SELF-EVALUATION FORM
Your name: Jolie Huang
Title of the project: On-Campus Parking
Date: 3/16/14
Instructions
On this form, record and evaluate your own involvement in this project. In
the Log section, record the activities you performed as an individual
2.2.3 Lifetime and Diffusion Length
Concept of Life Time
So far we looked at (perfect) semiconductors in perfect equilibrium. The concentration of holes and electrons was given by the
type of the semiconductor (as signified by the band gap), the doping an
ECE 3050 Analog Electronics MOSFET and JFET Formula Summary Equations are for the n-channel MOSFET. For the p-channel device, reverse the directions of all current labels and reverse the order of subscripts involving node labels, i.e. VDS becomes VSD . If
2.2.4 Simple Junctions and Devices
Introductory Remarks
In this subchapter we will look at some junctions in a cursory manner with the goal to get a basic understanding for current flow
and the driving forces behind it.
We will see that it is possible (wi
Tutorial Sheet #10
EPL 337
1.
(a) Write the possible oxidation and reduction half-reactions that occur when magnesium is
immersed in each of the following: (i) HCl, (ii) an HCl solution containing dissolved oxygen, (iii)
an HCl solution containing dissolv
Whites, EE 320
Lecture 36
Page 1 of 10
Lecture 36: MOSFET Common Drain
(Source Follower) Amplifier.
The third, and last, discrete-form MOSFET amplifier well
consider in this course is the common drain amplifier. This type
of amplifier has the input signal
ECE3050 Assignment 15
1. The gure shows a JFET current source used as the tail supply for a di amp. It is given that
V = 15 V, = 0.004 A/ V2 , and VT O = 3 V. Use the equations ID = (VGS VT O )2
and VGS = ID RS to solve for the drain current ID .
2. The g
Tutorial Sheet #9
EPL 337
1.
How do you define the stress component, , where ,=x,y,z. By sketching a cube shaped
material w.r.t. right handed coordinate system, how do you represent the stress component such
as yy and yz.
2.
The fraction increase in volum
Whites, EE 320
Lecture 34
Page 1 of 9
Lecture 34: MOSFET Common Gate
Amplifier.
Well continue our discussion of discrete MOSFET amplifiers
we began with the common source amplifier in Lectures 31 and
32.
Here well cover the common gate amplifier, which is
Whites, EE 320
Lecture 35
Page 1 of 12
Lecture 35: CMOS Common Gate Amplifier.
The IC version of the common gate amplifier with an active load
is shown below implemented in CMOS:
The common gate amplifier functions similar to a BJT common
base amplifier a
ECE 3050 Analog Electronics - BJT Formula Summary Equations are for the npn BJT. For the pnp device, reverse the directions of all current labels and reverse the order of subscripts involving node labels, i.e. VCE becomes VEC . When more than one equation
Whites, EE 320
Lecture 32
Page 1 of 9
Lecture 32: Common Source Amplifier with
Source Degeneration.
The small-signal amplification performance of the CS amplifier
discussed in the previous lecture can be improved by including a
series resistance in the so
Whites, EE 320
Lecture 31
Page 1 of 5
Lecture 31: Common Source Amplifier.
Weve studied MOSFET small-signal equivalent models and the
biasing of MOSFET amplifiers in the previous three lectures.
Well now apply those skills by looking closely at three basi
Lecture18
OUTLINE
BasicMOSFETamplifier
MOSFETbiasing
MOSFETcurrentsources
Commonsourceamplifier
Reading:Chap.7.17.2
EE105Spring2008
Lecture18,Slide1
Prof.Wu,UCBerkeley
CommonSourceStage
=0
Av = g m RD
W
Av = 2nCox I D RD
L
EE105Spring2008
Lecture18,Slid
DC Voltage and Current Sources
*
Output characteristics of a BJT or MOSFET look like a family of current sources . how do we pick one? specify the gate-source voltage VGS in order to select the desired current level for a MOSFET ( specifiy VBE exactly for