1
College Composition II
Professor Kratz
Writing Assignment 3: Paragraphing
Assignment three asks you to incorporate secondary sources into your own original,
thesis-driven paper. In this project, Langston Hughes poetry is your primary source (the
direct
Rutgers University
School of Engineering
Dept. of Mechanical & Aerospace Engineering
650:443
Vibrations
Nov. 1, 2016
Homework #7b Solutions
3.28)
From Prob. 3.6: = 2k / =
m and f ( t )
(M
0
/ kR 2 ) sin t
By inspection, f 0 = 0, p = 2 p /
=
f p( )
c
f p(
Rutgers University
School of Engineering
Dept. of Mechanical & Aerospace Engineering
650:443
Vibrations
Oct. 25, 2016
Homework #7a Solutions
3.16)
M=
p
I p :
mgrG sin k ( s x ) =
R I p
I p + mgrG sin + kR 2 =
kRx(t ) where sin 1
I p + ( mgrG + kR 2 ) =
JCORP Invoice Log
Fy 2005-06
Description
2010-01-July
2010-02-August
2010-02-martinez
e1bbe86b928af9084178f41d3bfb11f0508fa75a.xls
Page 1 of 1
en
Date Check Date Turned
Issued
over to Clerk
m
Amt
Date rec'd in
Date Verified Approved by Date Turned Date Se
EE 471: Transport Phenomena in Solid State Devices
HW 4
Due: 3/4/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. gs.
1. A vertical silicon
ER 471: Transport Phenomena in Solid State Devices
HW6
Due: 4/11/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 Sig. gs.
1. An ideal NMOS tran
EE 471: TranSport Phenomena in Solid State Devices
I-IW 3
Due: 2/25/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 Sig. gs.
i. Consider a sili
EE 471: Transport Phenomena in Solid State Devices
HW 2
Due: 2/12/13
Please Show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 Sig. gs.
1. A silicon sample
BB 471: Transport Phenomena in Solid State Devices
HWS
Due: 4/1/14
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. gs.
1. A silicon MOS capac
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 2
Electrons and Holes in Semiconductors
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconducto
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 5
PN Junction
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for Integrated C
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 7
MOS Capacitor
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for Integrated
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 4
Generation and Recombination
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 8
MOS Transistor
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for Integrate
EE 471: Transport Phenomena in Solid State Devices
HW5
Due: 10/28/16
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. figs.
1. A silicon MOS c
EE 471: Transport Phenomena in Solid State Devices
HW 1
Due: 9/13/16
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. figs.
1. A silicon sampl
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 3
Transport in Semiconductors
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices
EE 471: Transport Phenomena in Solid State Devices
Fall 2016
Lecture 6
Optoelectronic Devices
Bryan Ackland
Department of Electrical and Computer Engineering
Stevens Institute of Technology
Hoboken, NJ 07030
Adapted from Modern Semiconductor Devices for I
EE 471: Transport Phenomena in Solid State Devices
HW6
Due: 11/4/16
Please show all working (including equations you use to calculate your answers).
All numerical answers should include units
Calculate numerical answers to 3 sig. figs.
1. An ideal NMOS tr
Uiz#1
1. A set of springs havmg the same spring constant k are connected as
lent spring constant km?
'-ji. Quiz #1
El Determine the magnitude of the forces acting on the spheres and the co
_.ii.o supports shown by the little triangles. Ass
ume the welg ht
Quiz #5
A conical compression coil spring, as illustrated below, is made of 3-mmdiameter steel wire (G=79 GPa) and has an active coil diameter that varies from
20 mm at the top to 45 mm at the bottom. The pitch (axial spacing between
corresponding points
Quiz #4
A screw jack with a 2-in. double-thread Acme screw is used to raise a load of 3,000 lb.
A plain thrust collar of 3.0 in. mean diameter is used. Coefficients of running friction are
estimated as 0.12 and 0.09 for f and fc, respectively. Determine
Quiz #3
A bar having a diameter of 1 inch, a hardness of 400 Bhn, and a hot-rolled surface is
under reversed torsional loading at temperature of 1000F. Estimate the endurance
limit at the reliability level of 95%.
1 /110
Quiz #1
1.
A set of springs having the same spring constant k are connected as
ed below. What is the equivalent spring constant, keq?
illustrat
2.
Determine the magnitude of the forces acting on the spheres and the container.
The container has two support
MLA 1
Modern Language Association (MLA) Format and Documentation
This handout covers the basics of MLA format and the documentation of sources students frequently use.
For more complete information, refer to the MLA Handbook for Writers of Research Papers