% Problem 1
% Part A
f=@(x)x./(x.^2+10);
x=linspace(0,10,101);
y=f(x);
[y0,i0]=max(y);
x0=x(i0);
% Part B
[x0,ymax]=fminbnd(@(x)-f(x),0,10);
y0=-ymax;%Accounts for negation of f in call to fminbnd
max_x = x0;
max_y = y0;
max_x,max_y
% Part C
plot(x,y,'b-'
Rutgers University
School of Engineering
Fall 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
Review Examples for Weeks 5-8
Weekly Topics
Week 1 - Basics variables, arrays, matrices,
Rutgers University
School of Engineering
Fall 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
week 11
Weekly Topics
Week 1 - Basics variables, arrays, matrices, plotting (ch. 2 & 3)
Rutgers University
School of Engineering
Fall 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
Review Examples for Weeks 5-8
Weekly Topics
Week 1 - Basics variables, arrays, matrices,
% Solutions ot additional recitation problems
% S. J. Orfanidis - Fall 2012
clear all
% Problem 1 - Fibonacci
% -
f(1) = 1; f(2) = 1;
for n=3:10,
f(n) = f(n-1) + f(n-2);
end
s = sqrt(5);
n = 1:10;
g = (s+1)/2/s * (1+s)/2).^(n-1) + (s-1)/2/s * (1-s)/2).^
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 2
Electrons and Holes in Semiconductors
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconducto
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 5
PN Junction
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for Integrated C
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 7
MOS Capacitor
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for Integrated
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 4
Generation and Recombination
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 8
MOS Transistor
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for Integrate
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 3
Transport in Semiconductors
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 6
Optoelectronic Devices
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for I
EE 471: Transport Phenomena in Solid State Devices
HW6
Due: 11/4/16
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. figs.
1. An ideal NMOS tr
Rutgers University
School of Engineering
Spring 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
week 5
Weekly Topics
Week 1 - Basics variables, arrays, matrices, plotting (ch. 2 & 3)
Rutgers University
School of Engineering
Spring 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
week 6
Weekly Topics
Week 1 - Basics variables, arrays, matrices, plotting (ch. 2 & 3)
Rutgers University
School of Engineering
Spring 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
week 7
Weekly Topics
Week 1 - Basics variables, arrays, matrices, plotting (ch. 2 & 3)
Rutgers University
School of Engineering
Spring 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
week 8
Weekly Topics
Week 1 - Basics variables, arrays, matrices, plotting (ch. 2 & 3)
Rutgers University
School of Engineering
Spring 2012
14:440:127 - Introduction to Computers for Engineers
Sophocles J. Orfanidis
ECE Department
orfanidi@ece.rutgers.edu
week 8
Weekly Topics
Week 1 - Basics variables, arrays, matrices, plotting (ch. 2 & 3)
EE 471: Transport Phenomena in Solid State Devices
HW 4
Due: 3/4/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. gs.
1. A vertical silicon
ER 471: Transport Phenomena in Solid State Devices
HW6
Due: 4/11/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 Sig. gs.
1. An ideal NMOS tran
EE 471: TranSport Phenomena in Solid State Devices
I-IW 3
Due: 2/25/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 Sig. gs.
i. Consider a sili
EE 471: Transport Phenomena in Solid State Devices
HW 2
Due: 2/12/13
Please Show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 Sig. gs.
1. A silicon sample
BB 471: Transport Phenomena in Solid State Devices
HWS
Due: 4/1/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. gs.
1. A silicon MOS capac