - Spring 2015
Problem Set #4
Reading Assignment: Read Neamen chapter 4. Carefully reading the examples and working the
exercises you encounter as you read will aid your learning.
Problems:
1. Neamen 4.2.
2. Neamen 4.10.
3. Neamen 4.12. I suggest DPl
Data from one student and uploaded here as an example.
Fitted linear lines should follow log10(y)=a*x+b expression.
a is the slope.
n=1.03 for 1N34a
n=3.98 for indium
n= 3.63 for indium-silver
Actually the ideality factor n of indium silver should be larg
EE340 - Spring 2015
Problem Set #1
Reading Assignment: Read Neamen chapter 1. Also watch the videos Intel-Mark
Bohr-22nm-explained and Intel-Mark Bohr-14nm-explained, and take a look at at
least the first 12 pages of mark-bohr-2014-idf-presentation (avail
Homework #3.5 Solutions
1. (3.25 in the book)
For a one-dimensional infinite potential well,
2mn E
n 2 2
= k2
2
a
Distance between quantum states
k n +1 k n = (n + 1) = (n ) =
a
a a
Now
2 dk
g T (k )dk =
a
Now
1
k = 2m n E
2
=
1 1 2m n
dE
2
Homework #5 Solutions
1. (5.2 in the book)
= e p N a
1.80
=
e p (1.6 10 19 )(380)
or N a =
= 2.96 1016 cm 3
2 (5.8 in the book)
L
L
(a) R =
=
A e p N a A
(
)
For N a = 21016 cm
3
, then
p 400 cm 2 /V-s
R=
(
19
1.6 10
= 68.93
(0.075)
)(400)(2 1016 )(8.5
Homework #2 Solutions
1.
ei ( kxt ) cos(kx t ) i sin(kx t )
(a) Re
cos(kx t )
(b) Im
sin(kx t )
(c)
Re Re *
Im Im *
(d)
2
* 1
(e) right
(f)Because this wave function cannot satisfy
2
dx 1
2 (2.5 in the book)
hc
hc
E h
E
Gold: E 4.90 eV 4.90 1.6 10
Sect #002
12/4/15
Lab Report 4
1.) Plot the data curves for ID vs. VD. Excel was unable to accurately display all of the data, and
below is my best attempt at keeping it clean while showing the data. I removed VGS = 2.25V in
an attempt to show VGS = 1.5V
Sect #5
12/10/15
Lab Report 5
Introduction:
In this lab, we studied relationship between the Drain Current and the Gate Voltage of an nchannel MOSFET. We are looking to find the physical meaning of the saturation region in the
MOSFET and the linear region
Sect #005
11/19/15
Lab 3 Report
Introduction:
In this lab, we learned about the relationship between Capacitance and Voltage in a MOS
capacitor. We also will look into how Frequency effects the capacitance in the MOS capacitors.
This information will help
MOSFETs again
[Reading: Neamen chapter 10, chapter 11]
EE340
- Giebink (FA15) Price, Xie, and Lu
EE
340 Recitation
Problem 1 Transconductance
above.
EE340
- Giebink (FA15) Price, Xie, and Lu
EE
340 Recitation
Problem 2 Subthreshold conduction
Assume that
Crystal Structure
EE340 - Giebink
Order in Solids
Amorphous
EE340 - Giebink
Polycrystalline
Single crystal
Image of silicon crystal obtained by
transmission-electron microscopy.
Lattices
Lattices are mathematical abstractions that describe
periodic arran
Solid-state Physics
[Reading: Neamen chapter 3]
EE340 - Giebink
Two atoms
H2 molecule:
EE340 - Giebink
Many atoms: Band formation
N atoms, each with 1 electron:
original discrete energy levels each split
into N closely spaced sublevels
EE340 - Giebink
Si
Quantum Mechanics Primer
[Reading: Neamen chapter 2]
(Lec1 pgs 25-36, Lec2 36-48)
I think I can safely say that nobody understands quantum mechanics
-Richard Feynman (1965)
EE340 - Giebink
Units
electron volt (eV): energy gained by an electron that is
ac
Homework #4 Solutions
1. (3.25 in the book)
For a one-dimensional infinite potential well,
2mn E
n 2 2
= k2
2
a
Distance between quantum states
k n +1 k n = (n + 1) = (n ) =
a
a a
Now
2 dk
g T (k )dk =
a
Now
1
k = 2m n E
2
=
1 1 2m n
dE
2
E