EE105 Homework 13 Solution
Problem 1:
Find out the minimum cost to buy the parts for your 3T opamp, in quantities of a few thousand.
2n3904
: $0.03137 in quantities of 2,000
2n3906
: $0.0324 in quantities of 2,000
10k resistor
: $0.00131 in quantities of
EE105 Homework 12 Solution
Problem 1:
Calculate the low-frequency input capacitance for a CMOS inverter made with the ALD1106 and
ALD1107. Assume that Cgs=300fF and Cgd=100fF for both N and P transistors.
Problem 2:
Assuming that the amplifier is driving
EE105 Homework 11 Solution
Problem 1:
You have an amplifier with a gain of 10,000 and a single pole at 105rad/s. You put it into feedback
with a feedback factor of exactly f=0.01. You may assume that the feedback does not affect the open-loop gain of the
EE105 Homework 10 Solution
11.4(c) Construct the Bode plot |Vout/Vin| for the stages depicted in Fig. 11.62.
11.16. Apply Miller's theorem to resistor RF in Fig. 11.68 and estimate the voltage gain of the circuit. Assume
VA= and RF is large enough to allo
EE105 Homework 8 Solution
Problem 1: Now to try to reduce the effect of PVT variation, add an emiiter resistor yo your circuit from Problem 3 of
last week's HW (as in Figure 5.56). Let RE=200k. Repeat the same basic stpes above:
A) Figure out the bias poi
EE105 Homework 7 Solution
Problem 1: Figure 16.15 shows a CS amplifier with resistive gate bias and capacitive input coupling. You want to be
able to amplify audio signals between 20Hz and 20kHz. The microphone has a source impedance of 100k. Assuming
nCo
EE105 Homework 6 Solution
Problem 1: The thresholds that you calculated for the NMOS device in the Microlab CMOS process in the last
homework do not match the measured values. The missing piece is the threshold adjust implant of boron at a dose of
3e12 io
EE105 Homework 5 Solution
Problem 1: Check out the MOS capacitor lecture notes from Prof. Wu:
http:/www-inst.eecs.berkeley.edu/~ee105/sp07/lectures/SP07-Lecture4-MOSCapacitor.pdf
On slide 6, it says that the potential varies linearly in the oxide, and qua
Question 10
a) The vast majority of electrons in silicon are bound to their respective atoms. Only a very
tiny fraction are able to move in the conduction band, and only a tiny fraction of
energies are empty in the valence band allowing electrons with tho